{"id":"https://openalex.org/W2884312938","doi":"https://doi.org/10.1109/tie.2018.2854568","title":"The Temperature Dependence of the Flatband Voltage in High-Power IGBTs","display_name":"The Temperature Dependence of the Flatband Voltage in High-Power IGBTs","publication_year":2018,"publication_date":"2018-07-16","ids":{"openalex":"https://openalex.org/W2884312938","doi":"https://doi.org/10.1109/tie.2018.2854568","mag":"2884312938"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2018.2854568","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2018.2854568","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://vbn.aau.dk/ws/files/295612172/Flatband.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021726666","display_name":"Nick Baker","orcid":"https://orcid.org/0000-0003-2599-9386"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":true,"raw_author_name":"Nick Baker","raw_affiliation_strings":["Aalborg University, Aalborg, Denmark"],"raw_orcid":"https://orcid.org/0000-0003-2599-9386","affiliations":[{"raw_affiliation_string":"Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5008783393","display_name":"Francesco Iannuzzo","orcid":"https://orcid.org/0000-0003-3949-2172"},"institutions":[{"id":"https://openalex.org/I186995768","display_name":"Universit\u00e0 degli studi di Cassino e del Lazio Meridionale","ror":"https://ror.org/04nxkaq16","country_code":"IT","type":"education","lineage":["https://openalex.org/I186995768"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Francesco Iannuzzo","raw_affiliation_strings":["Dipartimento di Ingegneria Elettrica e dell'Informazione (DIEI), University of Cassino and Southern Lazio, Cassino (FR), Italy"],"raw_orcid":"https://orcid.org/0000-0003-3949-2172","affiliations":[{"raw_affiliation_string":"Dipartimento di Ingegneria Elettrica e dell'Informazione (DIEI), University of Cassino and Southern Lazio, Cassino (FR), Italy","institution_ids":["https://openalex.org/I186995768"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5021726666"],"corresponding_institution_ids":["https://openalex.org/I891191580"],"apc_list":null,"apc_paid":null,"fwci":1.9633,"has_fulltext":true,"cited_by_count":37,"citation_normalized_percentile":{"value":0.87077772,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"66","issue":"7","first_page":"5581","last_page":"5584"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12898","display_name":"Induction Heating and Inverter Technology","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2210","display_name":"Mechanical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6285251975059509},{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.6143189668655396},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.538888692855835},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5151494741439819},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.49942708015441895},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4319222867488861},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.3609451651573181},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21189194917678833},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20442843437194824},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.13273879885673523}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6285251975059509},{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.6143189668655396},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.538888692855835},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5151494741439819},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.49942708015441895},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4319222867488861},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3609451651573181},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21189194917678833},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20442843437194824},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.13273879885673523}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/tie.2018.2854568","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2018.2854568","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},{"id":"pmh:oai:pure.atira.dk:openaire/8294c994-c771-460a-8b56-f926ffc66cb3","is_oa":true,"landing_page_url":"https://vbn.aau.dk/da/publications/8294c994-c771-460a-8b56-f926ffc66cb3","pdf_url":"https://vbn.aau.dk/ws/files/295612172/Flatband.pdf","source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Baker, N R & Iannuzzo, F 2019, 'The Temperature Dependence of the Flatband Voltage in High Power IGBTs', IEEE Transactions on Industrial Electronics, vol. 66, no. 7, 8411445, pp. 5581 - 5584. https://doi.org/10.1109/TIE.2018.2854568","raw_type":"info:eu-repo/semantics/publishedVersion"},{"id":"pmh:oai:pure.atira.dk:publications/8294c994-c771-460a-8b56-f926ffc66cb3","is_oa":true,"landing_page_url":"http://www.scopus.com/inward/record.url?scp=85049958196&partnerID=8YFLogxK","pdf_url":null,"source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Baker , N R & Iannuzzo , F 2019 , ' The Temperature Dependence of the Flatband Voltage in High Power IGBTs ' , IEEE Transactions on Industrial Electronics , vol. 66 , no. 7 , 8411445 , pp. 5581 - 5584 . https://doi.org/10.1109/TIE.2018.2854568","raw_type":"article"}],"best_oa_location":{"id":"pmh:oai:pure.atira.dk:openaire/8294c994-c771-460a-8b56-f926ffc66cb3","is_oa":true,"landing_page_url":"https://vbn.aau.dk/da/publications/8294c994-c771-460a-8b56-f926ffc66cb3","pdf_url":"https://vbn.aau.dk/ws/files/295612172/Flatband.pdf","source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Baker, N R & Iannuzzo, F 2019, 'The Temperature Dependence of the Flatband Voltage in High Power IGBTs', IEEE Transactions on Industrial Electronics, vol. 66, no. 7, 8411445, pp. 5581 - 5584. https://doi.org/10.1109/TIE.2018.2854568","raw_type":"info:eu-repo/semantics/publishedVersion"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8500000238418579,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2884312938.pdf","grobid_xml":"https://content.openalex.org/works/W2884312938.grobid-xml"},"referenced_works_count":22,"referenced_works":["https://openalex.org/W113432978","https://openalex.org/W324409780","https://openalex.org/W1958578716","https://openalex.org/W1977775545","https://openalex.org/W1999281762","https://openalex.org/W2001593769","https://openalex.org/W2026012753","https://openalex.org/W2051845716","https://openalex.org/W2117661403","https://openalex.org/W2130783453","https://openalex.org/W2160272210","https://openalex.org/W2165283591","https://openalex.org/W2202635820","https://openalex.org/W2205144585","https://openalex.org/W2248408487","https://openalex.org/W2287880634","https://openalex.org/W2321644402","https://openalex.org/W2742407185","https://openalex.org/W2752905841","https://openalex.org/W6679289484","https://openalex.org/W6687908503","https://openalex.org/W7033413021"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2318746575","https://openalex.org/W3164416905","https://openalex.org/W2394855236","https://openalex.org/W2385832380","https://openalex.org/W2060044332","https://openalex.org/W2380046073","https://openalex.org/W2320548181","https://openalex.org/W2146642246","https://openalex.org/W2162081524"],"abstract_inverted_index":{"This":[0,68],"letter":[1,69],"experimentally":[2],"demonstrates":[3],"the":[4,8,22,42,53],"temperature":[5,38,47,58,63],"dependence":[6,48],"of":[7,36,45,55],"flatband":[9],"voltage":[10,20],"(VFB)":[11],"in":[12],"high-power":[13],"insulated-gate":[14],"bipolar":[15],"transistors":[16],"(IGBTs).":[17],"The":[18],"gate":[19],"during":[21],"turn-on":[23],"delay":[24],"is":[25],"shown":[26],"to":[27,30,52],"fluctuate":[28],"up":[29],"5":[31],"mV/\u00b0C":[32],"as":[33,49,62,86],"a":[34,87],"result":[35],"this":[37,46],"dependence.":[39],"We":[40],"investigate":[41],"practical":[43],"use":[44,85],"an":[50],"addition":[51],"genre":[54],"IGBT":[56],"junction":[57],"measurement":[59,74],"methods":[60],"known":[61],"sensitive":[64],"electrical":[65],"parameters":[66],"(TSEPs).":[67],"will":[70],"outline":[71],"some":[72],"possible":[73],"circuits":[75],"and":[76],"highlight":[77],"issues":[78],"with":[79],"VFB":[80],"that":[81],"may":[82],"make":[83],"its":[84],"TSEP":[88],"problematic.":[89]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":6},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":9},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}