{"id":"https://openalex.org/W3089973698","doi":"https://doi.org/10.1109/tie.2020.3026283","title":"A Unified Electrothermal Behavior Modeling Method for Both SiC MOSFET and GaN HEMT","display_name":"A Unified Electrothermal Behavior Modeling Method for Both SiC MOSFET and GaN HEMT","publication_year":2020,"publication_date":"2020-09-29","ids":{"openalex":"https://openalex.org/W3089973698","doi":"https://doi.org/10.1109/tie.2020.3026283","mag":"3089973698"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2020.3026283","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2020.3026283","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5003770159","display_name":"Long Xiao","orcid":"https://orcid.org/0000-0001-9711-7173"},"institutions":[{"id":"https://openalex.org/I4210162774","display_name":"Minnan University of Science and Technology","ror":"https://ror.org/05sg01b25","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210162774"]},{"id":"https://openalex.org/I4391767858","display_name":"State Key Laboratory of Synthetical Automation for Process Industries","ror":"https://ror.org/0380ng272","country_code":null,"type":"facility","lineage":["https://openalex.org/I4391767858","https://openalex.org/I9224756"]},{"id":"https://openalex.org/I9224756","display_name":"Northeastern University","ror":"https://ror.org/03awzbc87","country_code":"CN","type":"education","lineage":["https://openalex.org/I9224756"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xiao Long","raw_affiliation_strings":["School of Electronic and Electric Engineering, Minnan University of Science and Technology, Quanzhou, China","State Key Laboratory of Synthetical Automation for Process Industries, Northeast University, Shenyang, China","School of Electronic and Electric Engineering, Minnan University of Science and Technology, Quanzhou, China; State Key Laboratory of Synthetical Automation for Process Industries, Northeast University, Shenyang, China"],"raw_orcid":"https://orcid.org/0000-0001-9711-7173","affiliations":[{"raw_affiliation_string":"School of Electronic and Electric Engineering, Minnan University of Science and Technology, Quanzhou, China","institution_ids":["https://openalex.org/I4210162774"]},{"raw_affiliation_string":"State Key Laboratory of Synthetical Automation for Process Industries, Northeast University, Shenyang, China","institution_ids":["https://openalex.org/I9224756","https://openalex.org/I4391767858"]},{"raw_affiliation_string":"School of Electronic and Electric Engineering, Minnan University of Science and Technology, Quanzhou, China; State Key Laboratory of Synthetical Automation for Process Industries, Northeast University, Shenyang, China","institution_ids":["https://openalex.org/I4210162774","https://openalex.org/I4391767858"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067978681","display_name":"Jun Zhao","orcid":"https://orcid.org/0000-0002-8866-7197"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhao Jun","raw_affiliation_strings":["College of Electric Engineering, Zhejiang University, Hangzhou, China","College of Electric Engineering, Zhejiang University, Hangzhou China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electric Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]},{"raw_affiliation_string":"College of Electric Engineering, Zhejiang University, Hangzhou China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100666358","display_name":"Botao Zhang","orcid":"https://orcid.org/0000-0001-7545-1218"},"institutions":[{"id":"https://openalex.org/I43922553","display_name":"Wuhan University of Science and Technology","ror":"https://ror.org/00e4hrk88","country_code":"CN","type":"education","lineage":["https://openalex.org/I43922553"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Botao Zhang","raw_affiliation_strings":["School of Computer Science and Technology, Wuhan University of Science and Technology, Wuhan, China","School of computer science and technology, Wuhan University of science and technology,Wuhan,China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Computer Science and Technology, Wuhan University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I43922553"]},{"raw_affiliation_string":"School of computer science and technology, Wuhan University of science and technology,Wuhan,China","institution_ids":["https://openalex.org/I43922553"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100364584","display_name":"Dongdong Chen","orcid":"https://orcid.org/0000-0002-3492-3394"},"institutions":[{"id":"https://openalex.org/I4210162774","display_name":"Minnan University of Science and Technology","ror":"https://ror.org/05sg01b25","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210162774"]},{"id":"https://openalex.org/I4391767858","display_name":"State Key Laboratory of Synthetical Automation for Process Industries","ror":"https://ror.org/0380ng272","country_code":null,"type":"facility","lineage":["https://openalex.org/I4391767858","https://openalex.org/I9224756"]},{"id":"https://openalex.org/I9224756","display_name":"Northeastern University","ror":"https://ror.org/03awzbc87","country_code":"CN","type":"education","lineage":["https://openalex.org/I9224756"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dongdong Chen","raw_affiliation_strings":["School of Electronic and Electric Engineering, Minnan University of Science and Technology, Quanzhou, China","State Key Laboratory of Synthetical Automation for Process Industries, Northeast University, Shenyang, China","School of Electronic and Electric Engineering, Minnan University of Science and Technology, Quanzhou, China; State Key Laboratory of Synthetical Automation for Process Industries, Northeast University, Shenyang, China"],"raw_orcid":"https://orcid.org/0000-0002-3492-3394","affiliations":[{"raw_affiliation_string":"School of Electronic and Electric Engineering, Minnan University of Science and Technology, Quanzhou, China","institution_ids":["https://openalex.org/I4210162774"]},{"raw_affiliation_string":"State Key Laboratory of Synthetical Automation for Process Industries, Northeast University, Shenyang, China","institution_ids":["https://openalex.org/I9224756","https://openalex.org/I4391767858"]},{"raw_affiliation_string":"School of Electronic and Electric Engineering, Minnan University of Science and Technology, Quanzhou, China; State Key Laboratory of Synthetical Automation for Process Industries, Northeast University, Shenyang, China","institution_ids":["https://openalex.org/I4210162774","https://openalex.org/I4391767858"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101405854","display_name":"Wu Liang","orcid":"https://orcid.org/0000-0003-2568-5301"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wu Liang","raw_affiliation_strings":["College of Electric Engineering, Zhejiang University, Hangzhou, China","College of Electric Engineering, Zhejiang University, Hangzhou China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electric Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]},{"raw_affiliation_string":"College of Electric Engineering, Zhejiang University, Hangzhou China","institution_ids":["https://openalex.org/I76130692"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5003770159"],"corresponding_institution_ids":["https://openalex.org/I4210162774","https://openalex.org/I4391767858","https://openalex.org/I9224756"],"apc_list":null,"apc_paid":null,"fwci":0.8323,"has_fulltext":false,"cited_by_count":23,"citation_normalized_percentile":{"value":0.73246257,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":99},"biblio":{"volume":"68","issue":"10","first_page":"9366","last_page":"9375"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8125633597373962},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.7697271108627319},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7406445145606995},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.6971063613891602},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5719596743583679},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.4311607778072357},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.42867574095726013},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.423813134431839},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41595399379730225},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4084709882736206},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.3605363368988037},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.34412074089050293},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.29598987102508545},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.27184972167015076},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2260737121105194},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.21072429418563843},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.10785156488418579},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.0767589807510376}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8125633597373962},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.7697271108627319},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7406445145606995},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6971063613891602},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5719596743583679},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.4311607778072357},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.42867574095726013},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.423813134431839},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41595399379730225},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4084709882736206},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.3605363368988037},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.34412074089050293},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.29598987102508545},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.27184972167015076},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2260737121105194},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.21072429418563843},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.10785156488418579},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0767589807510376},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tie.2020.3026283","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2020.3026283","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6200000047683716,"id":"https://metadata.un.org/sdg/8","display_name":"Decent work and economic growth"}],"awards":[{"id":"https://openalex.org/G4963193803","display_name":null,"funder_award_id":"2020KF2105","funder_id":"https://openalex.org/F4320323086","funder_display_name":"Natural Science Foundation of Liaoning Province"}],"funders":[{"id":"https://openalex.org/F4320323086","display_name":"Natural Science Foundation of Liaoning Province","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":35,"referenced_works":["https://openalex.org/W170561561","https://openalex.org/W267840210","https://openalex.org/W1956843273","https://openalex.org/W1995113963","https://openalex.org/W2013137658","https://openalex.org/W2020497754","https://openalex.org/W2071470876","https://openalex.org/W2072477826","https://openalex.org/W2089007538","https://openalex.org/W2096760328","https://openalex.org/W2115142907","https://openalex.org/W2122579082","https://openalex.org/W2146719088","https://openalex.org/W2166315761","https://openalex.org/W2172415194","https://openalex.org/W2173495796","https://openalex.org/W2235607804","https://openalex.org/W2257584882","https://openalex.org/W2313672321","https://openalex.org/W2462900479","https://openalex.org/W2553142732","https://openalex.org/W2730500547","https://openalex.org/W2738097952","https://openalex.org/W2769914472","https://openalex.org/W2784419991","https://openalex.org/W2790147584","https://openalex.org/W2796464016","https://openalex.org/W2805163646","https://openalex.org/W2810158474","https://openalex.org/W2899305295","https://openalex.org/W2903128216","https://openalex.org/W2905722839","https://openalex.org/W2906276626","https://openalex.org/W2936688174","https://openalex.org/W4231893760"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W2559825181","https://openalex.org/W3209950509","https://openalex.org/W4377089489","https://openalex.org/W1975307200","https://openalex.org/W2613044742","https://openalex.org/W3088454288","https://openalex.org/W4313611767","https://openalex.org/W1491930864","https://openalex.org/W2954288238"],"abstract_inverted_index":{"This":[0],"article":[1],"has":[2,124,134],"presented":[3],"a":[4,87],"unified":[5],"electrothermal":[6],"behavior":[7,37],"modeling":[8,60,106,122,140],"method":[9,67,123,141],"for":[10],"both":[11,45,111],"silicon":[12],"carbide":[13],"(SiC)":[14],"metal":[15],"oxide":[16],"semiconductor":[17],"field":[18],"effect":[19],"transistor":[20,33],"(":[21],"<sc":[22,149],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[23,150],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">mosfet</small>":[24,151],")":[25],"and":[26,48,62,77,90,101,105,113,117,129,153],"gallium":[27],"nitride":[28],"(GaN)":[29],"high":[30],"electron":[31],"mobility":[32],"(HEMT).":[34],"The":[35,81,115],"electrothemal":[36],"of":[38,42,98,119],"these":[39],"two":[40],"kind":[41],"devices":[43],"in":[44],"the":[46,49,73,96,120,138],"first":[47],"third":[50],"quadrant":[51],"is":[52,86,142],"accurately":[53],"modeled":[54],"with":[55],"serval":[56],"compact":[57],"equations.":[58],"A":[59],"data":[61,107],"optimization":[63,93,100],"algorithm-based":[64],"parameter":[65,83],"extraction":[66],"have":[68],"been":[69,125,135],"proposed":[70,82,121,139],"to":[71,144],"replace":[72],"previous":[74],"time":[75],"consuming":[76],"labor":[78],"intensive":[79],"one.":[80],"fitting":[84],"algorithm":[85,89,94],"genetic":[88],"Levenberg\u2013Marquardt":[91],"combined":[92],"possessing":[95],"advantages":[97],"global":[99],"fast":[102],"convergence":[103],"speed,":[104],"can":[108],"come":[109],"from":[110],"datasheets":[112],"measurement.":[114],"correctness":[116],"accuracy":[118],"verified":[126],"by":[127],"simulation":[128],"experiment":[130],"result.":[131],"Meanwhile,":[132],"it":[133],"proved":[136],"that":[137],"applicable":[143],"several":[145],"commercially":[146],"available":[147],"SiC":[148],"s":[152],"GaN":[154],"HEMTs.":[155]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":7},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}