{"id":"https://openalex.org/W2971608237","doi":"https://doi.org/10.1109/tie.2019.2937053","title":"Event Driven Control of Voltage and Current Gradients of Medium Voltage IGBTs","display_name":"Event Driven Control of Voltage and Current Gradients of Medium Voltage IGBTs","publication_year":2019,"publication_date":"2019-09-03","ids":{"openalex":"https://openalex.org/W2971608237","doi":"https://doi.org/10.1109/tie.2019.2937053","mag":"2971608237"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2019.2937053","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2019.2937053","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5075787268","display_name":"J. Holtz","orcid":"https://orcid.org/0000-0001-6916-5792"},"institutions":[{"id":"https://openalex.org/I167360494","display_name":"University of Wuppertal","ror":"https://ror.org/00613ak93","country_code":"DE","type":"education","lineage":["https://openalex.org/I167360494"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Joachim Holtz","raw_affiliation_strings":["Electrical Machines and Drives Group, Wuppertal University, Wuppertal, Germany"],"raw_orcid":"https://orcid.org/0000-0001-6916-5792","affiliations":[{"raw_affiliation_string":"Electrical Machines and Drives Group, Wuppertal University, Wuppertal, Germany","institution_ids":["https://openalex.org/I167360494"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5075787268"],"corresponding_institution_ids":["https://openalex.org/I167360494"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.08305959,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":95},"biblio":{"volume":"67","issue":"8","first_page":"6323","last_page":"6330"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6821725368499756},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.6561723947525024},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5814709067344666},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.5429314374923706},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5343711972236633},{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.4939458966255188},{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.4869316816329956},{"id":"https://openalex.org/keywords/common-emitter","display_name":"Common emitter","score":0.4603412449359894},{"id":"https://openalex.org/keywords/switching-time","display_name":"Switching time","score":0.418532133102417},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4101336598396301},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3669961988925934},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2664029598236084},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2513021230697632}],"concepts":[{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6821725368499756},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.6561723947525024},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5814709067344666},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.5429314374923706},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5343711972236633},{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.4939458966255188},{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.4869316816329956},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.4603412449359894},{"id":"https://openalex.org/C199310435","wikidata":"https://www.wikidata.org/wiki/Q7659121","display_name":"Switching time","level":2,"score":0.418532133102417},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4101336598396301},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3669961988925934},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2664029598236084},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2513021230697632},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tie.2019.2937053","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2019.2937053","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8600000143051147,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W2020077843","https://openalex.org/W2062122772","https://openalex.org/W2105386821","https://openalex.org/W2118993984","https://openalex.org/W2129380951","https://openalex.org/W2144227881","https://openalex.org/W2155006994","https://openalex.org/W2358226877","https://openalex.org/W2571738965"],"related_works":["https://openalex.org/W2564193318","https://openalex.org/W2347268629","https://openalex.org/W1900689440","https://openalex.org/W3165795363","https://openalex.org/W2348060780","https://openalex.org/W3088879894","https://openalex.org/W2378831118","https://openalex.org/W2382314166","https://openalex.org/W2062551440","https://openalex.org/W2360370903"],"abstract_inverted_index":{"Medium":[0],"voltage":[1,20,67,175],"insulated":[2],"gate":[3,13,37,40,75,86],"bipolar":[4],"transistors":[5],"are":[6,28,42,94,116,142,177,183],"fast":[7],"switching":[8,25,52,72,181],"devices":[9],"that":[10,62,93,141],"require":[11],"low":[12],"drive":[14],"power.":[15],"They":[16],"inherently":[17],"generate":[18],"high":[19,51],"and":[21,68,96,150,174],"current":[22,69,135,173],"gradients":[23,70,149,176],"during":[24,71],"transitions.":[26,73],"These":[27,88,125],"generally":[29],"limited":[30],"by":[31,84],"retarding":[32],"the":[33,36,66,78,121,129,133,137,152,155,166,180],"changes":[34],"of":[35,77,132,168],"charge.":[38],"Additional":[39],"resistors":[41],"usually":[43],"installed":[44],"for":[45],"this":[46,60],"purpose.":[47],"The":[48,74,101],"drawback":[49],"is":[50,57,82],"losses.":[53],"A":[54],"novel":[55],"method":[56,102],"described":[58],"in":[59,98],"article":[61],"aims":[63],"at":[64],"controlling":[65],"charge":[76],"input":[79],"MOS":[80],"device":[81],"controlled":[83],"injected":[85],"currents.":[87],"follow":[89],"particular":[90],"command":[91,123],"functions":[92,126],"predefined":[95,148],"stored":[97],"a":[99],"memory.":[100],"requires":[103],"reacting":[104],"within":[105],"microseconds,":[106],"which":[107],"traditional":[108],"closed-loop":[109],"control":[110],"cannot":[111],"do.":[112],"Specific":[113],"time":[114,153],"events":[115],"therefore":[117],"defined":[118],"to":[119,158],"trigger":[120],"respective":[122,156],"function.":[124],"depend":[127],"on":[128],"instantaneous":[130],"values":[131],"collector":[134],"or":[136],"collector-emitter":[138],"voltage,":[139],"variables":[140],"identified":[143],"without":[144],"delay,":[145],"knowing":[146],"their":[147,160],"counting":[151],"from":[154],"event":[157,169],"reach":[159],"final":[161],"values.":[162],"Experimental":[163],"results":[164],"show":[165],"performance":[167],"driven":[170],"control.":[171],"Low":[172],"enforced":[178],"while":[179],"losses":[182],"reduced.":[184]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}