{"id":"https://openalex.org/W3183553132","doi":"https://doi.org/10.1109/tie.2021.3099247","title":"Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs","display_name":"Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs","publication_year":2021,"publication_date":"2021-07-28","ids":{"openalex":"https://openalex.org/W3183553132","doi":"https://doi.org/10.1109/tie.2021.3099247","mag":"3183553132"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2021.3099247","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2021.3099247","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5068472073","display_name":"Jiahui Sun","orcid":"https://orcid.org/0000-0002-2339-516X"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":true,"raw_author_name":"Jiahui Sun","raw_affiliation_strings":["Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong","Hong Kong University of Science and Technology Shenzhen Research Institute, Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0002-2339-516X","affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]},{"raw_affiliation_string":"Hong Kong University of Science and Technology Shenzhen Research Institute, Shenzhen, China","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010842863","display_name":"Kailun Zhong","orcid":"https://orcid.org/0000-0002-2184-2456"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Kailun Zhong","raw_affiliation_strings":["Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong"],"raw_orcid":"https://orcid.org/0000-0002-2184-2456","affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000765875","display_name":"Zheyang Zheng","orcid":"https://orcid.org/0000-0002-6455-9300"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Zheyang Zheng","raw_affiliation_strings":["Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong","Hong Kong University of Science and Technology Shenzhen Research Institute, Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0002-6455-9300","affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]},{"raw_affiliation_string":"Hong Kong University of Science and Technology Shenzhen Research Institute, Shenzhen, China","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072992944","display_name":"Gang Lyu","orcid":"https://orcid.org/0000-0002-1842-3891"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Gang Lyu","raw_affiliation_strings":["Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong"],"raw_orcid":"https://orcid.org/0000-0002-1842-3891","affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5085053354","display_name":"Kevin J. Chen","orcid":"https://orcid.org/0000-0002-0659-2022"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Kevin J. Chen","raw_affiliation_strings":["Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong","Hong Kong University of Science and Technology Shenzhen Research Institute, Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0002-0659-2022","affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]},{"raw_affiliation_string":"Hong Kong University of Science and Technology Shenzhen Research Institute, Shenzhen, China","institution_ids":["https://openalex.org/I200769079"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5068472073"],"corresponding_institution_ids":["https://openalex.org/I200769079"],"apc_list":null,"apc_paid":null,"fwci":1.2201,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.78797717,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"69","issue":"7","first_page":"7340","last_page":"7348"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/jfet","display_name":"JFET","score":0.9386037588119507},{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.8944610357284546},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8451972603797913},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6563405990600586},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6550427675247192},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.5602474808692932},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5325813293457031},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4714024066925049},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4504035413265228},{"id":"https://openalex.org/keywords/thermal-runaway","display_name":"Thermal runaway","score":0.4358086585998535},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.41201138496398926},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.380290687084198},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2262486219406128},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.21865180134773254},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.12367790937423706},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.11819815635681152},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.07567298412322998},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07250240445137024},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.0719209611415863},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.06333684921264648}],"concepts":[{"id":"https://openalex.org/C2778484494","wikidata":"https://www.wikidata.org/wiki/Q385520","display_name":"JFET","level":5,"score":0.9386037588119507},{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.8944610357284546},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8451972603797913},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6563405990600586},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6550427675247192},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5602474808692932},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5325813293457031},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4714024066925049},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4504035413265228},{"id":"https://openalex.org/C72688512","wikidata":"https://www.wikidata.org/wiki/Q908282","display_name":"Thermal runaway","level":4,"score":0.4358086585998535},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.41201138496398926},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.380290687084198},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2262486219406128},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.21865180134773254},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12367790937423706},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.11819815635681152},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.07567298412322998},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07250240445137024},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0719209611415863},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.06333684921264648},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C555008776","wikidata":"https://www.wikidata.org/wiki/Q267298","display_name":"Battery (electricity)","level":3,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/tie.2021.3099247","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2021.3099247","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-112339","is_oa":false,"landing_page_url":"https://repository.hkust.edu.hk/ir/Record/1783.1-112339","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Article"},{"id":"pmh:oai:repository.ust.hk:1783.1-112339","is_oa":false,"landing_page_url":"http://repository.ust.hk/ir/Record/1783.1-112339","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.49000000953674316,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":27,"referenced_works":["https://openalex.org/W1540626418","https://openalex.org/W2013059662","https://openalex.org/W2042204966","https://openalex.org/W2122381836","https://openalex.org/W2122890546","https://openalex.org/W2127407240","https://openalex.org/W2346063839","https://openalex.org/W2346705705","https://openalex.org/W2588330291","https://openalex.org/W2738291582","https://openalex.org/W2807887785","https://openalex.org/W2810442817","https://openalex.org/W2894798347","https://openalex.org/W2895717736","https://openalex.org/W2897738090","https://openalex.org/W2941383379","https://openalex.org/W2974858747","https://openalex.org/W2981192233","https://openalex.org/W2986336370","https://openalex.org/W2991519820","https://openalex.org/W2995326691","https://openalex.org/W3005358022","https://openalex.org/W3043959687","https://openalex.org/W3045812610","https://openalex.org/W3048434124","https://openalex.org/W3049041787","https://openalex.org/W3159571625"],"related_works":["https://openalex.org/W2810442817","https://openalex.org/W1974903908","https://openalex.org/W2108628515","https://openalex.org/W2552759561","https://openalex.org/W2246863391","https://openalex.org/W4310611346","https://openalex.org/W4290997568","https://openalex.org/W4308644164","https://openalex.org/W2116493397","https://openalex.org/W2965790399"],"abstract_inverted_index":{"Although":[0],"the":[1,20,37,73,77,84,92,95,100,103,109,124,130,134,139,143,148,152,159,168,172],"gallium":[2],"nitride":[3],"(GaN)":[4],"high-electron-mobility":[5],"transistor/silicon":[6],"carbide":[7],"(SiC)":[8],"junction":[9,140],"field-effect":[10,23],"transistor":[11,24],"(JFET)":[12],"cascode":[13,44,59,78,160],"device":[14,79,161],"exhibits":[15],"certain":[16],"performance":[17],"advantages":[18],"over":[19],"SiC":[21,56,74,85,98,125],"metal\u2013oxide\u2013semiconductor":[22],"(MOSFET),":[25],"its":[26],"robustness":[27,40],"in":[28,72,83,99,111,123,142],"harsh":[29],"operating":[30],"conditions":[31],"is":[32,46,89,127],"unknown.":[33],"In":[34],"this":[35],"work,":[36],"short-circuit":[38],"(SC)":[39],"of":[41,53,76,94,158,167],"650-V":[42],"GaN/SiC":[43,58],"devices":[45,60],"characterized,":[47],"analyzed,":[48],"and":[49,80,102,116,138],"compared":[50],"with":[51,91],"that":[52],"several":[54],"mainstream":[55],"MOSFETs.":[57],"exhibit":[61],"competitive":[62],"SC":[63,112,155],"capability.":[64],"Different":[65],"failure":[66,114],"modes":[67],"are":[68],"observed:":[69],"thermal":[70,117,121],"runaway":[71,122],"JFET":[75,101,126],"gate-to-source":[81],"breakdown":[82],"MOSFET.":[86],"The":[87,154],"difference":[88],"associated":[90],"configuration":[93],"dielectric":[96],"above":[97],"source":[104,149,173],"pad":[105,150],"layout.":[106],"According":[107],"to":[108,129],"waveforms":[110],"events,":[113],"spots,":[115],"simulation":[118],"results,":[119],"a":[120],"attributed":[128],"positive":[131],"feedback":[132],"between":[133],"drain":[135],"leakage":[136],"current":[137],"temperature":[141],"local":[144],"area":[145,170],"(hotspot)":[146],"without":[147,171],"on":[151],"top.":[153],"withstand":[156],"time":[157],"can":[162],"be":[163],"extended":[164],"by":[165],"reduction":[166],"active":[169],"pad.":[174]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":1}],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2025-10-10T00:00:00"}