{"id":"https://openalex.org/W3031963677","doi":"https://doi.org/10.1109/tie.2020.2996132","title":"Comparison of the Effects of Nonlinearities for Si MOSFET and GaN E-HEMT Based VSIs","display_name":"Comparison of the Effects of Nonlinearities for Si MOSFET and GaN E-HEMT Based VSIs","publication_year":2020,"publication_date":"2020-05-27","ids":{"openalex":"https://openalex.org/W3031963677","doi":"https://doi.org/10.1109/tie.2020.2996132","mag":"3031963677"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2020.2996132","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2020.2996132","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5084559348","display_name":"Huseyin Yuruk","orcid":"https://orcid.org/0000-0002-8410-6878"},"institutions":[{"id":"https://openalex.org/I56303344","display_name":"Aselsan (Turkey)","ror":"https://ror.org/04knh8e66","country_code":"TR","type":"company","lineage":["https://openalex.org/I56303344"]}],"countries":["TR"],"is_corresponding":false,"raw_author_name":"Huseyin Yuruk","raw_affiliation_strings":["Aselsan Inc., Radar, EW Systems Vice Presidency, Ankara, Turkey","Aselsan Inc. Radar, EW Systems Vice Presidency, Ankara, Turkey"],"raw_orcid":"https://orcid.org/0000-0002-8410-6878","affiliations":[{"raw_affiliation_string":"Aselsan Inc., Radar, EW Systems Vice Presidency, Ankara, Turkey","institution_ids":["https://openalex.org/I56303344"]},{"raw_affiliation_string":"Aselsan Inc. Radar, EW Systems Vice Presidency, Ankara, Turkey","institution_ids":["https://openalex.org/I56303344"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041923224","display_name":"Ozan Keysan","orcid":"https://orcid.org/0000-0002-6311-7906"},"institutions":[{"id":"https://openalex.org/I201799495","display_name":"Middle East Technical University","ror":"https://ror.org/014weej12","country_code":"TR","type":"education","lineage":["https://openalex.org/I201799495"]}],"countries":["TR"],"is_corresponding":false,"raw_author_name":"Ozan Keysan","raw_affiliation_strings":["Department of Electrical and Electronics Engineering, Middle East Technical University, Ankara, Turkey","Department of Electrical and Electronics Engineering , Middle East Technical University , Ankara , Turkey"],"raw_orcid":"https://orcid.org/0000-0002-6311-7906","affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronics Engineering, Middle East Technical University, Ankara, Turkey","institution_ids":["https://openalex.org/I201799495"]},{"raw_affiliation_string":"Department of Electrical and Electronics Engineering , Middle East Technical University , Ankara , Turkey","institution_ids":["https://openalex.org/I201799495"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5053626231","display_name":"Baris Ulutas","orcid":"https://orcid.org/0000-0002-9310-1032"},"institutions":[{"id":"https://openalex.org/I56303344","display_name":"Aselsan (Turkey)","ror":"https://ror.org/04knh8e66","country_code":"TR","type":"company","lineage":["https://openalex.org/I56303344"]}],"countries":["TR"],"is_corresponding":false,"raw_author_name":"Baris Ulutas","raw_affiliation_strings":["Aselsan Inc., Radar, EW Systems Vice Presidency, Ankara, Turkey","Aselsan Inc. Radar, EW Systems Vice Presidency, Ankara, Turkey"],"raw_orcid":"https://orcid.org/0000-0002-9310-1032","affiliations":[{"raw_affiliation_string":"Aselsan Inc., Radar, EW Systems Vice Presidency, Ankara, Turkey","institution_ids":["https://openalex.org/I56303344"]},{"raw_affiliation_string":"Aselsan Inc. Radar, EW Systems Vice Presidency, Ankara, Turkey","institution_ids":["https://openalex.org/I56303344"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.8075,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.71683939,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"68","issue":"7","first_page":"5606","last_page":"5615"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.6273801922798157},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5779362320899963},{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.5537756085395813},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.544335663318634},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.505912721157074},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.47850242257118225},{"id":"https://openalex.org/keywords/harmonics","display_name":"Harmonics","score":0.4261646270751953},{"id":"https://openalex.org/keywords/inductance","display_name":"Inductance","score":0.4225509464740753},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4094647467136383},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3489765524864197},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3443452715873718},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.33020856976509094},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2183801531791687}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6273801922798157},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5779362320899963},{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.5537756085395813},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.544335663318634},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.505912721157074},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.47850242257118225},{"id":"https://openalex.org/C188414643","wikidata":"https://www.wikidata.org/wiki/Q3001183","display_name":"Harmonics","level":3,"score":0.4261646270751953},{"id":"https://openalex.org/C29210110","wikidata":"https://www.wikidata.org/wiki/Q177897","display_name":"Inductance","level":3,"score":0.4225509464740753},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4094647467136383},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3489765524864197},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3443452715873718},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.33020856976509094},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2183801531791687},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/tie.2020.2996132","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2020.2996132","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},{"id":"pmh:oai:https://open.metu.edu.tr:11511/90140","is_oa":false,"landing_page_url":"https://hdl.handle.net/11511/90140","pdf_url":null,"source":{"id":"https://openalex.org/S4306402495","display_name":"OpenMETU (Middle East Technical University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I201799495","host_organization_name":"Middle East Technical University","host_organization_lineage":["https://openalex.org/I201799495"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Journal Article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8799999952316284}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":33,"referenced_works":["https://openalex.org/W1543272806","https://openalex.org/W1901130958","https://openalex.org/W1943690645","https://openalex.org/W1991533273","https://openalex.org/W2010852397","https://openalex.org/W2098891187","https://openalex.org/W2142785957","https://openalex.org/W2155645544","https://openalex.org/W2167083062","https://openalex.org/W2245146378","https://openalex.org/W2463667938","https://openalex.org/W2556633638","https://openalex.org/W2569835169","https://openalex.org/W2580835476","https://openalex.org/W2584204300","https://openalex.org/W2588382193","https://openalex.org/W2614297070","https://openalex.org/W2616053776","https://openalex.org/W2624722470","https://openalex.org/W2719372686","https://openalex.org/W2739193810","https://openalex.org/W2742754955","https://openalex.org/W2744829680","https://openalex.org/W2797098828","https://openalex.org/W2807745431","https://openalex.org/W2851029239","https://openalex.org/W2897167653","https://openalex.org/W2899135298","https://openalex.org/W2905505566","https://openalex.org/W2908408985","https://openalex.org/W2979968019","https://openalex.org/W6632691415","https://openalex.org/W6719364526"],"related_works":["https://openalex.org/W4308644106","https://openalex.org/W2775582432","https://openalex.org/W2115067661","https://openalex.org/W2967675370","https://openalex.org/W2587610248","https://openalex.org/W2568972147","https://openalex.org/W2028696212","https://openalex.org/W2340740806","https://openalex.org/W2472160638","https://openalex.org/W3117917958"],"abstract_inverted_index":{"Nonlinearities":[0],"in":[1,38,41,46,79,146],"voltage":[2,14,33],"source":[3],"inverters":[4],"(VSIs)":[5],"such":[6],"as;":[7],"dead":[8],"time,":[9,11,13],"switching":[10],"delay":[12],"drops":[15],"on":[16,91,96],"the":[17,27,31,42,63,67,70,76,80,86,92,97,101,147,155],"power":[18],"switches,":[19],"parasitic":[20],"capacitance,":[21],"etc.,":[22],"are":[23,113,151],"considered":[24],"to":[25,140],"be":[26],"main":[28],"sources":[29],"of":[30,69,88,100],"output":[32,43],"distortions.":[34],"These":[35],"distortions":[36],"result":[37],"low-order":[39],"harmonics":[40],"current,":[44],"which":[45,181],"turn":[47],"increase":[48],"core":[49],"losses":[50],"and":[51,66,95,163],"create":[52],"torque":[53],"ripples.":[54],"In":[55,83],"particular,":[56],"for":[57,179],"low-speed":[58],"applications":[59],"with":[60,115],"low-inductance":[61],"motors,":[62],"control":[64,99,149],"performance":[65],"stability":[68],"system":[71,77],"degrades":[72],"substantially,":[73],"especially":[74],"when":[75],"operates":[78],"low-torque":[81],"region.":[82],"this":[84,142],"work,":[85],"effects":[87],"these":[89],"nonlinearities":[90],"phase":[93],"current":[94,98,148],"silicon":[102],"(Si)":[103],"metal":[104],"oxide":[105],"semiconductor":[106],"field":[107],"effect":[108],"transistor":[109,134],"(MOSFET)":[110],"based":[111,136,166,173],"VSI":[112,137,174],"investigated":[114],"an":[116],"air":[117],"cored":[118],"low":[119],"inductance":[120],"permanent":[121],"magnet":[122],"synchronous":[123],"motor.":[124],"Furthermore,":[125],"Gallium":[126],"nitride":[127],"(GaN)":[128],"enhancement":[129],"mode":[130],"high":[131,184],"electron":[132],"mobility":[133],"(E-HEMT)":[135],"is":[138,175],"proposed":[139],"overcome":[141],"problem.":[143],"Next,":[144],"improvements":[145],"process":[150],"demonstrated":[152],"by":[153,159],"comparing":[154],"experimental":[156],"results":[157],"obtained":[158],"using":[160],"GaN":[161,171],"E-HEMT":[162,172],"Si":[164],"MOSFET":[165],"VSIs.":[167],"Results":[168],"show":[169],"that":[170],"a":[176,183],"better":[177],"choice":[178],"applications,":[180],"require":[182],"bandwidth":[185],"control.":[186]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}