{"id":"https://openalex.org/W3134449109","doi":"https://doi.org/10.1109/tie.2021.3059544","title":"High-Voltage Hybrid IGBT Power Modules for Miniaturization of Rolling Stock Traction Inverters","display_name":"High-Voltage Hybrid IGBT Power Modules for Miniaturization of Rolling Stock Traction Inverters","publication_year":2021,"publication_date":"2021-03-01","ids":{"openalex":"https://openalex.org/W3134449109","doi":"https://doi.org/10.1109/tie.2021.3059544","mag":"3134449109"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2021.3059544","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2021.3059544","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100331049","display_name":"Xiang Li","orcid":"https://orcid.org/0000-0002-3325-0079"},"institutions":[{"id":"https://openalex.org/I22513266","display_name":"Dynex Semiconductor (United Kingdom)","ror":"https://ror.org/03210bg97","country_code":"GB","type":"company","lineage":["https://openalex.org/I22513266"]}],"countries":["GB"],"is_corresponding":true,"raw_author_name":"Xiang Li","raw_affiliation_strings":["Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K"],"raw_orcid":"https://orcid.org/0000-0002-3325-0079","affiliations":[{"raw_affiliation_string":"Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K","institution_ids":["https://openalex.org/I22513266"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004147322","display_name":"Daohui Li","orcid":"https://orcid.org/0000-0003-3117-0240"},"institutions":[{"id":"https://openalex.org/I22513266","display_name":"Dynex Semiconductor (United Kingdom)","ror":"https://ror.org/03210bg97","country_code":"GB","type":"company","lineage":["https://openalex.org/I22513266"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Daohui Li","raw_affiliation_strings":["Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K"],"raw_orcid":"https://orcid.org/0000-0003-3117-0240","affiliations":[{"raw_affiliation_string":"Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K","institution_ids":["https://openalex.org/I22513266"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051789348","display_name":"Guiqin Chang","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Guiqin Chang","raw_affiliation_strings":["Research and Development Center, Zhuzhou CRRC Times Semiconductor Ltd., Zhuzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Center, Zhuzhou CRRC Times Semiconductor Ltd., Zhuzhou, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103023018","display_name":"Wei Gong","orcid":"https://orcid.org/0000-0002-5925-7682"},"institutions":[{"id":"https://openalex.org/I22513266","display_name":"Dynex Semiconductor (United Kingdom)","ror":"https://ror.org/03210bg97","country_code":"GB","type":"company","lineage":["https://openalex.org/I22513266"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Wei Gong","raw_affiliation_strings":["Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K","institution_ids":["https://openalex.org/I22513266"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090276815","display_name":"Matthew Packwood","orcid":null},"institutions":[{"id":"https://openalex.org/I22513266","display_name":"Dynex Semiconductor (United Kingdom)","ror":"https://ror.org/03210bg97","country_code":"GB","type":"company","lineage":["https://openalex.org/I22513266"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Matthew Packwood","raw_affiliation_strings":["Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K","institution_ids":["https://openalex.org/I22513266"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060474446","display_name":"Daniel Pottage","orcid":"https://orcid.org/0000-0001-9482-7372"},"institutions":[{"id":"https://openalex.org/I22513266","display_name":"Dynex Semiconductor (United Kingdom)","ror":"https://ror.org/03210bg97","country_code":"GB","type":"company","lineage":["https://openalex.org/I22513266"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Daniel Pottage","raw_affiliation_strings":["Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K","institution_ids":["https://openalex.org/I22513266"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100758518","display_name":"Yangang Wang","orcid":"https://orcid.org/0000-0002-1325-9252"},"institutions":[{"id":"https://openalex.org/I22513266","display_name":"Dynex Semiconductor (United Kingdom)","ror":"https://ror.org/03210bg97","country_code":"GB","type":"company","lineage":["https://openalex.org/I22513266"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Yangang Wang","raw_affiliation_strings":["Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Center, Dynex Semiconductor Ltd., Lincoln, U.K","institution_ids":["https://openalex.org/I22513266"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101096828","display_name":"Haihui Luo","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Haihui Luo","raw_affiliation_strings":["Research and Development Center, Zhuzhou CRRC Times Semiconductor Ltd., Zhuzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Center, Zhuzhou CRRC Times Semiconductor Ltd., Zhuzhou, China","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5083032568","display_name":"Guoyou Liu","orcid":"https://orcid.org/0000-0002-0006-9302"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Guoyou Liu","raw_affiliation_strings":["Research and Development Center, Zhuzhou CRRC Times Semiconductor Ltd., Zhuzhou, China"],"raw_orcid":"https://orcid.org/0000-0002-0006-9302","affiliations":[{"raw_affiliation_string":"Research and Development Center, Zhuzhou CRRC Times Semiconductor Ltd., Zhuzhou, China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5100331049"],"corresponding_institution_ids":["https://openalex.org/I22513266"],"apc_list":null,"apc_paid":null,"fwci":2.0335,"has_fulltext":false,"cited_by_count":26,"citation_normalized_percentile":{"value":0.86604216,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"69","issue":"2","first_page":"1266","last_page":"1275"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.801506519317627},{"id":"https://openalex.org/keywords/miniaturization","display_name":"Miniaturization","score":0.667227029800415},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.5523463487625122},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5350061655044556},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.4796507656574249},{"id":"https://openalex.org/keywords/traction","display_name":"Traction (geology)","score":0.46956920623779297},{"id":"https://openalex.org/keywords/power-module","display_name":"Power module","score":0.46006619930267334},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.44942402839660645},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.44819653034210205},{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.44126689434051514},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41833046078681946},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4156174063682556},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.41233325004577637},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4106690287590027},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.39048242568969727},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.27597787976264954},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.21808141469955444}],"concepts":[{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.801506519317627},{"id":"https://openalex.org/C57528182","wikidata":"https://www.wikidata.org/wiki/Q1271842","display_name":"Miniaturization","level":2,"score":0.667227029800415},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.5523463487625122},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5350061655044556},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.4796507656574249},{"id":"https://openalex.org/C38834483","wikidata":"https://www.wikidata.org/wiki/Q17000223","display_name":"Traction (geology)","level":2,"score":0.46956920623779297},{"id":"https://openalex.org/C141812795","wikidata":"https://www.wikidata.org/wiki/Q7236534","display_name":"Power module","level":3,"score":0.46006619930267334},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.44942402839660645},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.44819653034210205},{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.44126689434051514},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41833046078681946},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4156174063682556},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.41233325004577637},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4106690287590027},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.39048242568969727},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.27597787976264954},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.21808141469955444},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tie.2021.3059544","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2021.3059544","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1914882978","https://openalex.org/W1999601534","https://openalex.org/W2038936231","https://openalex.org/W2072643568","https://openalex.org/W2117029960","https://openalex.org/W2277867084","https://openalex.org/W2399260228","https://openalex.org/W2502065042","https://openalex.org/W2548234302","https://openalex.org/W2613995480","https://openalex.org/W2743199150","https://openalex.org/W2768916411","https://openalex.org/W2771001691","https://openalex.org/W2807076329","https://openalex.org/W2899138406","https://openalex.org/W2903750072","https://openalex.org/W2951818451","https://openalex.org/W2958959725","https://openalex.org/W2980143749","https://openalex.org/W2991361821","https://openalex.org/W4253034633","https://openalex.org/W6694942178","https://openalex.org/W6769254059","https://openalex.org/W6794956411","https://openalex.org/W6990348336"],"related_works":["https://openalex.org/W2564193318","https://openalex.org/W2347268629","https://openalex.org/W1900689440","https://openalex.org/W3165795363","https://openalex.org/W2348060780","https://openalex.org/W3088879894","https://openalex.org/W2378831118","https://openalex.org/W1524401369","https://openalex.org/W3034942151","https://openalex.org/W2295557031"],"abstract_inverted_index":{"A":[0],"type":[1],"of":[2,30,78,99,117,138,159,171],"3.3-kV/450-A":[3],"half-bridge":[4],"insulated-gate":[5],"bipolar":[6],"transistor":[7],"power":[8,66],"module":[9,40,87,120,149],"combining":[10],"the":[11,28,31,45,53,64,82,91,100,118,125,130,172],"silicon":[12,15],"(Si)":[13],"and":[14,22,52,90,114],"carbide":[16],"(SiC)":[17],"technologies":[18],"has":[19],"been":[20],"developed":[21,42],"reported":[23],"in":[24,71,81,109,152],"this":[25],"article,":[26],"for":[27,97,168],"miniaturization":[29],"Chinese":[32],"high-speed":[33,174],"railway":[34],"rolling":[35],"stock":[36],"traction":[37,83,176],"inverters.":[38,177],"This":[39],"is":[41,141,163],"by":[43,144],"integrating":[44],"next-generation":[46],"industrial":[47],"standard":[48],"high-voltage":[49],"packaging":[50],"topology":[51],"state-of-the-art":[54],"3.3":[55],"kV":[56],"wide":[57],"bandgap":[58],"semiconductor":[59],"chip":[60],"technology,":[61],"to":[62,75,156],"reduce":[63],"waste":[65],"dissipation":[67],"during":[68],"operation,":[69],"which":[70,162],"turn":[72],"can":[73],"lead":[74],"effective":[76,166],"downsizing":[77],"key":[79],"components":[80],"inverter":[84,134],"design.":[85],"The":[86,111,147],"layout":[88],"characteristics":[89],"SiC":[92],"Schottky":[93],"barrier":[94],"diodes":[95,105],"design":[96],"substitution":[98],"conventional":[101],"Si":[102],"fast":[103],"recovery":[104],"will":[106],"be":[107],"described":[108],"detail.":[110],"mechanical,":[112],"thermal,":[113],"electrical":[115],"performances":[116],"hybrid":[119,148],"are":[121],"compared":[122],"comprehensively":[123],"with":[124],"Si-based":[126],"counterpart.":[127],"Based":[128],"on":[129],"experimental":[131],"results,":[132],"an":[133],"system":[135,160],"level":[136],"evaluation":[137],"both":[139],"modules":[140],"also":[142],"conducted":[143],"electro-thermal":[145],"simulation.":[146],"shows":[150],"advantages":[151],"loss":[153],"reduction":[154],"leading":[155],"great":[157],"potential":[158],"miniaturization,":[161],"a":[164],"cost":[165],"solution":[167],"massive":[169],"upgrading":[170],"existing":[173],"train":[175]},"counts_by_year":[{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":7},{"year":2023,"cited_by_count":6},{"year":2022,"cited_by_count":6},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}