{"id":"https://openalex.org/W3195759361","doi":"https://doi.org/10.1109/tie.2021.3104592","title":"<i>I</i> <sub>G</sub>- and <i>V</i> <sub>GS</sub>-Dependent Dynamic <i>R</i> <sub>ON</sub> Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs","display_name":"<i>I</i> <sub>G</sub>- and <i>V</i> <sub>GS</sub>-Dependent Dynamic <i>R</i> <sub>ON</sub> Characterization of Commercial High-Voltage p-GaN Gate Power HEMTs","publication_year":2021,"publication_date":"2021-08-19","ids":{"openalex":"https://openalex.org/W3195759361","doi":"https://doi.org/10.1109/tie.2021.3104592","mag":"3195759361"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2021.3104592","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2021.3104592","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010842863","display_name":"Kailun Zhong","orcid":"https://orcid.org/0000-0002-2184-2456"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":true,"raw_author_name":"Kailun Zhong","raw_affiliation_strings":["Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong"],"raw_orcid":"https://orcid.org/0000-0002-2184-2456","affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100640243","display_name":"Jin Wei","orcid":"https://orcid.org/0000-0001-6124-0110"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Jin Wei","raw_affiliation_strings":["Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong"],"raw_orcid":"https://orcid.org/0000-0001-6124-0110","affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004010435","display_name":"Jiabei He","orcid":"https://orcid.org/0000-0003-1296-3675"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Jiabei He","raw_affiliation_strings":["Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong"],"raw_orcid":"https://orcid.org/0000-0003-1296-3675","affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089120099","display_name":"Sirui Feng","orcid":"https://orcid.org/0000-0003-2587-7936"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Sirui Feng","raw_affiliation_strings":["Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101651327","display_name":"Yuru Wang","orcid":"https://orcid.org/0000-0002-9741-8387"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Yuru Wang","raw_affiliation_strings":["Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong"],"raw_orcid":"https://orcid.org/0000-0002-9741-8387","affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015828304","display_name":"Song Yang","orcid":"https://orcid.org/0000-0002-7251-3345"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Song Yang","raw_affiliation_strings":["Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong"],"raw_orcid":"https://orcid.org/0000-0002-7251-3345","affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5085053354","display_name":"Kevin J. Chen","orcid":"https://orcid.org/0000-0002-0659-2022"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Kevin J. Chen","raw_affiliation_strings":["Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong"],"raw_orcid":"https://orcid.org/0000-0002-0659-2022","affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5010842863"],"corresponding_institution_ids":["https://openalex.org/I200769079"],"apc_list":null,"apc_paid":null,"fwci":4.9994,"has_fulltext":false,"cited_by_count":41,"citation_normalized_percentile":{"value":0.95965851,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"69","issue":"8","first_page":"8387","last_page":"8395"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.5201233625411987},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.36819028854370117},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2802049517631531},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11473220586776733},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.08045929670333862}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.5201233625411987},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.36819028854370117},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2802049517631531},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11473220586776733},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.08045929670333862}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/tie.2021.3104592","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2021.3104592","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-113469","is_oa":false,"landing_page_url":"http://lbdiscover.ust.hk/uresolver?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rfr_id=info:sid/HKUST:SPI&rft.genre=article&rft.issn=0278-0046&rft.volume=&rft.issue=&rft.date=2021&rft.spage=&rft.aulast=Zhong&rft.aufirst=&rft.atitle=%26lt%3Bi%26gt%3BI%26lt%3B%2Fi%26gt%3B%26lt%3Bsub%26gt%3BG%26lt%3B%2Fsub%26gt%3B-+and+%26lt%3Bi%26gt%3BV%26lt%3B%2Fi%26gt%3B%26lt%3Bsub%26gt%3BGS%26lt%3B%2Fsub%26gt%3B-Dependent+Dynamic+%26lt%3Bi%26gt%3BR%26lt%3B%2Fi%26gt%3B%26lt%3Bsub%26gt%3BON%26lt%3B%2Fsub%26gt%3B+Characterization+of+Commercial+High-Voltage+%26lt%3Bi%26gt%3Bp%26lt%3B%2Fi%26gt%3B-GaN+Gate+Power+HEMTs&rft.title=IEEE+Transactions+on+Industrial+Electronics","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"},{"id":"pmh:oai:repository.ust.hk:1783.1-113469","is_oa":false,"landing_page_url":"http://repository.ust.hk/ir/Record/1783.1-113469","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G6250403749","display_name":null,"funder_award_id":"ITS/412/17FP","funder_id":"https://openalex.org/F4320324196","funder_display_name":"Innovation and Technology Commission - Hong Kong"}],"funders":[{"id":"https://openalex.org/F4320324196","display_name":"Innovation and Technology Commission - Hong Kong","ror":"https://ror.org/04vf9tr09"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":27,"referenced_works":["https://openalex.org/W1801635354","https://openalex.org/W1938622137","https://openalex.org/W2067348957","https://openalex.org/W2088351781","https://openalex.org/W2127246042","https://openalex.org/W2159764454","https://openalex.org/W2473219999","https://openalex.org/W2519239207","https://openalex.org/W2605388150","https://openalex.org/W2616529694","https://openalex.org/W2623811665","https://openalex.org/W2799182303","https://openalex.org/W2806602868","https://openalex.org/W2886892175","https://openalex.org/W2907770879","https://openalex.org/W2917100518","https://openalex.org/W2940690988","https://openalex.org/W2947616960","https://openalex.org/W2947685972","https://openalex.org/W2990419378","https://openalex.org/W2990448731","https://openalex.org/W3008991801","https://openalex.org/W3024406559","https://openalex.org/W3064053718","https://openalex.org/W3133688220","https://openalex.org/W3139430276","https://openalex.org/W3156144196"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036","https://openalex.org/W2271181815"],"abstract_inverted_index":{"The":[0,58],"dynamic":[1,125,142,180,236,260],"on-resistance":[2],"(":[3,94,158],"<italic":[4,17,30,76,85,95,110,126,135,143,159,169,181,192,204,217,237,261,275],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[5,8,18,31,77,86,96,99,105,111,127,130,136,144,147,160,163,170,173,182,185,193,196,205,208,218,221,238,241,262,265,276],"xmlns:xlink=\"http://www.w3.org/1999/xlink\"><small>r</small></i>":[6,128,145,183,239,263],"<sub":[7,98,129,146,162,172,184,195,207,220,240,264],"xmlns:xlink=\"http://www.w3.org/1999/xlink\"><small>ON</small></sub>":[9,131,148,186,242,266],")":[10,101,165],"of":[11,61,74,259],"two":[12,72],"mainstream":[13],"600":[14],"V/650":[15],"V":[16],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">p</i>":[19,32,78,87,112,137,277],"-GaN":[20,33,79,88,113,138,278],"gate":[21,34,48,80,89,91,114,139,155,279],"power":[22,81],"high-electron-mobility":[23],"transistors":[24],"(HEMTs)":[25],"with":[26],"Ohmic-":[27],"and":[28,42,54,120,215,247,269,273],"Schottky-type":[29,134,274],"contacts":[35],"are":[36],"characterized":[37],"under":[38,51,198,243],"the":[39,47,103,109,141,154,167,177,189,229,235,257],"hard-switching":[40],"condition":[41,251],"show":[43],"strong":[44,151],"dependences":[45],"on":[46,153],"driving":[49],"conditions":[50],"both":[52],"double-pulse":[53],"multipulse":[55],"testing":[56],"modes.":[57],"statistical":[59],"measurement":[60],"multiple":[62],"samples":[63],"indicates":[64],"this":[65],"is":[66,267],"a":[67,116,123,150],"representative":[68],"phenomenon":[69],"in":[70,179,233],"these":[71],"types":[73],"commercial":[75],"HEMTs.":[82],"For":[83,133],"Ohmic-type":[84,272],"HEMT,":[90,140],"injection":[92],"current":[93],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">I</i>":[97,206],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">G</sub>":[100,209],"at":[102],"<sc":[104],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">on</small>":[106],"state":[107],"from":[108],"facilitates":[115],"faster":[117],"detrapping":[118],"process":[119],"contributes":[121],"to":[122,212,225],"smaller":[124],".":[132],"shows":[149],"dependence":[152],"overdrive":[156],"voltage":[157],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">V</i>":[161,171,194,219],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">GS</sub>":[164,174,222],"because":[166],"higher":[168,216],"can":[175],"compensate":[176],"increase":[178],"induced":[187],"by":[188],"positively":[190],"shifted":[191],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">TH</sub>":[197],"high":[199,244,248],"drain":[200,249],"bias.":[201],"A":[202],"larger":[203],"(from":[210,223],"1.2":[211],"22":[213],"mA)":[214],"5":[224],"7":[226],"V)":[227],"play":[228],"most":[230],"important":[231],"role":[232],"suppressing":[234],"switching":[245],"frequency":[246],"bias":[250],"(i.e.,":[252],"400":[253],"kHz/400":[254],"V),":[255],"where":[256],"reduction":[258],"13.6%":[268],"17.1%":[270],"for":[271],"HEMTs,":[280],"respectively.":[281]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":9},{"year":2024,"cited_by_count":13},{"year":2023,"cited_by_count":13},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2021-08-30T00:00:00"}