{"id":"https://openalex.org/W3217602007","doi":"https://doi.org/10.1109/tie.2021.3128907","title":"Active Gate Driving Technique for Series Connecting SiC MOSFETs in the Presence of Gate Pulse Delay Mismatch","display_name":"Active Gate Driving Technique for Series Connecting SiC MOSFETs in the Presence of Gate Pulse Delay Mismatch","publication_year":2021,"publication_date":"2021-11-23","ids":{"openalex":"https://openalex.org/W3217602007","doi":"https://doi.org/10.1109/tie.2021.3128907","mag":"3217602007"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2021.3128907","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2021.3128907","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5025889583","display_name":"Vamshi Krishna Miryala","orcid":"https://orcid.org/0000-0002-4381-4181"},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Vamshi Krishna Miryala","raw_affiliation_strings":["Power Electronics &amp; Drives Group, Department of Electrical Engineering, Indian Institute of Technology, Madras, Chennai, India"],"raw_orcid":"https://orcid.org/0000-0002-4381-4181","affiliations":[{"raw_affiliation_string":"Power Electronics &amp; Drives Group, Department of Electrical Engineering, Indian Institute of Technology, Madras, Chennai, India","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055830193","display_name":"S. Dhanasekaran","orcid":"https://orcid.org/0000-0003-4899-0819"},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Saravanan Dhanasekaran","raw_affiliation_strings":["Power Electronics &amp; Drives Group, Department of Electrical Engineering, Indian Institute of Technology, Madras, Chennai, India"],"raw_orcid":"https://orcid.org/0000-0003-4899-0819","affiliations":[{"raw_affiliation_string":"Power Electronics &amp; Drives Group, Department of Electrical Engineering, Indian Institute of Technology, Madras, Chennai, India","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110055206","display_name":"P. Ganesan","orcid":null},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"P. Ganesan","raw_affiliation_strings":["Power Electronics &amp; Drives Group, Department of Electrical Engineering, Indian Institute of Technology, Madras, Chennai, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Electronics &amp; Drives Group, Department of Electrical Engineering, Indian Institute of Technology, Madras, Chennai, India","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007622780","display_name":"Kamalesh Hatua","orcid":"https://orcid.org/0000-0003-4871-2149"},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Kamalesh Hatua","raw_affiliation_strings":["Power Electronics &amp; Drives Group, Department of Electrical Engineering, Indian Institute of Technology, Madras, Chennai, India"],"raw_orcid":"https://orcid.org/0000-0003-4871-2149","affiliations":[{"raw_affiliation_string":"Power Electronics &amp; Drives Group, Department of Electrical Engineering, Indian Institute of Technology, Madras, Chennai, India","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038521943","display_name":"Subhashish Bhattacharya","orcid":"https://orcid.org/0000-0001-9311-5744"},"institutions":[{"id":"https://openalex.org/I1311060795","display_name":"U.S. National Science Foundation","ror":"https://ror.org/021nxhr62","country_code":"US","type":"government","lineage":["https://openalex.org/I1311060795"]},{"id":"https://openalex.org/I137902535","display_name":"North Carolina State University","ror":"https://ror.org/04tj63d06","country_code":"US","type":"education","lineage":["https://openalex.org/I137902535"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Subhashish Bhattacharya","raw_affiliation_strings":["National Science Foundations Engineering Research Center for Future Renewable Electric Energy Delivery and Management (FREEDM) Systems, Department of Electrical Engineering, North Carolina State University, Raleigh, NC, USA"],"raw_orcid":"https://orcid.org/0000-0001-9311-5744","affiliations":[{"raw_affiliation_string":"National Science Foundations Engineering Research Center for Future Renewable Electric Energy Delivery and Management (FREEDM) Systems, Department of Electrical Engineering, North Carolina State University, Raleigh, NC, USA","institution_ids":["https://openalex.org/I1311060795","https://openalex.org/I137902535"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.6273,"has_fulltext":false,"cited_by_count":25,"citation_normalized_percentile":{"value":0.83846666,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"69","issue":"12","first_page":"12402","last_page":"12413"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9932000041007996,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/jitter","display_name":"Jitter","score":0.5820614099502563},{"id":"https://openalex.org/keywords/pulse","display_name":"Pulse (music)","score":0.5783035159111023},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5012214183807373},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4866064786911011},{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.4664119482040405},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4552243947982788},{"id":"https://openalex.org/keywords/and-gate","display_name":"AND gate","score":0.44556936621665955},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.41779959201812744},{"id":"https://openalex.org/keywords/inductance","display_name":"Inductance","score":0.417459100484848},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.39220747351646423},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.36768656969070435},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.35830482840538025},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.17833441495895386},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16185784339904785},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16110089421272278}],"concepts":[{"id":"https://openalex.org/C134652429","wikidata":"https://www.wikidata.org/wiki/Q1052698","display_name":"Jitter","level":2,"score":0.5820614099502563},{"id":"https://openalex.org/C2780167933","wikidata":"https://www.wikidata.org/wiki/Q1550652","display_name":"Pulse (music)","level":3,"score":0.5783035159111023},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5012214183807373},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4866064786911011},{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.4664119482040405},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4552243947982788},{"id":"https://openalex.org/C10418432","wikidata":"https://www.wikidata.org/wiki/Q560370","display_name":"AND gate","level":3,"score":0.44556936621665955},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.41779959201812744},{"id":"https://openalex.org/C29210110","wikidata":"https://www.wikidata.org/wiki/Q177897","display_name":"Inductance","level":3,"score":0.417459100484848},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.39220747351646423},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36768656969070435},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35830482840538025},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17833441495895386},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16185784339904785},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16110089421272278}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tie.2021.3128907","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2021.3128907","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G2647716132","display_name":null,"funder_award_id":"25(3)/2018-ESDA","funder_id":"https://openalex.org/F4320325255","funder_display_name":"Ministry of Electronics and Information technology"}],"funders":[{"id":"https://openalex.org/F4320325255","display_name":"Ministry of Electronics and Information technology","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1963966966","https://openalex.org/W1969012889","https://openalex.org/W1977772434","https://openalex.org/W1984928169","https://openalex.org/W2067150476","https://openalex.org/W2589613347","https://openalex.org/W2769623822","https://openalex.org/W2803739488","https://openalex.org/W2806110253","https://openalex.org/W2890471863","https://openalex.org/W2947047788","https://openalex.org/W2987027517","https://openalex.org/W3037532073","https://openalex.org/W3039467864","https://openalex.org/W3095071686","https://openalex.org/W3097144641","https://openalex.org/W3107845073","https://openalex.org/W3111270381","https://openalex.org/W3145609365"],"related_works":["https://openalex.org/W2121182846","https://openalex.org/W1522446673","https://openalex.org/W1485868897","https://openalex.org/W2155789024","https://openalex.org/W2589023056","https://openalex.org/W2785588703","https://openalex.org/W3183709907","https://openalex.org/W4318262165","https://openalex.org/W4310450577","https://openalex.org/W2104636536"],"abstract_inverted_index":{"In":[0,100],"this":[1],"article,":[2],"series":[3,149],"connection":[4],"of":[5,14,24,47,51,83,91,122,173],"SiC":[6,25,156],"MOSFETs":[7,26],"has":[8,186],"been":[9],"attempted":[10],"with":[11,142],"the":[12,45,59,64,68,81,84,89,96,104,120,127,192,201],"help":[13],"an":[15],"active":[16],"gate":[17,22,52,60,69,97,203],"driving":[18,204],"(AGD)":[19],"technique.":[20,205],"The":[21,129,158,184],"currents":[23],"are":[27],"actively":[28],"controlled":[29],"in":[30,44,58,108,119,126,136,148,191],"such":[31,109],"a":[32,48,77,110,137],"way":[33,111],"that":[34,112],"several":[35],"devices":[36,147],"can":[37,79,115],"switch":[38],"fast":[39,113],"(within":[40],"50":[41],"ns)":[42],"even":[43,118],"presence":[46,121],"moderate":[49,123],"amount":[50],"pulse":[53,70,98,139],"delay":[54],"mismatch":[55],"and":[56,144,166,175],"jitter":[57],"pulse.":[61],"This":[62],"enables":[63],"AGD\u2019s":[65],"to":[66,102,200],"share":[67],"signal":[71],"information":[72],"among":[73],"each":[74],"other.":[75],"Such":[76],"feature":[78],"reduce":[80],"cost":[82],"net":[85],"solution":[86],"by":[87],"reducing":[88],"number":[90],"optical":[92],"cables":[93],"required":[94],"for":[95],"transmission.":[99],"addition":[101],"this,":[103],"AGD":[105,131,185],"is":[106,133],"designed":[107],"switching":[114,146,171,197],"be":[116],"achieved":[117],"parasitic":[124],"inductance":[125],"layout.":[128],"proposed":[130],"technique":[132],"experimentally":[134],"verified":[135],"double":[138],"test":[140],"setup":[141],"two":[143],"four":[145],"using":[150],"32":[151],"A,":[152],"1":[153],"kV":[154],"CREE":[155],"MOSFETs.":[157],"experimental":[159],"results":[160],"show":[161],"turn-":[162,167,193],"<sc":[163,168,194],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[164,169,195],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">on</small>":[165],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">off</small>":[170,196],"times":[172],"45":[174],"34":[176],"ns,":[177],"respectively,":[178],"at":[179],"35":[180],"A":[181],"load":[182],"current.":[183],"also":[187],"shown":[188],"47%":[189],"reduction":[190],"losses":[198],"compared":[199],"passive":[202]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":7},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":9},{"year":2022,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}