{"id":"https://openalex.org/W2603776286","doi":"https://doi.org/10.1109/tie.2017.2686365","title":"A Solution to Press-Pack Packaging of SiC MOSFETS","display_name":"A Solution to Press-Pack Packaging of SiC MOSFETS","publication_year":2017,"publication_date":"2017-03-23","ids":{"openalex":"https://openalex.org/W2603776286","doi":"https://doi.org/10.1109/tie.2017.2686365","mag":"2603776286"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2017.2686365","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2686365","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103257039","display_name":"Nan Zhu","orcid":"https://orcid.org/0000-0002-2895-9219"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Nan Zhu","raw_affiliation_strings":["College of Electrical Engineering, Zhejiang University, Hangzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electrical Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005564634","display_name":"H. Alan Mantooth","orcid":"https://orcid.org/0000-0001-6447-5345"},"institutions":[{"id":"https://openalex.org/I78715868","display_name":"University of Arkansas at Fayetteville","ror":"https://ror.org/05jbt9m15","country_code":"US","type":"education","lineage":["https://openalex.org/I78715868"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. Alan Mantooth","raw_affiliation_strings":["Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA","institution_ids":["https://openalex.org/I78715868"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100727764","display_name":"Dehong Xu","orcid":"https://orcid.org/0000-0003-0377-8881"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dehong Xu","raw_affiliation_strings":["College of Electrical Engineering, Zhejiang University, Hangzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electrical Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101460447","display_name":"Min Chen","orcid":"https://orcid.org/0000-0002-7661-2455"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Min Chen","raw_affiliation_strings":["College of Electrical Engineering, Zhejiang University, Hangzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electrical Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5088721570","display_name":"Michael D. Glover","orcid":"https://orcid.org/0000-0003-3907-1941"},"institutions":[{"id":"https://openalex.org/I78715868","display_name":"University of Arkansas at Fayetteville","ror":"https://ror.org/05jbt9m15","country_code":"US","type":"education","lineage":["https://openalex.org/I78715868"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael D. Glover","raw_affiliation_strings":["Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA","institution_ids":["https://openalex.org/I78715868"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.6547,"has_fulltext":false,"cited_by_count":104,"citation_normalized_percentile":{"value":0.93473712,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":100},"biblio":{"volume":"64","issue":"10","first_page":"8224","last_page":"8234"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9954000115394592,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heat-sink","display_name":"Heat sink","score":0.7714035511016846},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5943342447280884},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5318101644515991},{"id":"https://openalex.org/keywords/packaging-engineering","display_name":"Packaging engineering","score":0.5191501975059509},{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.4736712574958801},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.469612181186676},{"id":"https://openalex.org/keywords/stack","display_name":"Stack (abstract data type)","score":0.4428889751434326},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.43509361147880554},{"id":"https://openalex.org/keywords/interposer","display_name":"Interposer","score":0.4211888611316681},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.36234673857688904},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3608349561691284},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.25440168380737305},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22619321942329407},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.21688830852508545}],"concepts":[{"id":"https://openalex.org/C186937647","wikidata":"https://www.wikidata.org/wiki/Q1796959","display_name":"Heat sink","level":2,"score":0.7714035511016846},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5943342447280884},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5318101644515991},{"id":"https://openalex.org/C193149544","wikidata":"https://www.wikidata.org/wiki/Q7122904","display_name":"Packaging engineering","level":2,"score":0.5191501975059509},{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.4736712574958801},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.469612181186676},{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.4428889751434326},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.43509361147880554},{"id":"https://openalex.org/C158802814","wikidata":"https://www.wikidata.org/wiki/Q6056418","display_name":"Interposer","level":4,"score":0.4211888611316681},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36234673857688904},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3608349561691284},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.25440168380737305},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22619321942329407},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.21688830852508545},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tie.2017.2686365","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2686365","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8399999737739563,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G3695326409","display_name":null,"funder_award_id":"51337009","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7098384702","display_name":null,"funder_award_id":"51477152","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320322725","display_name":"China Scholarship Council","ror":"https://ror.org/04atp4p48"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":40,"referenced_works":["https://openalex.org/W626773769","https://openalex.org/W1522914110","https://openalex.org/W1581767488","https://openalex.org/W1641947315","https://openalex.org/W1858232793","https://openalex.org/W1946755820","https://openalex.org/W1948132877","https://openalex.org/W1950148748","https://openalex.org/W1980964991","https://openalex.org/W2003935246","https://openalex.org/W2025990136","https://openalex.org/W2031429172","https://openalex.org/W2033159497","https://openalex.org/W2082750739","https://openalex.org/W2097500916","https://openalex.org/W2104182114","https://openalex.org/W2105946114","https://openalex.org/W2107869960","https://openalex.org/W2112554335","https://openalex.org/W2129879973","https://openalex.org/W2144101182","https://openalex.org/W2145194572","https://openalex.org/W2150572642","https://openalex.org/W2156481705","https://openalex.org/W2166315761","https://openalex.org/W2167649766","https://openalex.org/W2168816616","https://openalex.org/W2313248492","https://openalex.org/W2470962035","https://openalex.org/W2472698299","https://openalex.org/W2540103369","https://openalex.org/W2549125167","https://openalex.org/W2550221067","https://openalex.org/W2567847192","https://openalex.org/W2588718461","https://openalex.org/W4206206436","https://openalex.org/W6639206922","https://openalex.org/W6658919545","https://openalex.org/W6720059106","https://openalex.org/W6729608979"],"related_works":["https://openalex.org/W2366452012","https://openalex.org/W2187095416","https://openalex.org/W2123056991","https://openalex.org/W1548482929","https://openalex.org/W1918297947","https://openalex.org/W2786366621","https://openalex.org/W1970419561","https://openalex.org/W1555304316","https://openalex.org/W2919177272","https://openalex.org/W2330549783"],"abstract_inverted_index":{"This":[0],"paper":[1],"proposes":[2],"a":[3,11,75,118,125],"packaging":[4,17,38,184],"method":[5],"for":[6],"SiC":[7,19,26,40,55,62,143],"MOSFETs":[8,20,41],"that":[9,49],"provides":[10],"feasible":[12],"solution":[13],"of":[14,25,39,54,140,164,181],"implementing":[15],"press-pack":[16,37,86,142,166],"on":[18,61],"to":[21,78,177],"extend":[22],"the":[23,29,45,51,85,93,97,99,104,116,141,165,168,179,182],"application":[24],"devices":[27],"into":[28],"high":[30],"power":[31,105],"range.":[32],"The":[33,134,159],"challenges":[34],"in":[35,74,103],"realizing":[36],"are":[42,47,72,145,171],"addressed,":[43],"and":[44,65,96,136,154,161,167,175],"solutions":[46],"proposed":[48,183],"fit":[50],"specific":[52],"requirements":[53],"MOSFET.":[56],"To":[57,107],"achieve":[58],"pressure":[59],"contact":[60],"MOSFETs,":[63],"miniature":[64],"flexible":[66],"press":[67],"pins":[68],"called":[69],"\u201cfuzz":[70],"buttons\u201d":[71],"used":[73],"low-profile":[76],"interposer":[77],"realize":[79],"die":[80],"top":[81],"side":[82],"connection.":[83],"Since":[84],"does":[87],"not":[88],"provide":[89],"internal":[90],"insulation":[91],"between":[92],"active":[94],"device":[95],"heatsink,":[98],"heatsink":[100,120],"is":[101,121,157],"included":[102],"loop.":[106],"avoid":[108],"large":[109],"parasitic":[110],"loop":[111],"inductance":[112],"being":[113],"introduced":[114],"by":[115,173],"heatsinks,":[117],"microchannel":[119],"developed":[122],"which":[123],"has":[124],"low":[126],"thickness":[127],"while":[128],"remaining":[129],"adequate":[130],"heat":[131],"dissipation":[132],"efficiency.":[133],"structure":[135],"assembly":[137],"process":[138],"flow":[139],"MOSFET":[144],"provided.":[146],"A":[147],"half-bridge":[148,169],"stack":[149,170],"prototype":[150],"with":[151],"two":[152],"press-packs":[153],"three":[155],"heatsinks":[156],"developed.":[158],"thermal":[160],"electrical":[162],"performances":[163],"evaluated":[172],"simulations":[174],"tests":[176],"validate":[178],"feasibility":[180],"approach.":[185]},"counts_by_year":[{"year":2026,"cited_by_count":5},{"year":2025,"cited_by_count":15},{"year":2024,"cited_by_count":13},{"year":2023,"cited_by_count":20},{"year":2022,"cited_by_count":15},{"year":2021,"cited_by_count":11},{"year":2020,"cited_by_count":10},{"year":2019,"cited_by_count":8},{"year":2018,"cited_by_count":6},{"year":2017,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}