{"id":"https://openalex.org/W2750430585","doi":"https://doi.org/10.1109/tie.2017.2745465","title":"A High-Temperature Gate Driver for Silicon Carbide <sc>mosfet</sc>","display_name":"A High-Temperature Gate Driver for Silicon Carbide <sc>mosfet</sc>","publication_year":2017,"publication_date":"2017-08-25","ids":{"openalex":"https://openalex.org/W2750430585","doi":"https://doi.org/10.1109/tie.2017.2745465","mag":"2750430585"},"language":"ja","primary_location":{"id":"doi:10.1109/tie.2017.2745465","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2745465","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5045174475","display_name":"Parthasarathy Nayak","orcid":"https://orcid.org/0000-0003-3403-2812"},"institutions":[{"id":"https://openalex.org/I44461941","display_name":"University of Houston","ror":"https://ror.org/048sx0r50","country_code":"US","type":"education","lineage":["https://openalex.org/I44461941"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Parthasarathy Nayak","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Houston, Houston, TX, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Houston, Houston, TX, USA","institution_ids":["https://openalex.org/I44461941"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080884112","display_name":"Sumit Pramanick","orcid":"https://orcid.org/0000-0002-7797-2145"},"institutions":[{"id":"https://openalex.org/I44461941","display_name":"University of Houston","ror":"https://ror.org/048sx0r50","country_code":"US","type":"education","lineage":["https://openalex.org/I44461941"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sumit Kumar Pramanick","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Houston, Houston, TX, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Houston, Houston, TX, USA","institution_ids":["https://openalex.org/I44461941"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5073720759","display_name":"Kaushik Rajashekara","orcid":"https://orcid.org/0000-0001-8839-4187"},"institutions":[{"id":"https://openalex.org/I44461941","display_name":"University of Houston","ror":"https://ror.org/048sx0r50","country_code":"US","type":"education","lineage":["https://openalex.org/I44461941"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kaushik Rajashekara","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Houston, Houston, TX, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Houston, Houston, TX, USA","institution_ids":["https://openalex.org/I44461941"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5045174475"],"corresponding_institution_ids":["https://openalex.org/I44461941"],"apc_list":null,"apc_paid":null,"fwci":3.0102,"has_fulltext":false,"cited_by_count":34,"citation_normalized_percentile":{"value":0.9193882,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"65","issue":"3","first_page":"1955","last_page":"1964"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.8281964659690857},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6294112205505371},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6282087564468384},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.550510823726654},{"id":"https://openalex.org/keywords/overcurrent","display_name":"Overcurrent","score":0.5490541458129883},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.5168526768684387},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.5071921348571777},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4744911193847656},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4483385384082794},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.44390761852264404},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"Junction temperature","score":0.4112159311771393},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.38962820172309875},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.36524638533592224},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2641015648841858},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.15619274973869324},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.09508633613586426},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.056500256061553955}],"concepts":[{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.8281964659690857},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6294112205505371},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6282087564468384},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.550510823726654},{"id":"https://openalex.org/C47949032","wikidata":"https://www.wikidata.org/wiki/Q663542","display_name":"Overcurrent","level":3,"score":0.5490541458129883},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5168526768684387},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.5071921348571777},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4744911193847656},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4483385384082794},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.44390761852264404},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.4112159311771393},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38962820172309875},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36524638533592224},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2641015648841858},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.15619274973869324},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09508633613586426},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.056500256061553955},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tie.2017.2745465","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2745465","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.4300000071525574,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1917413680","https://openalex.org/W1967738299","https://openalex.org/W1970278082","https://openalex.org/W1978821660","https://openalex.org/W1991073559","https://openalex.org/W2008316743","https://openalex.org/W2066211048","https://openalex.org/W2090337035","https://openalex.org/W2097550317","https://openalex.org/W2098123253","https://openalex.org/W2119418964","https://openalex.org/W2132832671","https://openalex.org/W2134287996","https://openalex.org/W2152012503","https://openalex.org/W2152677897","https://openalex.org/W2168591197","https://openalex.org/W2294305164","https://openalex.org/W2326391435","https://openalex.org/W2344902552","https://openalex.org/W2407942920","https://openalex.org/W2534763128","https://openalex.org/W2544766964","https://openalex.org/W6674766605"],"related_works":["https://openalex.org/W2992873428","https://openalex.org/W2104118485","https://openalex.org/W2132832671","https://openalex.org/W2326245339","https://openalex.org/W1897050617","https://openalex.org/W2095756218","https://openalex.org/W2894912239","https://openalex.org/W1900358676","https://openalex.org/W1500216205","https://openalex.org/W2951185825"],"abstract_inverted_index":{"SiC":[0,24],"MOSFET":[1,25],"can":[2],"operate":[3],"at":[4,50,129],"a":[5,37,57],"junction":[6],"temperature":[7,132],"of":[8,23,69,89,112,133],"200-250":[9],"\u00b0C":[10],"due":[11],"to":[12,81],"its":[13],"improved":[14],"material":[15],"properties":[16],"and":[17,46,60,73,98,124],"thermal":[18],"stability.":[19],"However,":[20],"successful":[21],"realization":[22],"based":[26,104],"high-temperature":[27],"(HT)":[28],"converter":[29],"requires":[30],"HT":[31,39,83,92,105,114],"gate":[32,40,54,74,84,93,106,115],"drivers.":[33,85],"This":[34],"paper":[35],"presents":[36],"low-cost":[38],"driver":[41,55,94,107,116],"developed":[42,91],"with":[43],"discrete":[44,96],"transistors":[45],"signal":[47],"diodes":[48],"rated":[49],"180-200":[51],"\u00b0C.":[52,135],"The":[53,66,110],"has":[56],"robust":[58],"overcurrent":[59],"undervoltage":[61],"lock":[62],"out":[63],"protection":[64,71],"circuit.":[65],"propagation":[67],"delay":[68],"the":[70,90,99,113],"circuit":[72,76],"driving":[75],"is":[77,108,117],"greatly":[78],"reduced":[79],"compared":[80],"commercial":[82],"A":[86],"comparative":[87],"analysis":[88],"using":[95],"components":[97],"commercially":[100],"available":[101],"silicon-on-insulator":[102],"technology":[103],"presented.":[109],"performance":[111],"evaluated":[118],"for":[119],"both":[120],"hard":[121],"switched":[122],"fault":[123,125],"under":[126],"load":[127],"condition":[128],"an":[130],"ambient":[131],"180":[134]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":9},{"year":2018,"cited_by_count":6},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}