{"id":"https://openalex.org/W2725017948","doi":"https://doi.org/10.1109/tie.2017.2723865","title":"High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide","display_name":"High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide","publication_year":2017,"publication_date":"2017-07-05","ids":{"openalex":"https://openalex.org/W2725017948","doi":"https://doi.org/10.1109/tie.2017.2723865","mag":"2725017948"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2017.2723865","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2723865","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://hdl.handle.net/10651/43447","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012919189","display_name":"Victor Soler","orcid":"https://orcid.org/0000-0001-8341-8549"},"institutions":[{"id":"https://openalex.org/I123044942","display_name":"Universitat Aut\u00f2noma de Barcelona","ror":"https://ror.org/052g8jq94","country_code":"ES","type":"education","lineage":["https://openalex.org/I123044942"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]},{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"funder","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]}],"countries":["ES"],"is_corresponding":true,"raw_author_name":"Victor Soler","raw_affiliation_strings":["Institut de Microelectr\u00f2nica de Barcelona, Centre Nacional de Microelectr\u00f2nica (IMB-CNM), Consejo Superior de Investigaciones Cient\u00edficas (CSIC), Campus de la Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Institut de Microelectr\u00f2nica de Barcelona, Centre Nacional de Microelectr\u00f2nica (IMB-CNM), Consejo Superior de Investigaciones Cient\u00edficas (CSIC), Campus de la Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I134820265","https://openalex.org/I4210160312","https://openalex.org/I123044942"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063714420","display_name":"Maria Cabello","orcid":"https://orcid.org/0000-0001-7616-5109"},"institutions":[{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]},{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"funder","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I123044942","display_name":"Universitat Aut\u00f2noma de Barcelona","ror":"https://ror.org/052g8jq94","country_code":"ES","type":"education","lineage":["https://openalex.org/I123044942"]},{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Maria Cabello","raw_affiliation_strings":["Institut de Microelectr\u00f2nica de Barcelona, Centre Nacional de Microelectr\u00f2nica (IMB-CNM), Consejo Superior de Investigaciones Cient\u00edficas (CSIC), Campus de la Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Institut de Microelectr\u00f2nica de Barcelona, Centre Nacional de Microelectr\u00f2nica (IMB-CNM), Consejo Superior de Investigaciones Cient\u00edficas (CSIC), Campus de la Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I134820265","https://openalex.org/I4210160312","https://openalex.org/I123044942"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072366786","display_name":"Maxime Berthou","orcid":"https://orcid.org/0000-0002-2026-4957"},"institutions":[{"id":"https://openalex.org/I4210144554","display_name":"Cedrat Technologies (France)","ror":"https://ror.org/05c244n89","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210144554"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Maxime Berthou","raw_affiliation_strings":["CALY Technologies, Centre d'Entreprise et d'Innovation, Villeurbanne, France"],"affiliations":[{"raw_affiliation_string":"CALY Technologies, Centre d'Entreprise et d'Innovation, Villeurbanne, France","institution_ids":["https://openalex.org/I4210144554"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065043843","display_name":"J. Montserrat","orcid":"https://orcid.org/0000-0002-4107-5346"},"institutions":[{"id":"https://openalex.org/I123044942","display_name":"Universitat Aut\u00f2noma de Barcelona","ror":"https://ror.org/052g8jq94","country_code":"ES","type":"education","lineage":["https://openalex.org/I123044942"]},{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"funder","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Josep Montserrat","raw_affiliation_strings":["Institut de Microelectr\u00f2nica de Barcelona, Centre Nacional de Microelectr\u00f2nica (IMB-CNM), Consejo Superior de Investigaciones Cient\u00edficas (CSIC), Campus de la Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Institut de Microelectr\u00f2nica de Barcelona, Centre Nacional de Microelectr\u00f2nica (IMB-CNM), Consejo Superior de Investigaciones Cient\u00edficas (CSIC), Campus de la Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I134820265","https://openalex.org/I4210160312","https://openalex.org/I123044942"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081760403","display_name":"J. Rebollo","orcid":"https://orcid.org/0000-0002-4833-737X"},"institutions":[{"id":"https://openalex.org/I123044942","display_name":"Universitat Aut\u00f2noma de Barcelona","ror":"https://ror.org/052g8jq94","country_code":"ES","type":"education","lineage":["https://openalex.org/I123044942"]},{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"funder","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Jose Rebollo","raw_affiliation_strings":["Institut de Microelectr\u00f2nica de Barcelona, Centre Nacional de Microelectr\u00f2nica (IMB-CNM), Consejo Superior de Investigaciones Cient\u00edficas (CSIC), Campus de la Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Institut de Microelectr\u00f2nica de Barcelona, Centre Nacional de Microelectr\u00f2nica (IMB-CNM), Consejo Superior de Investigaciones Cient\u00edficas (CSIC), Campus de la Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I134820265","https://openalex.org/I4210160312","https://openalex.org/I123044942"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012359906","display_name":"Philippe Godignon","orcid":"https://orcid.org/0000-0002-9273-9819"},"institutions":[{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]},{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]},{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"funder","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I123044942","display_name":"Universitat Aut\u00f2noma de Barcelona","ror":"https://ror.org/052g8jq94","country_code":"ES","type":"education","lineage":["https://openalex.org/I123044942"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Philippe Godignon","raw_affiliation_strings":["Institut de Microelectr\u00f2nica de Barcelona, Centre Nacional de Microelectr\u00f2nica (IMB-CNM), Consejo Superior de Investigaciones Cient\u00edficas (CSIC), Campus de la Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Institut de Microelectr\u00f2nica de Barcelona, Centre Nacional de Microelectr\u00f2nica (IMB-CNM), Consejo Superior de Investigaciones Cient\u00edficas (CSIC), Campus de la Universitat Aut\u00f2noma de Barcelona, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I134820265","https://openalex.org/I4210160312","https://openalex.org/I123044942"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108598380","display_name":"Andrei Mih\u0103il\u0103","orcid":null},"institutions":[{"id":"https://openalex.org/I885143765","display_name":"ABB (Switzerland)","ror":"https://ror.org/00ks5vt51","country_code":"CH","type":"company","lineage":["https://openalex.org/I885143765"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Andrei Mihaila","raw_affiliation_strings":["ABB Switzerland Ltd, Corporate Research Centre, Baden-D\u00e4ttwil, Switzerland"],"affiliations":[{"raw_affiliation_string":"ABB Switzerland Ltd, Corporate Research Centre, Baden-D\u00e4ttwil, Switzerland","institution_ids":["https://openalex.org/I885143765"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035314449","display_name":"Mar\u00eda R. Rogina","orcid":"https://orcid.org/0000-0002-3692-9781"},"institutions":[{"id":"https://openalex.org/I165339363","display_name":"Universidad de Oviedo","ror":"https://ror.org/006gksa02","country_code":"ES","type":"education","lineage":["https://openalex.org/I165339363"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Maria R. Rogina","raw_affiliation_strings":["Grupo de Sistemas Electr\u00f3nicos de Alimentaci\u00f3n, Campus de Viesques, Universidad de Oviedo, Oviedo, Spain"],"affiliations":[{"raw_affiliation_string":"Grupo de Sistemas Electr\u00f3nicos de Alimentaci\u00f3n, Campus de Viesques, Universidad de Oviedo, Oviedo, Spain","institution_ids":["https://openalex.org/I165339363"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100657504","display_name":"Alberto Rodr\u00edguez","orcid":"https://orcid.org/0000-0002-6541-4509"},"institutions":[{"id":"https://openalex.org/I165339363","display_name":"Universidad de Oviedo","ror":"https://ror.org/006gksa02","country_code":"ES","type":"education","lineage":["https://openalex.org/I165339363"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Alberto Rodriguez","raw_affiliation_strings":["Grupo de Sistemas Electr\u00f3nicos de Alimentaci\u00f3n, Campus de Viesques, Universidad de Oviedo, Oviedo, Spain"],"affiliations":[{"raw_affiliation_string":"Grupo de Sistemas Electr\u00f3nicos de Alimentaci\u00f3n, Campus de Viesques, Universidad de Oviedo, Oviedo, Spain","institution_ids":["https://openalex.org/I165339363"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5029034818","display_name":"J. Sebasti\u00e1n","orcid":"https://orcid.org/0000-0002-9717-866X"},"institutions":[{"id":"https://openalex.org/I165339363","display_name":"Universidad de Oviedo","ror":"https://ror.org/006gksa02","country_code":"ES","type":"education","lineage":["https://openalex.org/I165339363"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Javier Sebastian","raw_affiliation_strings":["Grupo de Sistemas Electr\u00f3nicos de Alimentaci\u00f3n, Campus de Viesques, Universidad de Oviedo, Oviedo, Spain"],"affiliations":[{"raw_affiliation_string":"Grupo de Sistemas Electr\u00f3nicos de Alimentaci\u00f3n, Campus de Viesques, Universidad de Oviedo, Oviedo, Spain","institution_ids":["https://openalex.org/I165339363"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":10,"corresponding_author_ids":["https://openalex.org/A5012919189"],"corresponding_institution_ids":["https://openalex.org/I123044942","https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"],"apc_list":null,"apc_paid":null,"fwci":1.4607,"has_fulltext":true,"cited_by_count":25,"citation_normalized_percentile":{"value":0.8328828,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":"64","issue":"11","first_page":"8962","last_page":"8970"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9848999977111816,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.700347900390625},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6134364604949951},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.5984104871749878},{"id":"https://openalex.org/keywords/boron","display_name":"Boron","score":0.592797577381134},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5584245920181274},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.5357562303543091},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.477277934551239},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4620491862297058},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.4606066048145294},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4306830167770386},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.43049919605255127},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.4288242757320404},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"Electron mobility","score":0.4202219843864441},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3916826844215393},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.37382203340530396},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.14809462428092957},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14273688197135925},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.09058451652526855}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.700347900390625},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6134364604949951},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5984104871749878},{"id":"https://openalex.org/C501308230","wikidata":"https://www.wikidata.org/wiki/Q618","display_name":"Boron","level":2,"score":0.592797577381134},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5584245920181274},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5357562303543091},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.477277934551239},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4620491862297058},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4606066048145294},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4306830167770386},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.43049919605255127},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4288242757320404},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.4202219843864441},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3916826844215393},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.37382203340530396},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14809462428092957},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14273688197135925},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.09058451652526855},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/tie.2017.2723865","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2723865","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},{"id":"pmh:oai:dnet:ruo_________::30eaffff12a068478b051cb317a1edda","is_oa":true,"landing_page_url":"http://hdl.handle.net/10651/43447","pdf_url":"http://hdl.handle.net/10651/43447","source":{"id":"https://openalex.org/S4306402641","display_name":"LA Referencia (Red Federada de Repositorios Institucionales de Publicaciones Cient\u00edficas)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4383465926","host_organization_name":"LA Referencia","host_organization_lineage":["https://openalex.org/I4383465926"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":{"id":"pmh:oai:dnet:ruo_________::30eaffff12a068478b051cb317a1edda","is_oa":true,"landing_page_url":"http://hdl.handle.net/10651/43447","pdf_url":"http://hdl.handle.net/10651/43447","source":{"id":"https://openalex.org/S4306402641","display_name":"LA Referencia (Red Federada de Repositorios Institucionales de Publicaciones Cient\u00edficas)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4383465926","host_organization_name":"LA Referencia","host_organization_lineage":["https://openalex.org/I4383465926"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.5699999928474426,"display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G736193460","display_name":null,"funder_award_id":"TEC2014-54357-C2-1-R","funder_id":"https://openalex.org/F4320321837","funder_display_name":"Ministerio de Econom\u00eda y Competitividad"},{"id":"https://openalex.org/G8922915789","display_name":null,"funder_award_id":"(FEDER)","funder_id":"https://openalex.org/F4320335322","funder_display_name":"European Regional Development Fund"}],"funders":[{"id":"https://openalex.org/F4320321837","display_name":"Ministerio de Econom\u00eda y Competitividad","ror":"https://ror.org/034900433"},{"id":"https://openalex.org/F4320335322","display_name":"European Regional Development Fund","ror":"https://ror.org/00k4n6c32"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2725017948.pdf","grobid_xml":"https://content.openalex.org/works/W2725017948.grobid-xml"},"referenced_works_count":16,"referenced_works":["https://openalex.org/W560108912","https://openalex.org/W2029699094","https://openalex.org/W2036902492","https://openalex.org/W2041059219","https://openalex.org/W2065514820","https://openalex.org/W2113990904","https://openalex.org/W2246024080","https://openalex.org/W2313138297","https://openalex.org/W2318451376","https://openalex.org/W2321142211","https://openalex.org/W2332759975","https://openalex.org/W2403558074","https://openalex.org/W2406154944","https://openalex.org/W2498438453","https://openalex.org/W2505507599","https://openalex.org/W6615470668"],"related_works":["https://openalex.org/W1596137476","https://openalex.org/W2049186354","https://openalex.org/W4285789043","https://openalex.org/W1634484921","https://openalex.org/W2084063759","https://openalex.org/W4205375338","https://openalex.org/W2131788322","https://openalex.org/W2058564794","https://openalex.org/W2545798368","https://openalex.org/W2370077481"],"abstract_inverted_index":{"A":[0],"new":[1],"process":[2],"technology":[3],"for":[4,156],"4H-SiC":[5],"planar":[6],"power":[7,41],"MOSFETs":[8,42],"based":[9],"on":[10,110],"a":[11,77,165],"boron":[12,71,108,155],"diffusion":[13],"step":[14],"to":[15,34,107,122,136],"improve":[16],"the":[17,81,86,99,102,117,125,131,144,152,157],"SiO":[18],"<sub":[19],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[20,38],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[21],"/silicon":[22],"carbide":[23],"interface":[24],"quality":[25],"is":[26,114,148,169],"presented":[27],"in":[28,58,66,124,164],"this":[29],"paper.":[30],"Large":[31],"area":[32],"(up":[33],"25":[35],"mm":[36],"<sup":[37],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[39],")":[40],"of":[43,60,80,101,138,154],"three":[44],"voltages":[45],"ratings":[46],"(1.7,":[47],"3.3,":[48],"and":[49,64,143],"4.5":[50],"kV)":[51],"have":[52],"been":[53],"fabricated":[54],"showing":[55],"significant":[56],"improvements":[57],"terms":[59],"inversion":[61],"channel":[62,82,104],"mobility":[63,105],"on-resistance":[65],"comparison":[67],"with":[68],"counterparts":[69],"without":[70],"oxide":[72,159],"treatment.":[73],"Experimental":[74],"results":[75],"show":[76],"remarkable":[78],"increase":[79],"mobility,":[83],"which":[84],"raises":[85],"device":[87,145],"current":[88],"capability,":[89],"especially":[90],"at":[91,96],"room":[92],"temperature.":[93],"When":[94],"operating":[95],"high":[97,103],"temperature,":[98],"impact":[100],"due":[106],"treatment":[109],"electrical":[111],"forward":[112],"characteristics":[113,134],"reduced":[115],"as":[116],"drift":[118],"layer":[119],"resistance":[120],"starts":[121],"dominate":[123],"total":[126],"on-state":[127],"resistance.":[128],"In":[129],"addition,":[130],"third":[132],"quadrant":[133],"approximate":[135],"those":[137],"an":[139],"ideal":[140],"PiN":[141],"diode,":[142],"blocking":[146],"capability":[147],"not":[149],"compromised":[150],"by":[151],"use":[153],"gate":[158],"formation.":[160],"The":[161],"experimental":[162],"performance":[163],"simple":[166],"dc/dc":[167],"converter":[168],"also":[170],"presented.":[171]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":7},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":3},{"year":2017,"cited_by_count":4}],"updated_date":"2026-04-10T15:06:20.359241","created_date":"2025-10-10T00:00:00"}