{"id":"https://openalex.org/W2755545256","doi":"https://doi.org/10.1109/tie.2017.2752142","title":"Validation of Lifetime Prediction of IGBT Modules Based on Linear Damage Accumulation by Means of Superimposed Power Cycling Tests","display_name":"Validation of Lifetime Prediction of IGBT Modules Based on Linear Damage Accumulation by Means of Superimposed Power Cycling Tests","publication_year":2017,"publication_date":"2017-09-13","ids":{"openalex":"https://openalex.org/W2755545256","doi":"https://doi.org/10.1109/tie.2017.2752142","mag":"2755545256"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2017.2752142","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2752142","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5040983117","display_name":"Ui\u2010Min Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":true,"raw_author_name":"Ui-Min Choi","raw_affiliation_strings":["Center of Reliable Power Electronics, Aalborg University, Aalborg, Denmark"],"raw_orcid":"https://orcid.org/0000-0002-6164-3208","affiliations":[{"raw_affiliation_string":"Center of Reliable Power Electronics, Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029142853","display_name":"Ke Ma","orcid":"https://orcid.org/0000-0002-8154-4354"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ke Ma","raw_affiliation_strings":["School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5039395705","display_name":"Frede Blaabjerg","orcid":"https://orcid.org/0000-0001-8311-7412"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Frede Blaabjerg","raw_affiliation_strings":["Center of Reliable Power Electronics, Aalborg University, Aalborg, Denmark"],"raw_orcid":"https://orcid.org/0000-0001-8311-7412","affiliations":[{"raw_affiliation_string":"Center of Reliable Power Electronics, Aalborg University, Aalborg, Denmark","institution_ids":["https://openalex.org/I891191580"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5040983117"],"corresponding_institution_ids":["https://openalex.org/I891191580"],"apc_list":null,"apc_paid":null,"fwci":4.6755,"has_fulltext":false,"cited_by_count":85,"citation_normalized_percentile":{"value":0.95418556,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":96,"max":99},"biblio":{"volume":"65","issue":"4","first_page":"3520","last_page":"3529"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9973999857902527,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/power-cycling","display_name":"Power cycling","score":0.9182468056678772},{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.8663245439529419},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"Junction temperature","score":0.7840913534164429},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.6617971658706665},{"id":"https://openalex.org/keywords/converters","display_name":"Converters","score":0.5786118507385254},{"id":"https://openalex.org/keywords/swing","display_name":"Swing","score":0.4825969934463501},{"id":"https://openalex.org/keywords/cycling","display_name":"Cycling","score":0.47093406319618225},{"id":"https://openalex.org/keywords/power-module","display_name":"Power module","score":0.45816949009895325},{"id":"https://openalex.org/keywords/temperature-cycling","display_name":"Temperature cycling","score":0.42193326354026794},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39086565375328064},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3305594027042389},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3234030604362488},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2942195534706116},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2773250341415405},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.22904294729232788},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.12050944566726685}],"concepts":[{"id":"https://openalex.org/C2777900271","wikidata":"https://www.wikidata.org/wiki/Q17105337","display_name":"Power cycling","level":4,"score":0.9182468056678772},{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.8663245439529419},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.7840913534164429},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.6617971658706665},{"id":"https://openalex.org/C2778422915","wikidata":"https://www.wikidata.org/wiki/Q10302051","display_name":"Converters","level":3,"score":0.5786118507385254},{"id":"https://openalex.org/C65655974","wikidata":"https://www.wikidata.org/wiki/Q14867674","display_name":"Swing","level":2,"score":0.4825969934463501},{"id":"https://openalex.org/C541528975","wikidata":"https://www.wikidata.org/wiki/Q53121","display_name":"Cycling","level":2,"score":0.47093406319618225},{"id":"https://openalex.org/C141812795","wikidata":"https://www.wikidata.org/wiki/Q7236534","display_name":"Power module","level":3,"score":0.45816949009895325},{"id":"https://openalex.org/C177564732","wikidata":"https://www.wikidata.org/wiki/Q7698333","display_name":"Temperature cycling","level":3,"score":0.42193326354026794},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39086565375328064},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3305594027042389},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3234030604362488},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2942195534706116},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2773250341415405},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.22904294729232788},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.12050944566726685},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C95457728","wikidata":"https://www.wikidata.org/wiki/Q309","display_name":"History","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.0},{"id":"https://openalex.org/C166957645","wikidata":"https://www.wikidata.org/wiki/Q23498","display_name":"Archaeology","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/tie.2017.2752142","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2752142","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},{"id":"pmh:oai:pure.atira.dk:publications/d80e9554-04ec-4c41-b904-901204e9464b","is_oa":false,"landing_page_url":"http://www.scopus.com/inward/record.url?scp=85030223244&partnerID=8YFLogxK","pdf_url":null,"source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Choi , U-M , Ma , K & Blaabjerg , F 2018 , ' Validation of Lifetime Prediction of IGBT Modules Based on Linear Damage Accumulation by Means of Superimposed Power Cycling Tests ' , I E E E Transactions on Industrial Electronics , vol. 65 , no. 4 , 8036253 , pp. 3520-3529 . https://doi.org/10.1109/TIE.2017.2752142","raw_type":"article"},{"id":"pmh:oai:pure.atira.dk:publications/d80e9554-04ec-4c41-b904-901204e9464b","is_oa":false,"landing_page_url":"https://vbn.aau.dk/da/publications/d80e9554-04ec-4c41-b904-901204e9464b","pdf_url":null,"source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Choi, U-M, Ma, K & Blaabjerg, F 2018, 'Validation of Lifetime Prediction of IGBT Modules Based on Linear Damage Accumulation by Means of Superimposed Power Cycling Tests', I E E E Transactions on Industrial Electronics, vol. 65, no. 4, 8036253, pp. 3520-3529. https://doi.org/10.1109/TIE.2017.2752142","raw_type":"info:eu-repo/semantics/publishedVersion"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8100000023841858,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":27,"referenced_works":["https://openalex.org/W1494927951","https://openalex.org/W1559509074","https://openalex.org/W1956149423","https://openalex.org/W1976162664","https://openalex.org/W1982574138","https://openalex.org/W1985569381","https://openalex.org/W2002071358","https://openalex.org/W2003751225","https://openalex.org/W2024878069","https://openalex.org/W2027145618","https://openalex.org/W2049002156","https://openalex.org/W2071760299","https://openalex.org/W2107470485","https://openalex.org/W2111176322","https://openalex.org/W2146819726","https://openalex.org/W2150763729","https://openalex.org/W2153011453","https://openalex.org/W2162827174","https://openalex.org/W2167320299","https://openalex.org/W2193374437","https://openalex.org/W2306830135","https://openalex.org/W2321308786","https://openalex.org/W2486009244","https://openalex.org/W2519935534","https://openalex.org/W2559456120","https://openalex.org/W2573723467","https://openalex.org/W6633492549"],"related_works":["https://openalex.org/W4301809627","https://openalex.org/W4317382130","https://openalex.org/W1483223816","https://openalex.org/W2614113173","https://openalex.org/W2573723467","https://openalex.org/W2064880376","https://openalex.org/W2026438159","https://openalex.org/W4316660908","https://openalex.org/W3194407794","https://openalex.org/W4388199707"],"abstract_inverted_index":{"In":[0],"this":[1,37],"paper,":[2,38],"the":[3,12,92,96,101,107,111,115,119,123,126,133],"lifetime":[4,44,93,113,116,134],"prediction":[5,94,135],"of":[6,24,65,95,125,136],"power":[7,27,61,78,84,140],"device":[8],"modules":[9,98,138],"based":[10,41,58,99],"on":[11,42,59,100],"linear":[13,102],"damage":[14,103],"accumulation":[15,104],"is":[16],"studied":[17],"in":[18,36,46],"conjunction":[19],"with":[20,110],"simple":[21,33],"mission":[22,34],"profiles":[23,35],"converters.":[25],"Superimposed":[26],"cycling":[28,62,79,85],"conditions,":[29],"which":[30],"are":[31,39,73],"called":[32],"made":[40],"a":[43],"model":[45,54],"respect":[47],"to":[48],"junction":[49,127],"temperature":[50,128],"swing":[51,129],"duration.":[52],"This":[53],"has":[55],"been":[56],"built":[57],"39":[60],"test":[63,86,108,120],"results":[64,90,109,121],"600-V":[66],"30-A":[67],"three-phase-molded":[68],"IGBT":[69,97,137],"modules.":[70],"Six":[71],"tests":[72],"performed":[74],"under":[75,139],"three":[76],"superimposed":[77],"conditions":[80],"using":[81],"an":[82],"advanced":[83],"setup.":[87],"The":[88],"experimental":[89],"validate":[91],"by":[105],"comparing":[106],"predicted":[112],"from":[114],"model.":[117],"Furthermore,":[118],"show":[122],"importance":[124],"duration":[130],"effect":[131],"for":[132],"converter":[141],"applications.":[142]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":10},{"year":2024,"cited_by_count":14},{"year":2023,"cited_by_count":10},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":13},{"year":2020,"cited_by_count":14},{"year":2019,"cited_by_count":12},{"year":2018,"cited_by_count":6}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}