{"id":"https://openalex.org/W4312917665","doi":"https://doi.org/10.1109/tie.2022.3210581","title":"An Online Condition Monitoring Method for IGBT Gate Oxide Degradation Based on the Gate Current in Miller Plateau","display_name":"An Online Condition Monitoring Method for IGBT Gate Oxide Degradation Based on the Gate Current in Miller Plateau","publication_year":2022,"publication_date":"2022-10-05","ids":{"openalex":"https://openalex.org/W4312917665","doi":"https://doi.org/10.1109/tie.2022.3210581"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2022.3210581","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2022.3210581","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083826103","display_name":"Allahyar Moazami","orcid":"https://orcid.org/0000-0001-6198-542X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Allahyar Moazami","raw_affiliation_strings":["Vira Control Systems Company, Tehran, Iran"],"raw_orcid":"https://orcid.org/0000-0001-6198-542X","affiliations":[{"raw_affiliation_string":"Vira Control Systems Company, Tehran, Iran","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069988360","display_name":"Sadegh Mohsenzade","orcid":"https://orcid.org/0000-0003-0206-8570"},"institutions":[{"id":"https://openalex.org/I80543232","display_name":"K.N.Toosi University of Technology","ror":"https://ror.org/0433abe34","country_code":"IR","type":"education","lineage":["https://openalex.org/I80543232"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Sadegh Mohsenzade","raw_affiliation_strings":["Electrical Engineering Department, K. N. Toosi University of Technology, Tehran, Iran"],"raw_orcid":"https://orcid.org/0000-0003-0206-8570","affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, K. N. Toosi University of Technology, Tehran, Iran","institution_ids":["https://openalex.org/I80543232"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5054774396","display_name":"Khatereh Akbari","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Khatereh Akbari","raw_affiliation_strings":["Vira Control Systems Company, Tehran, Iran"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Vira Control Systems Company, Tehran, Iran","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.7543,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.84622874,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":99},"biblio":{"volume":"70","issue":"9","first_page":"9505","last_page":"9514"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.8151563405990601},{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.6620892882347107},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.5553476214408875},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4467669427394867},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.4418536424636841},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4412539601325989},{"id":"https://openalex.org/keywords/and-gate","display_name":"AND gate","score":0.4365652799606323},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.4347837567329407},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4046296775341034},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.40187394618988037},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.3994631767272949},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.38417524099349976},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.28135204315185547},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10901299118995667}],"concepts":[{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.8151563405990601},{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.6620892882347107},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.5553476214408875},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4467669427394867},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.4418536424636841},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4412539601325989},{"id":"https://openalex.org/C10418432","wikidata":"https://www.wikidata.org/wiki/Q560370","display_name":"AND gate","level":3,"score":0.4365652799606323},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4347837567329407},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4046296775341034},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.40187394618988037},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.3994631767272949},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.38417524099349976},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.28135204315185547},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10901299118995667},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tie.2022.3210581","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2022.3210581","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":38,"referenced_works":["https://openalex.org/W1943907064","https://openalex.org/W1969760775","https://openalex.org/W1979238143","https://openalex.org/W1981115875","https://openalex.org/W2071760299","https://openalex.org/W2099883498","https://openalex.org/W2121387826","https://openalex.org/W2137651196","https://openalex.org/W2142790790","https://openalex.org/W2148071019","https://openalex.org/W2152473368","https://openalex.org/W2162827174","https://openalex.org/W2166086202","https://openalex.org/W2240974893","https://openalex.org/W2243758511","https://openalex.org/W2321644402","https://openalex.org/W2515108015","https://openalex.org/W2515348268","https://openalex.org/W2786901160","https://openalex.org/W2794508159","https://openalex.org/W2809078044","https://openalex.org/W2906276923","https://openalex.org/W2907149085","https://openalex.org/W2951537305","https://openalex.org/W2954763539","https://openalex.org/W2967590331","https://openalex.org/W2978057745","https://openalex.org/W3014383814","https://openalex.org/W3016481159","https://openalex.org/W3023123314","https://openalex.org/W3041085883","https://openalex.org/W3044843165","https://openalex.org/W3045969701","https://openalex.org/W3080711207","https://openalex.org/W3132606362","https://openalex.org/W3135205722","https://openalex.org/W3216783637","https://openalex.org/W4200364996"],"related_works":["https://openalex.org/W2564193318","https://openalex.org/W2347268629","https://openalex.org/W1900689440","https://openalex.org/W3165795363","https://openalex.org/W2348060780","https://openalex.org/W3088879894","https://openalex.org/W2378831118","https://openalex.org/W2382314166","https://openalex.org/W2062551440","https://openalex.org/W2136657530"],"abstract_inverted_index":{"The":[0,67,98,113,151,162,182],"reliability":[1],"of":[2,7,16,31,34,129,148,153,191,201],"power":[3,17],"converters":[4],"is":[5,70,84,116,157],"one":[6],"the":[8,13,29,32,35,48,73,77,88,91,130,139,144,149,154,186,192,197,202],"important":[9],"issues":[10],"due":[11],"to":[12,53,142],"widespread":[14],"applications":[15],"electronics":[18],"in":[19,47,87],"many":[20],"industrial":[21],"fields.":[22],"Accordingly,":[23],"condition":[24],"monitoring":[25],"(CM)":[26],"methods":[27],"for":[28,43,58,125,195],"assessment":[30,128],"health":[33,127],"converter":[36],"components":[37],"are":[38,165],"considered":[39],"a":[40,55,110,166,173],"practical":[41],"topic":[42],"researchers":[44],"and":[45,106,118,120,172,175,188],"experts":[46],"field.":[49],"This":[50],"article":[51],"aims":[52],"propose":[54],"CM":[56,69,100,194],"method":[57,101,115,156],"insulated":[59],"gate":[60,64,92,145,178,198],"bipolar":[61],"transistor":[62],"(IGBT)":[63],"oxide":[65,146,199],"degradation.":[66],"proposed":[68,99,114,155,193],"based":[71],"on":[72],"gate\u2013emitter":[74],"current":[75,93],"during":[76],"turning-":[78],"<sc":[79],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[80],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">on</small>":[81],"process.":[82],"It":[83,134],"shown":[85],"that":[86],"degradation":[89,111,147,200],"process,":[90],"peak":[94,104],"value":[95,105],"majorly":[96],"increases.":[97],"captures":[102],"this":[103],"uses":[107],"it":[108],"as":[109],"indicator.":[112],"simple":[117],"analogous":[119],"can":[121,135],"be":[122,136],"used":[123],"easily":[124],"online":[126],"IGBTs":[131],"under":[132],"operation.":[133],"integrated":[137],"into":[138],"driver":[140],"module":[141],"assess":[143],"device.":[150,203],"functionality":[152],"evaluated":[158],"using":[159],"experimental":[160],"prototyping.":[161],"target":[163],"devices":[164],"1200-V,":[167],"40-A":[168],"trench-gate":[169],"field-stop":[170],"IGBT":[171],"600-V":[174],"60-A":[176],"planner":[177],"punch-through":[179],"discrete":[180],"IGBT.":[181],"achieved":[183],"results":[184],"show":[185],"validity":[187],"acceptable":[189],"performance":[190],"detecting":[196]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":12},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":3}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}