{"id":"https://openalex.org/W2707943909","doi":"https://doi.org/10.1109/tie.2017.2719599","title":"Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs","display_name":"Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs","publication_year":2017,"publication_date":"2017-06-23","ids":{"openalex":"https://openalex.org/W2707943909","doi":"https://doi.org/10.1109/tie.2017.2719599","mag":"2707943909"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2017.2719599","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2719599","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://hdl.handle.net/10261/416226","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5001418567","display_name":"M. Fern\u00e1ndez","orcid":"https://orcid.org/0000-0001-6793-3575"},"institutions":[{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]},{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"funder","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":true,"raw_author_name":"Manuel Fernandez","raw_affiliation_strings":["Instituto de Microelectr\u00f3nica de Barcelona\u2013Centro Nacional de Microelectr\u00f3nica, Consejo Superior de Investigaciones Cient\u00edficas, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Instituto de Microelectr\u00f3nica de Barcelona\u2013Centro Nacional de Microelectr\u00f3nica, Consejo Superior de Investigaciones Cient\u00edficas, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I134820265","https://openalex.org/I4210160312"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033106452","display_name":"X. Perpi\u00f1\u00e0","orcid":"https://orcid.org/0000-0001-5946-5580"},"institutions":[{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]},{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"funder","lineage":["https://openalex.org/I134820265"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Xavier Perpina","raw_affiliation_strings":["Instituto de Microelectr\u00f3nica de Barcelona\u2013Centro Nacional de Microelectr\u00f3nica, Consejo Superior de Investigaciones Cient\u00edficas, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Instituto de Microelectr\u00f3nica de Barcelona\u2013Centro Nacional de Microelectr\u00f3nica, Consejo Superior de Investigaciones Cient\u00edficas, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I134820265","https://openalex.org/I4210160312"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088319478","display_name":"Jaume Roig-Guitart","orcid":null},"institutions":[{"id":"https://openalex.org/I4210110772","display_name":"ON Semiconductor (Belgium)","ror":"https://ror.org/0212gej90","country_code":"BE","type":"company","lineage":["https://openalex.org/I100625452","https://openalex.org/I4210110772"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Jaume Roig-Guitart","raw_affiliation_strings":["Corporate R&D, Power Technology Center, ON Semiconductor Belgium BVBA, Oudenaarde, Belgium"],"affiliations":[{"raw_affiliation_string":"Corporate R&D, Power Technology Center, ON Semiconductor Belgium BVBA, Oudenaarde, Belgium","institution_ids":["https://openalex.org/I4210110772"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009741194","display_name":"M. Vellveh\u0131\u0301","orcid":"https://orcid.org/0000-0002-0127-4690"},"institutions":[{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]},{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"funder","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Miquel Vellvehi","raw_affiliation_strings":["Instituto de Microelectr\u00f3nica de Barcelona\u2013Centro Nacional de Microelectr\u00f3nica, Consejo Superior de Investigaciones Cient\u00edficas, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Instituto de Microelectr\u00f3nica de Barcelona\u2013Centro Nacional de Microelectr\u00f3nica, Consejo Superior de Investigaciones Cient\u00edficas, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I134820265","https://openalex.org/I4210160312"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084691675","display_name":"F. Bauwens","orcid":null},"institutions":[{"id":"https://openalex.org/I4210110772","display_name":"ON Semiconductor (Belgium)","ror":"https://ror.org/0212gej90","country_code":"BE","type":"company","lineage":["https://openalex.org/I100625452","https://openalex.org/I4210110772"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Filip Bauwens","raw_affiliation_strings":["Corporate R&D, Power Technology Center, ON Semiconductor Belgium BVBA, Oudenaarde, Belgium"],"affiliations":[{"raw_affiliation_string":"Corporate R&D, Power Technology Center, ON Semiconductor Belgium BVBA, Oudenaarde, Belgium","institution_ids":["https://openalex.org/I4210110772"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038696282","display_name":"M. Tack","orcid":null},"institutions":[{"id":"https://openalex.org/I4210110772","display_name":"ON Semiconductor (Belgium)","ror":"https://ror.org/0212gej90","country_code":"BE","type":"company","lineage":["https://openalex.org/I100625452","https://openalex.org/I4210110772"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"Marnix Tack","raw_affiliation_strings":["Corporate R&D, Power Technology Center, ON Semiconductor Belgium BVBA, Oudenaarde, Belgium"],"affiliations":[{"raw_affiliation_string":"Corporate R&D, Power Technology Center, ON Semiconductor Belgium BVBA, Oudenaarde, Belgium","institution_ids":["https://openalex.org/I4210110772"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5035526543","display_name":"X. Jord\u00e0","orcid":"https://orcid.org/0000-0003-1967-610X"},"institutions":[{"id":"https://openalex.org/I134820265","display_name":"Consejo Superior de Investigaciones Cient\u00edficas","ror":"https://ror.org/02gfc7t72","country_code":"ES","type":"funder","lineage":["https://openalex.org/I134820265"]},{"id":"https://openalex.org/I4210147934","display_name":"Centro Nacional de Microelectr\u00f3nica","ror":"https://ror.org/03ycqrz18","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934"]},{"id":"https://openalex.org/I4210160312","display_name":"Institut de Microelectr\u00f2nica de Barcelona","ror":"https://ror.org/04pnym676","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Xavier Jorda","raw_affiliation_strings":["Instituto de Microelectr\u00f3nica de Barcelona\u2013Centro Nacional de Microelectr\u00f3nica, Consejo Superior de Investigaciones Cient\u00edficas, Barcelona, Spain"],"affiliations":[{"raw_affiliation_string":"Instituto de Microelectr\u00f3nica de Barcelona\u2013Centro Nacional de Microelectr\u00f3nica, Consejo Superior de Investigaciones Cient\u00edficas, Barcelona, Spain","institution_ids":["https://openalex.org/I4210147934","https://openalex.org/I134820265","https://openalex.org/I4210160312"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5001418567"],"corresponding_institution_ids":["https://openalex.org/I134820265","https://openalex.org/I4210147934","https://openalex.org/I4210160312"],"apc_list":null,"apc_paid":null,"fwci":7.518,"has_fulltext":false,"cited_by_count":90,"citation_normalized_percentile":{"value":0.97942319,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":100},"biblio":{"volume":"64","issue":"11","first_page":"9012","last_page":"9022"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.873660683631897},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7632913589477539},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7524166107177734},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6574696898460388},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.6309642791748047},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.5573990345001221},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4326813220977783},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.42935553193092346},{"id":"https://openalex.org/keywords/insulator","display_name":"Insulator (electricity)","score":0.4232301115989685},{"id":"https://openalex.org/keywords/nitride","display_name":"Nitride","score":0.41983911395072937},{"id":"https://openalex.org/keywords/indium-gallium-nitride","display_name":"Indium gallium nitride","score":0.4169624149799347},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.33430245518684387},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.14121800661087036},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12958449125289917}],"concepts":[{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.873660683631897},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7632913589477539},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7524166107177734},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6574696898460388},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.6309642791748047},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.5573990345001221},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4326813220977783},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.42935553193092346},{"id":"https://openalex.org/C212702","wikidata":"https://www.wikidata.org/wiki/Q178150","display_name":"Insulator (electricity)","level":2,"score":0.4232301115989685},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.41983911395072937},{"id":"https://openalex.org/C2778245067","wikidata":"https://www.wikidata.org/wiki/Q425734","display_name":"Indium gallium nitride","level":4,"score":0.4169624149799347},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.33430245518684387},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.14121800661087036},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12958449125289917},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/tie.2017.2719599","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2719599","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},{"id":"pmh:oai:digital.csic.es:10261/416226","is_oa":true,"landing_page_url":"http://hdl.handle.net/10261/416226","pdf_url":null,"source":{"id":"https://openalex.org/S4306400616","display_name":"DIGITAL.CSIC (Spanish National Research Council (CSIC))","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I134820265","host_organization_name":"Consejo Superior de Investigaciones Cient\u00edficas","host_organization_lineage":["https://openalex.org/I134820265"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/publishedVersion"}],"best_oa_location":{"id":"pmh:oai:digital.csic.es:10261/416226","is_oa":true,"landing_page_url":"http://hdl.handle.net/10261/416226","pdf_url":null,"source":{"id":"https://openalex.org/S4306400616","display_name":"DIGITAL.CSIC (Spanish National Research Council (CSIC))","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I134820265","host_organization_name":"Consejo Superior de Investigaciones Cient\u00edficas","host_organization_lineage":["https://openalex.org/I134820265"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"acceptedVersion","is_accepted":true,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/publishedVersion"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.75}],"awards":[{"id":"https://openalex.org/G4185227582","display_name":null,"funder_award_id":"Contract TEC2014-51903-R","funder_id":"https://openalex.org/F4320321837","funder_display_name":"Ministerio de Econom\u00eda y Competitividad"},{"id":"https://openalex.org/G5232156655","display_name":null,"funder_award_id":"Contract PCIN-2014-057","funder_id":"https://openalex.org/F4320321837","funder_display_name":"Ministerio de Econom\u00eda y Competitividad"},{"id":"https://openalex.org/G5505266644","display_name":null,"funder_award_id":"Contract RYC-2010-07434","funder_id":"https://openalex.org/F4320321837","funder_display_name":"Ministerio de Econom\u00eda y Competitividad"},{"id":"https://openalex.org/G6632116167","display_name":null,"funder_award_id":"2014-SGR 1596","funder_id":"https://openalex.org/F4320334830","funder_display_name":"Ag\u00e8ncia de Gesti\u00f3 d'Ajuts Universitaris i de Recerca"}],"funders":[{"id":"https://openalex.org/F4320320079","display_name":"British Society for Haematology","ror":"https://ror.org/02fndbp74"},{"id":"https://openalex.org/F4320321837","display_name":"Ministerio de Econom\u00eda y Competitividad","ror":"https://ror.org/034900433"},{"id":"https://openalex.org/F4320334830","display_name":"Ag\u00e8ncia de Gesti\u00f3 d'Ajuts Universitaris i de Recerca","ror":"https://ror.org/01n4pqe45"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":35,"referenced_works":["https://openalex.org/W1540566026","https://openalex.org/W1801635354","https://openalex.org/W1985468320","https://openalex.org/W1994966465","https://openalex.org/W1998035172","https://openalex.org/W2023412267","https://openalex.org/W2029699094","https://openalex.org/W2045899144","https://openalex.org/W2061788622","https://openalex.org/W2065088108","https://openalex.org/W2077272369","https://openalex.org/W2087465251","https://openalex.org/W2110769912","https://openalex.org/W2123951321","https://openalex.org/W2124544980","https://openalex.org/W2145880618","https://openalex.org/W2148574632","https://openalex.org/W2170884280","https://openalex.org/W2277520195","https://openalex.org/W2294305164","https://openalex.org/W2304792220","https://openalex.org/W2318153903","https://openalex.org/W2318795750","https://openalex.org/W2325765532","https://openalex.org/W2344656427","https://openalex.org/W2461874365","https://openalex.org/W2464793769","https://openalex.org/W2472160638","https://openalex.org/W2519209832","https://openalex.org/W2519239207","https://openalex.org/W2566904288","https://openalex.org/W2566946734","https://openalex.org/W2588330291","https://openalex.org/W2980017732","https://openalex.org/W6730846839"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W1975307200","https://openalex.org/W4377089489","https://openalex.org/W3088454288","https://openalex.org/W2466508933","https://openalex.org/W2433290148","https://openalex.org/W1790618316","https://openalex.org/W2560101886"],"abstract_inverted_index":{"This":[0],"paper":[1],"studies":[2],"by":[3],"experimentation":[4],"and":[5,25,44],"physics-based":[6],"simulation":[7],"the":[8,35],"Short-Circuit":[9],"(SC)":[10],"capability":[11,50],"of":[12],"several":[13],"normally-off":[14],"600-650":[15],"V":[16],"Gallium":[17],"Nitride":[18],"High-Electron-Mobility":[19],"Transistors":[20],"(GaN":[21],"HEMTs):":[22],"cascodes,":[23],"p-GaN,":[24],"GaN":[26,75],"Metal-Insulator-Semiconductor":[27],"HEMTs":[28,43],"(MISHEMTs).":[29],"As":[30],"a":[31,47,60],"result,":[32],"cascodes":[33],"present":[34],"worst":[36],"SC":[37,49,80],"ruggedness.":[38],"By":[39],"contrast,":[40],"p-GaN":[41],"gate":[42],"MISHEMTs":[45],"provide":[46],"higher":[48],"thanks":[51],"to":[52],"their":[53],"strong":[54],"drain":[55],"current":[56,74],"reduction.":[57],"In":[58],"addition,":[59],"valuable":[61],"state-of-the-art":[62],"about":[63],"all":[64],"commercially":[65],"available":[66],"technologies":[67],"is":[68],"also":[69],"provided,":[70],"which":[71],"demonstrates":[72],"that":[73],"devices":[76],"do":[77],"not":[78],"allow":[79],"capability.":[81]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":9},{"year":2024,"cited_by_count":12},{"year":2023,"cited_by_count":15},{"year":2022,"cited_by_count":9},{"year":2021,"cited_by_count":7},{"year":2020,"cited_by_count":18},{"year":2019,"cited_by_count":10},{"year":2018,"cited_by_count":6},{"year":2017,"cited_by_count":1}],"updated_date":"2026-03-28T08:17:26.163206","created_date":"2025-10-10T00:00:00"}