{"id":"https://openalex.org/W2742154261","doi":"https://doi.org/10.1109/tie.2017.2733483","title":"Comparison of SiC Voltage Source Inverters Using Synchronous Rectification and Freewheeling Diode","display_name":"Comparison of SiC Voltage Source Inverters Using Synchronous Rectification and Freewheeling Diode","publication_year":2017,"publication_date":"2017-07-31","ids":{"openalex":"https://openalex.org/W2742154261","doi":"https://doi.org/10.1109/tie.2017.2733483","mag":"2742154261"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2017.2733483","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2733483","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5020348343","display_name":"Shan Yin","orcid":"https://orcid.org/0000-0002-4874-4135"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]},{"id":"https://openalex.org/I2801345734","display_name":"China Academy of Engineering Physics","ror":"https://ror.org/039vqpp67","country_code":"CN","type":"facility","lineage":["https://openalex.org/I2801345734"]}],"countries":["CN","SG"],"is_corresponding":false,"raw_author_name":"Shan Yin","raw_affiliation_strings":["Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China","Rolls-Royce@NTU Corporate Lab, Nanyang Technological University, Singapore"],"raw_orcid":"https://orcid.org/0000-0002-4874-4135","affiliations":[{"raw_affiliation_string":"Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China","institution_ids":["https://openalex.org/I2801345734"]},{"raw_affiliation_string":"Rolls-Royce@NTU Corporate Lab, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004252663","display_name":"Yitao Liu","orcid":"https://orcid.org/0000-0002-0604-9601"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]},{"id":"https://openalex.org/I180726961","display_name":"Shenzhen University","ror":"https://ror.org/01vy4gh70","country_code":"CN","type":"education","lineage":["https://openalex.org/I180726961"]}],"countries":["CN","SG"],"is_corresponding":false,"raw_author_name":"Yitao Liu","raw_affiliation_strings":["College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, China","Rolls-Royce@NTU Corporate Lab, Nanyang Technological University, Singapore","School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"raw_orcid":"https://orcid.org/0000-0002-0604-9601","affiliations":[{"raw_affiliation_string":"College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, China","institution_ids":["https://openalex.org/I180726961"]},{"raw_affiliation_string":"Rolls-Royce@NTU Corporate Lab, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101760252","display_name":"Yong Liu","orcid":"https://orcid.org/0000-0003-4716-8962"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]},{"id":"https://openalex.org/I180726961","display_name":"Shenzhen University","ror":"https://ror.org/01vy4gh70","country_code":"CN","type":"education","lineage":["https://openalex.org/I180726961"]}],"countries":["CN","SG"],"is_corresponding":false,"raw_author_name":"Yong Liu","raw_affiliation_strings":["College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, China","Rolls-Royce@NTU Corporate Lab, Nanyang Technological University, Singapore","School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"raw_orcid":"https://orcid.org/0000-0003-4716-8962","affiliations":[{"raw_affiliation_string":"College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, China","institution_ids":["https://openalex.org/I180726961"]},{"raw_affiliation_string":"Rolls-Royce@NTU Corporate Lab, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002774644","display_name":"King Jet Tseng","orcid":"https://orcid.org/0000-0002-5069-080X"},"institutions":[{"id":"https://openalex.org/I168639165","display_name":"Singapore Institute of Technology","ror":"https://ror.org/01v2c2791","country_code":"SG","type":"education","lineage":["https://openalex.org/I168639165"]},{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"King Jet Tseng","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","Singapore Institute of Technology, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"Singapore Institute of Technology, Singapore","institution_ids":["https://openalex.org/I168639165"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002357319","display_name":"Josep Pou","orcid":"https://orcid.org/0000-0002-3114-781X"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Josep Pou","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5008007000","display_name":"Rejeki Simanjorang","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Rejeki Simanjorang","raw_affiliation_strings":["Applied Technology Group, Rolls-Royce Singapore Pte., Ltd., Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Applied Technology Group, Rolls-Royce Singapore Pte., Ltd., Singapore","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":5.8475,"has_fulltext":false,"cited_by_count":89,"citation_normalized_percentile":{"value":0.96649574,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":100},"biblio":{"volume":"65","issue":"2","first_page":"1051","last_page":"1061"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.770966649055481},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7274959087371826},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.7254061102867126},{"id":"https://openalex.org/keywords/flyback-diode","display_name":"Flyback diode","score":0.6528207063674927},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6359606385231018},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.6224126815795898},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.552756130695343},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.543419599533081},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5009703636169434},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.43733346462249756},{"id":"https://openalex.org/keywords/rectification","display_name":"Rectification","score":0.4149402976036072},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.41136786341667175},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3942870497703552},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.37634533643722534},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2061423659324646},{"id":"https://openalex.org/keywords/flyback-transformer","display_name":"Flyback transformer","score":0.11563265323638916},{"id":"https://openalex.org/keywords/transformer","display_name":"Transformer","score":0.07357126474380493},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.06782054901123047}],"concepts":[{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.770966649055481},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7274959087371826},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.7254061102867126},{"id":"https://openalex.org/C166869088","wikidata":"https://www.wikidata.org/wiki/Q888791","display_name":"Flyback diode","level":5,"score":0.6528207063674927},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6359606385231018},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.6224126815795898},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.552756130695343},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.543419599533081},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5009703636169434},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.43733346462249756},{"id":"https://openalex.org/C50942859","wikidata":"https://www.wikidata.org/wiki/Q4967193","display_name":"Rectification","level":3,"score":0.4149402976036072},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.41136786341667175},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3942870497703552},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.37634533643722534},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2061423659324646},{"id":"https://openalex.org/C17321440","wikidata":"https://www.wikidata.org/wiki/Q184909","display_name":"Flyback transformer","level":4,"score":0.11563265323638916},{"id":"https://openalex.org/C66322947","wikidata":"https://www.wikidata.org/wiki/Q11658","display_name":"Transformer","level":3,"score":0.07357126474380493},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.06782054901123047},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/tie.2017.2733483","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2733483","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},{"id":"pmh:oai:dr.ntu.edu.sg:10356/140064","is_oa":false,"landing_page_url":"https://hdl.handle.net/10356/140064","pdf_url":null,"source":{"id":"https://openalex.org/S4306402609","display_name":"DR-NTU (Nanyang Technological University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I172675005","host_organization_name":"Nanyang Technological University","host_organization_lineage":["https://openalex.org/I172675005"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Journal Article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8700000047683716,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320273","display_name":"University of Cambridge","ror":"https://ror.org/013meh722"},{"id":"https://openalex.org/F4320320698","display_name":"National University of Singapore","ror":"https://ror.org/01tgyzw49"},{"id":"https://openalex.org/F4320320709","display_name":"National Research Foundation Singapore","ror":"https://ror.org/03cpyc314"},{"id":"https://openalex.org/F4320320766","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302"},{"id":"https://openalex.org/F4320330553","display_name":"CAEP Foundation","ror":null},{"id":"https://openalex.org/F4320336025","display_name":"Science Challenge Project","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":44,"referenced_works":["https://openalex.org/W206516418","https://openalex.org/W1902744722","https://openalex.org/W1977752034","https://openalex.org/W2002738922","https://openalex.org/W2010447884","https://openalex.org/W2019263831","https://openalex.org/W2021095465","https://openalex.org/W2022924319","https://openalex.org/W2026495663","https://openalex.org/W2039935881","https://openalex.org/W2064548718","https://openalex.org/W2086397266","https://openalex.org/W2096486729","https://openalex.org/W2103033568","https://openalex.org/W2111480420","https://openalex.org/W2111861894","https://openalex.org/W2115005678","https://openalex.org/W2119270445","https://openalex.org/W2122105796","https://openalex.org/W2122437143","https://openalex.org/W2122579082","https://openalex.org/W2128467083","https://openalex.org/W2128627293","https://openalex.org/W2141035542","https://openalex.org/W2146514701","https://openalex.org/W2148901935","https://openalex.org/W2166315761","https://openalex.org/W2171886847","https://openalex.org/W2286557499","https://openalex.org/W2310877113","https://openalex.org/W2399099622","https://openalex.org/W2538556214","https://openalex.org/W2539914908","https://openalex.org/W2542614170","https://openalex.org/W2593523116","https://openalex.org/W2605055225","https://openalex.org/W2607845296","https://openalex.org/W2954740687","https://openalex.org/W3147537413","https://openalex.org/W4252031869","https://openalex.org/W6608370848","https://openalex.org/W6639593162","https://openalex.org/W6729342613","https://openalex.org/W6734316613"],"related_works":["https://openalex.org/W4387714846","https://openalex.org/W2147656057","https://openalex.org/W1800216104","https://openalex.org/W1540585561","https://openalex.org/W1981646027","https://openalex.org/W2917180890","https://openalex.org/W2614156624","https://openalex.org/W2911343812","https://openalex.org/W2124971553","https://openalex.org/W2064836534"],"abstract_inverted_index":{"For":[0],"power":[1,113],"converters":[2],"with":[3,103],"inductive":[4],"loads,":[5],"a":[6,53,104,151],"freewheeling":[7,33,108],"path":[8],"is":[9,23,63,76,94,124,147,175],"needed":[10],"for":[11,116,179],"the":[12,28,32,37,45,71,85,91,117,127,136,172,180],"current":[13],"due":[14,134],"to":[15,26,36,66,135],"reactive":[16],"power.":[17],"The":[18],"MOSFET":[19,51,174],"synchronous":[20],"rectification":[21],"(SR)":[22],"widely":[24],"used":[25],"reduce":[27],"conduction":[29],"loss":[30,114],"during":[31,84],"period.":[34],"Due":[35],"wide":[38],"band":[39],"gap":[40],"of":[41,49,143,154],"silicon":[42],"carbide":[43],"(SiC),":[44],"intrinsic":[46],"body":[47],"diode":[48,62,75,109],"SiC":[50,60,73,98,144,173],"exhibits":[52],"high":[54],"voltage":[55],"drop.":[56],"Hence,":[57],"an":[58,97,176],"antiparallel":[59],"Schottky":[61,74],"normally":[64],"implemented":[65],"eliminate":[67],"its":[68],"conduction.":[69],"However,":[70],"external":[72],"not":[77],"fully":[78],"utilized":[79],"as":[80],"it":[81],"only":[82],"works":[83],"dead":[86],"time.":[87],"In":[88],"this":[89],"paper,":[90],"hard-switching":[92],"SR":[93,130,164],"investigated":[95],"in":[96],"three-phase":[99,145],"inverter":[100,106,128,146],"and":[101,157,165],"compared":[102],"conventional":[105],"using":[107,129,163],"(FWD).":[110],"An":[111],"improved":[112],"model":[115],"two":[118],"inverters":[119],"has":[120,131],"been":[121],"developed.":[122],"It":[123],"found":[125],"that":[126,171],"higher":[132],"efficiency":[133,153],"smaller":[137],"switching":[138],"loss.":[139],"A":[140],"7-kW":[141],"prototype":[142],"built,":[148],"which":[149],"achieves":[150],"peak":[152],"98.8%":[155],"(\u00b10.15%)":[156,159],"98.5%":[158],"at":[160],"40":[161],"kHz":[162],"FWD,":[166],"respectively.":[167],"This":[168],"paper":[169],"confirms":[170],"ideal":[177],"candidate":[178],"SR.":[181]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":14},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":11},{"year":2022,"cited_by_count":9},{"year":2021,"cited_by_count":7},{"year":2020,"cited_by_count":19},{"year":2019,"cited_by_count":15},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":1}],"updated_date":"2026-06-13T07:54:00.901334","created_date":"2025-10-10T00:00:00"}
