{"id":"https://openalex.org/W4378965885","doi":"https://doi.org/10.1109/tie.2023.3279551","title":"Novel Temperature Calibration Method of E-Mode and D-Mode GaN Power Modules Considering Dynamic ON-Resistance","display_name":"Novel Temperature Calibration Method of E-Mode and D-Mode GaN Power Modules Considering Dynamic ON-Resistance","publication_year":2023,"publication_date":"2023-05-30","ids":{"openalex":"https://openalex.org/W4378965885","doi":"https://doi.org/10.1109/tie.2023.3279551"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2023.3279551","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/tie.2023.3279551","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5088035080","display_name":"Jangmuk Lim","orcid":"https://orcid.org/0000-0003-4701-4277"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jangmuk Lim","raw_affiliation_strings":["Department of Automotive Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-4701-4277","affiliations":[{"raw_affiliation_string":"Department of Automotive Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101208118","display_name":"Dong Keun Jang","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Dong Keun Jang","raw_affiliation_strings":["Semi-Powerex, Incheon, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semi-Powerex, Incheon, South Korea","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102957011","display_name":"Sang Won Yoon","orcid":"https://orcid.org/0000-0002-0201-8031"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang Won Yoon","raw_affiliation_strings":["Department of Automotive Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-0201-8031","affiliations":[{"raw_affiliation_string":"Department of Automotive Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.5356,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.61477186,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"71","issue":"5","first_page":"5245","last_page":"5252"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13928","display_name":"Advanced Sensor Technologies Research","score":0.9965000152587891,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/calibration","display_name":"Calibration","score":0.6635748147964478},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6155327558517456},{"id":"https://openalex.org/keywords/temperature-measurement","display_name":"Temperature measurement","score":0.5991184711456299},{"id":"https://openalex.org/keywords/mode","display_name":"Mode (computer interface)","score":0.5826855897903442},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5545806884765625},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5483719110488892},{"id":"https://openalex.org/keywords/steady-state","display_name":"Steady state (chemistry)","score":0.5000030994415283},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.482995867729187},{"id":"https://openalex.org/keywords/work","display_name":"Work (physics)","score":0.4312763214111328},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4310629963874817},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.42524972558021545},{"id":"https://openalex.org/keywords/electron-temperature","display_name":"Electron temperature","score":0.4227054715156555},{"id":"https://openalex.org/keywords/control-theory","display_name":"Control theory (sociology)","score":0.41869670152664185},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.41519105434417725},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3859357237815857},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.36973413825035095},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.36663490533828735},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2504096031188965},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.24906787276268005},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.24251049757003784},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2263432741165161},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.1617875099182129},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1438000202178955},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.13066905736923218}],"concepts":[{"id":"https://openalex.org/C165838908","wikidata":"https://www.wikidata.org/wiki/Q736777","display_name":"Calibration","level":2,"score":0.6635748147964478},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6155327558517456},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.5991184711456299},{"id":"https://openalex.org/C48677424","wikidata":"https://www.wikidata.org/wiki/Q6888088","display_name":"Mode (computer interface)","level":2,"score":0.5826855897903442},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5545806884765625},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5483719110488892},{"id":"https://openalex.org/C8171440","wikidata":"https://www.wikidata.org/wiki/Q903414","display_name":"Steady state (chemistry)","level":2,"score":0.5000030994415283},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.482995867729187},{"id":"https://openalex.org/C18762648","wikidata":"https://www.wikidata.org/wiki/Q42213","display_name":"Work (physics)","level":2,"score":0.4312763214111328},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4310629963874817},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.42524972558021545},{"id":"https://openalex.org/C22175881","wikidata":"https://www.wikidata.org/wiki/Q7201785","display_name":"Electron temperature","level":3,"score":0.4227054715156555},{"id":"https://openalex.org/C47446073","wikidata":"https://www.wikidata.org/wiki/Q5165890","display_name":"Control theory (sociology)","level":3,"score":0.41869670152664185},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.41519105434417725},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3859357237815857},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.36973413825035095},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.36663490533828735},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2504096031188965},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.24906787276268005},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.24251049757003784},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2263432741165161},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.1617875099182129},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1438000202178955},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.13066905736923218},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C2775924081","wikidata":"https://www.wikidata.org/wiki/Q55608371","display_name":"Control (management)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tie.2023.3279551","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/tie.2023.3279551","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8100000023841858}],"awards":[{"id":"https://openalex.org/G1299059172","display_name":null,"funder_award_id":"RS-2023-00207865","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G4519814977","display_name":null,"funder_award_id":"20003558","funder_id":"https://openalex.org/F4320334879","funder_display_name":"Korea Evaluation Institute of Industrial Technology"}],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320334879","display_name":"Korea Evaluation Institute of Industrial Technology","ror":"https://ror.org/03z9cwa38"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W2024752911","https://openalex.org/W2026012753","https://openalex.org/W2058923565","https://openalex.org/W2063176925","https://openalex.org/W2069324527","https://openalex.org/W2072245924","https://openalex.org/W2109894155","https://openalex.org/W2125859330","https://openalex.org/W2135351786","https://openalex.org/W2136177314","https://openalex.org/W2138236273","https://openalex.org/W2158437612","https://openalex.org/W2899993476","https://openalex.org/W2902860220","https://openalex.org/W2990154169","https://openalex.org/W3015726929","https://openalex.org/W3179829488","https://openalex.org/W3200851171","https://openalex.org/W4205823980","https://openalex.org/W4225881025"],"related_works":["https://openalex.org/W2000487630","https://openalex.org/W2654716541","https://openalex.org/W1988167421","https://openalex.org/W2109359929","https://openalex.org/W2037936622","https://openalex.org/W4297582192","https://openalex.org/W4385624134","https://openalex.org/W2114901214","https://openalex.org/W4289782876","https://openalex.org/W2003184216"],"abstract_inverted_index":{"In":[0,66],"this":[1,67,87],"article,":[2],"we":[3],"present":[4],"a":[5,16],"method":[6],"for":[7,131,168],"measuring":[8],"temperature":[9,120,169,180],"using":[10,102,123,159],"the":[11,39,58,90,96,139,147,173],"temperature-sensitive":[12],"parameter":[13],"(TSP)":[14],"of":[15,38,95,100,154,162,184],"GaN":[17,24,53,72],"power":[18,73],"module.":[19],"Current":[20],"collapse":[21],"occurs":[22],"in":[23,32,57,93,112],"high":[25],"electron":[26],"mobility":[27],"transistors":[28],"(HEMTs).":[29],"This":[30],"results":[31],"dynamic":[33,43,116,133,140],"<sc":[34,141],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[35,142],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">on</small>-resistance":[36,143],"because":[37],"trapped":[40],"electrons.":[41],"Thus,":[42],"conditions":[44],"should":[45],"be":[46],"considered":[47],"to":[48,77,146],"accurately":[49],"measure":[50],"thermal":[51,80],"characteristics.":[52,81],"HEMTs":[54],"are":[55,75,157],"operated":[56],"enhanced":[59],"mode":[60,64],"(E-mode)":[61],"and":[62,70,115,152],"depletion":[63],"(D-mode).":[65],"study,":[68],"E-mode":[69],"D-mode":[71],"modules":[74],"designed":[76],"compare":[78],"their":[79],"Among":[82],"three":[83],"common":[84],"temperature-measurement":[85],"methods,":[86],"work":[88],"employs":[89],"TSP-based":[91],"approach":[92],"consideration":[94],"device":[97],"operation,":[98],"instead":[99],"those":[101],"thermosensitive":[103],"optical":[104],"or":[105],"material":[106],"properties.":[107],"The":[108,118,176],"calibration":[109,125],"is":[110,121,129,136,170],"conducted":[111,158],"steady":[113],"state":[114],"state.":[117],"ambient":[119],"estimated":[122],"steady-state":[124],"data.":[126],"Power":[127],"cycling":[128],"examined":[130],"considering":[132],"conditions.":[134],"It":[135],"confirmed":[137],"that":[138],"changes":[144],"according":[145],"cycle":[148],"period,":[149],"on":[150],"time,":[151],"number":[153],"cycles.":[155],"Experiments":[156],"different":[160],"values":[161],"these":[163],"parameters.":[164],"Finally,":[165],"an":[166,182],"equation":[167,177],"obtained":[171],"from":[172],"experimental":[174],"results.":[175],"precisely":[178],"estimates":[179],"with":[181],"error":[183],"0.7%.":[185]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2024,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}