{"id":"https://openalex.org/W2750511420","doi":"https://doi.org/10.1109/tie.2017.2745442","title":"Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules","display_name":"Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules","publication_year":2017,"publication_date":"2017-08-25","ids":{"openalex":"https://openalex.org/W2750511420","doi":"https://doi.org/10.1109/tie.2017.2745442","mag":"2750511420"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2017.2745442","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2745442","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://vbn.aau.dk/ws/files/295464592/Final_submitted.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086905432","display_name":"Haoze Luo","orcid":"https://orcid.org/0000-0001-5103-5068"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Haoze Luo","raw_affiliation_strings":["College of Electrical Engineering, Zhejiang University, Hangzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electrical Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Wuhua Li","orcid":"https://orcid.org/0000-0001-5103-5068"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wuhua Li","raw_affiliation_strings":["College of Electrical Engineering, Zhejiang University, Hangzhou, China"],"raw_orcid":"https://orcid.org/0000-0001-5103-5068","affiliations":[{"raw_affiliation_string":"College of Electrical Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008783393","display_name":"Francesco Iannuzzo","orcid":"https://orcid.org/0000-0003-3949-2172"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Francesco Iannuzzo","raw_affiliation_strings":["Energy Technology Department, Aalborg University, Aalborg East, Denmark"],"raw_orcid":"https://orcid.org/0000-0003-3949-2172","affiliations":[{"raw_affiliation_string":"Energy Technology Department, Aalborg University, Aalborg East, Denmark","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082049172","display_name":"Xiangning He","orcid":"https://orcid.org/0000-0002-0953-0097"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiangning He","raw_affiliation_strings":["College of Electrical Engineering, Zhejiang University, Hangzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electrical Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5039395705","display_name":"Frede Blaabjerg","orcid":"https://orcid.org/0000-0001-8311-7412"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Frede Blaabjerg","raw_affiliation_strings":["Energy Technology Department, Aalborg University, Aalborg East, Denmark"],"raw_orcid":"https://orcid.org/0000-0001-8311-7412","affiliations":[{"raw_affiliation_string":"Energy Technology Department, Aalborg University, Aalborg East, Denmark","institution_ids":["https://openalex.org/I891191580"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5086905432"],"corresponding_institution_ids":["https://openalex.org/I76130692"],"apc_list":null,"apc_paid":null,"fwci":4.2372,"has_fulltext":true,"cited_by_count":78,"citation_normalized_percentile":{"value":0.94717466,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"65","issue":"6","first_page":"4724","last_page":"4738"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.8710081577301025},{"id":"https://openalex.org/keywords/inductance","display_name":"Inductance","score":0.683593213558197},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.6098387241363525},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"Junction temperature","score":0.5754803419113159},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5349107384681702},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5313853621482849},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.5215916037559509},{"id":"https://openalex.org/keywords/power-module","display_name":"Power module","score":0.4983341693878174},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4616061747074127},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.44363880157470703},{"id":"https://openalex.org/keywords/common-emitter","display_name":"Common emitter","score":0.41054025292396545},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3907369077205658},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3714723587036133},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.29347705841064453},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20644840598106384}],"concepts":[{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.8710081577301025},{"id":"https://openalex.org/C29210110","wikidata":"https://www.wikidata.org/wiki/Q177897","display_name":"Inductance","level":3,"score":0.683593213558197},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.6098387241363525},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.5754803419113159},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5349107384681702},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5313853621482849},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.5215916037559509},{"id":"https://openalex.org/C141812795","wikidata":"https://www.wikidata.org/wiki/Q7236534","display_name":"Power module","level":3,"score":0.4983341693878174},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4616061747074127},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.44363880157470703},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.41054025292396545},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3907369077205658},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3714723587036133},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.29347705841064453},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20644840598106384},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/tie.2017.2745442","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2745442","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},{"id":"pmh:oai:pure.atira.dk:publications/5a4b60d8-1876-4c6c-9349-45a45380224e","is_oa":true,"landing_page_url":"https://vbn.aau.dk/da/publications/5a4b60d8-1876-4c6c-9349-45a45380224e","pdf_url":"https://vbn.aau.dk/ws/files/295464592/Final_submitted.pdf","source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Luo, H, Li, W, Iannuzzo, F, He, X & Blaabjerg, F 2018, 'Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules', I E E E Transactions on Industrial Electronics, vol. 65, no. 6, pp. 4724-4738. https://doi.org/10.1109/TIE.2017.2745442","raw_type":"info:eu-repo/semantics/publishedVersion"},{"id":"pmh:oai:pure.atira.dk:publications/5a4b60d8-1876-4c6c-9349-45a45380224e","is_oa":true,"landing_page_url":"http://www.scopus.com/inward/record.url?scp=85028552070&partnerID=8YFLogxK","pdf_url":null,"source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Luo , H , Li , W , Iannuzzo , F , He , X &amp; Blaabjerg , F 2018 , ' Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules ' , I E E E Transactions on Industrial Electronics , vol. 65 , no. 6 , pp. 4724-4738 . https://doi.org/10.1109/TIE.2017.2745442","raw_type":"article"}],"best_oa_location":{"id":"pmh:oai:pure.atira.dk:publications/5a4b60d8-1876-4c6c-9349-45a45380224e","is_oa":true,"landing_page_url":"https://vbn.aau.dk/da/publications/5a4b60d8-1876-4c6c-9349-45a45380224e","pdf_url":"https://vbn.aau.dk/ws/files/295464592/Final_submitted.pdf","source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Luo, H, Li, W, Iannuzzo, F, He, X & Blaabjerg, F 2018, 'Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules', I E E E Transactions on Industrial Electronics, vol. 65, no. 6, pp. 4724-4738. https://doi.org/10.1109/TIE.2017.2745442","raw_type":"info:eu-repo/semantics/publishedVersion"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.75,"id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G11016865","display_name":null,"funder_award_id":"2014CB247400","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"}],"funders":[{"id":"https://openalex.org/F4320335777","display_name":"National Key Research and Development Program of China","ror":null}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2750511420.pdf","grobid_xml":"https://content.openalex.org/works/W2750511420.grobid-xml"},"referenced_works_count":44,"referenced_works":["https://openalex.org/W1012933064","https://openalex.org/W1494927951","https://openalex.org/W1539477990","https://openalex.org/W1641947315","https://openalex.org/W1964091357","https://openalex.org/W1968039467","https://openalex.org/W1984518137","https://openalex.org/W1994465562","https://openalex.org/W2004731663","https://openalex.org/W2012936154","https://openalex.org/W2026012753","https://openalex.org/W2028810166","https://openalex.org/W2029699094","https://openalex.org/W2042575274","https://openalex.org/W2051845716","https://openalex.org/W2055909021","https://openalex.org/W2073386831","https://openalex.org/W2078825375","https://openalex.org/W2089570935","https://openalex.org/W2094961504","https://openalex.org/W2102547242","https://openalex.org/W2127100446","https://openalex.org/W2130783453","https://openalex.org/W2138750320","https://openalex.org/W2175982826","https://openalex.org/W2193374437","https://openalex.org/W2197739317","https://openalex.org/W2205144585","https://openalex.org/W2219051845","https://openalex.org/W2287880634","https://openalex.org/W2289714974","https://openalex.org/W2296114699","https://openalex.org/W2302561359","https://openalex.org/W2321308786","https://openalex.org/W2400122100","https://openalex.org/W2433213435","https://openalex.org/W2468659224","https://openalex.org/W2580273736","https://openalex.org/W2588164626","https://openalex.org/W2588757137","https://openalex.org/W2728946701","https://openalex.org/W6626469299","https://openalex.org/W6679289484","https://openalex.org/W6696766812"],"related_works":["https://openalex.org/W4405201905","https://openalex.org/W2941586664","https://openalex.org/W2026438159","https://openalex.org/W2952153532","https://openalex.org/W2894661039","https://openalex.org/W2973352049","https://openalex.org/W4388199707","https://openalex.org/W1483223816","https://openalex.org/W4316660908","https://openalex.org/W3194407794"],"abstract_inverted_index":{"This":[0],"paper":[1],"proposes":[2],"the":[3,6,51,54,58,76],"adoption":[4],"of":[5,33,57],"inherent":[7],"emitter":[8],"stray":[9],"inductance":[10],"L":[11],"<sub":[12],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[13],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">eE</sub>":[14],"in":[15,44],"high-power":[16,66],"insulated":[17],"gate":[18],"bipolar":[19],"transistor":[20],"modules":[21],"as":[22],"a":[23,31],"new":[24],"dynamic":[25,36],"thermosensitive":[26],"electrical":[27],"parameter":[28],"(d-TSEP).":[29],"Furthermore,":[30],"family":[32],"14":[34],"derived":[35],"TSEP":[37],"candidates":[38],"has":[39],"been":[40],"extracted":[41],"and":[42,47,53,63,71],"classified":[43],"voltage-based,":[45],"time-based":[46],"charge-based":[48],"TSEPs.":[49],"Accordingly,":[50],"perspectives":[52],"implementation":[55],"challenges":[56],"proposed":[59],"method":[60],"are":[61,69],"discussed":[62],"summarized.":[64],"Finally,":[65],"test":[67],"platforms":[68],"designed":[70],"adopted":[72],"to":[73],"experimentally":[74],"verify":[75],"theoretical":[77],"analysis.":[78]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":11},{"year":2024,"cited_by_count":14},{"year":2023,"cited_by_count":8},{"year":2022,"cited_by_count":6},{"year":2021,"cited_by_count":8},{"year":2020,"cited_by_count":14},{"year":2019,"cited_by_count":9},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}