{"id":"https://openalex.org/W2588401091","doi":"https://doi.org/10.1109/tie.2017.2669882","title":"A New Effective Methodology for Semiconductor Power Devices HTRB Testing","display_name":"A New Effective Methodology for Semiconductor Power Devices HTRB Testing","publication_year":2017,"publication_date":"2017-02-15","ids":{"openalex":"https://openalex.org/W2588401091","doi":"https://doi.org/10.1109/tie.2017.2669882","mag":"2588401091"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2017.2669882","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2669882","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072470570","display_name":"C. Nick Pace","orcid":"https://orcid.org/0000-0002-9998-7129"},"institutions":[{"id":"https://openalex.org/I45204951","display_name":"University of Calabria","ror":"https://ror.org/02rc97e94","country_code":"IT","type":"education","lineage":["https://openalex.org/I45204951"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"Calogero Pace","raw_affiliation_strings":["Department of Informatics, Modeling, Electronics and System Engineering, University of Calabria, Arcavacata di Rende, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Informatics, Modeling, Electronics and System Engineering, University of Calabria, Arcavacata di Rende, Italy","institution_ids":["https://openalex.org/I45204951"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078097347","display_name":"Jorge Hern\u00e1ndez-Ambato","orcid":"https://orcid.org/0000-0002-1841-2789"},"institutions":[{"id":"https://openalex.org/I4210137344","display_name":"Escuela Superior Polit\u00e9cnica del Chimborazo","ror":"https://ror.org/02zyw2q61","country_code":"EC","type":"education","lineage":["https://openalex.org/I4210137344"]}],"countries":["EC"],"is_corresponding":false,"raw_author_name":"Jorge Hernandez-Ambato","raw_affiliation_strings":["Computing and Electronic Faculty, Polytechnic School of Chimborazo, Riobamba, Ecuador"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Computing and Electronic Faculty, Polytechnic School of Chimborazo, Riobamba, Ecuador","institution_ids":["https://openalex.org/I4210137344"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081657857","display_name":"Letizia Fragomeni","orcid":"https://orcid.org/0000-0001-5980-2428"},"institutions":[{"id":"https://openalex.org/I45204951","display_name":"University of Calabria","ror":"https://ror.org/02rc97e94","country_code":"IT","type":"education","lineage":["https://openalex.org/I45204951"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Letizia Fragomeni","raw_affiliation_strings":["Department of Informatics, Modeling, Electronics and System Engineering, University of Calabria, Arcavacata di Rende, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Informatics, Modeling, Electronics and System Engineering, University of Calabria, Arcavacata di Rende, Italy","institution_ids":["https://openalex.org/I45204951"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051981656","display_name":"Giuseppe Consentino","orcid":"https://orcid.org/0000-0002-8509-1794"},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Giuseppe Consentino","raw_affiliation_strings":["Power Transistor Division, STMicroelectronics SRL, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Transistor Division, STMicroelectronics SRL, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019192645","display_name":"Alessandro D'Ignoti","orcid":"https://orcid.org/0000-0002-8807-4439"},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Alessandro D'Ignoti","raw_affiliation_strings":["Power Transistor Division, STMicroelectronics SRL, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Transistor Division, STMicroelectronics SRL, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018917157","display_name":"Salvatore Galiano","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Salvatore Galiano","raw_affiliation_strings":["Power Transistor Division, STMicroelectronics SRL, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Transistor Division, STMicroelectronics SRL, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037854271","display_name":"Antonio Grimaldi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Antonio Grimaldi","raw_affiliation_strings":["Power Transistor Division, STMicroelectronics SRL, Catania, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Transistor Division, STMicroelectronics SRL, Catania, Italy","institution_ids":["https://openalex.org/I4210154781"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5072470570"],"corresponding_institution_ids":["https://openalex.org/I45204951"],"apc_list":null,"apc_paid":null,"fwci":0.4384,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.63961473,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"64","issue":"6","first_page":"4857","last_page":"4865"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6885778307914734},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.5942772030830383},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5895361304283142},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.5438987612724304},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.49750903248786926},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4940066933631897},{"id":"https://openalex.org/keywords/semiconductor-device","display_name":"Semiconductor device","score":0.4526524245738983},{"id":"https://openalex.org/keywords/device-under-test","display_name":"Device under test","score":0.45029446482658386},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.44722312688827515},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44008031487464905},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4242528975009918},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4168374538421631},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.4144930839538574},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.38453200459480286},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.33513790369033813},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3197166323661804},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.17276501655578613}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6885778307914734},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5942772030830383},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5895361304283142},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5438987612724304},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.49750903248786926},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4940066933631897},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.4526524245738983},{"id":"https://openalex.org/C76249512","wikidata":"https://www.wikidata.org/wiki/Q1206780","display_name":"Device under test","level":3,"score":0.45029446482658386},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.44722312688827515},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44008031487464905},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4242528975009918},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4168374538421631},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.4144930839538574},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.38453200459480286},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.33513790369033813},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3197166323661804},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17276501655578613},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C195266298","wikidata":"https://www.wikidata.org/wiki/Q2165620","display_name":"Scattering parameters","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tie.2017.2669882","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2669882","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8199999928474426}],"awards":[],"funders":[{"id":"https://openalex.org/F4320322526","display_name":"Secretar\u00eda de Educaci\u00f3n Superior, Ciencia, Tecnolog\u00eda e Innovaci\u00f3n","ror":"https://ror.org/056c6e777"},{"id":"https://openalex.org/F4320322569","display_name":"STMicroelectronics","ror":"https://ror.org/00wm3b005"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1641947315","https://openalex.org/W1643335975","https://openalex.org/W1963557645","https://openalex.org/W1963597135","https://openalex.org/W1979062847","https://openalex.org/W2001262230","https://openalex.org/W2019925718","https://openalex.org/W2055234555","https://openalex.org/W2058436119","https://openalex.org/W2072680704","https://openalex.org/W2077900870","https://openalex.org/W2082276872","https://openalex.org/W2110438510","https://openalex.org/W2117712212","https://openalex.org/W2150705456","https://openalex.org/W2150763729","https://openalex.org/W2162827174","https://openalex.org/W2168806982","https://openalex.org/W2553228187","https://openalex.org/W2983203363"],"related_works":["https://openalex.org/W2993176810","https://openalex.org/W2482113690","https://openalex.org/W2082505892","https://openalex.org/W2258872751","https://openalex.org/W2543878150","https://openalex.org/W2186533392","https://openalex.org/W2538025369","https://openalex.org/W2072984677","https://openalex.org/W1561862401","https://openalex.org/W4283220605"],"abstract_inverted_index":{"An":[0],"advanced":[1],"high-temperature":[2],"reverse":[3],"bias":[4],"(HTRB)":[5],"testing":[6],"procedure":[7,193],"for":[8,99,139],"performing":[9],"reliability":[10],"tests":[11],"on":[12,194],"power":[13,196],"transistors":[14],"is":[15,20,36],"reported.":[16],"The":[17,169],"main":[18],"target":[19],"to":[21,43,88,107,122,128],"monitor":[22],"continuously":[23],"the":[24,31,51,71,100,108,119,134,150,159,162,165,184,188,192],"degradation":[25,120],"trend":[26],"of":[27,55,73,92,152,161,164,191],"tested":[28],"devices.":[29,103],"Therefore,":[30],"total":[32],"HTRB":[33,136,171],"test":[34,58,95],"time":[35],"divided":[37],"into":[38],"short":[39],"stress":[40,75],"cycles.":[41],"Thanks":[42],"a":[44,123],"purposely":[45],"designed":[46],"miniature":[47],"heater,":[48],"which":[49,143],"controls":[50],"individual":[52],"case":[53],"temperature":[54],"devices":[56],"under":[57],"(DUTs),":[59],"electrical":[60,82],"characterization,":[61],"at":[62,70],"low":[63,153,175],"or":[64],"high":[65],"temperature,":[66],"can":[67,84,96,115],"be":[68,85,97,116],"performed":[69],"end":[72],"each":[74],"period":[76],"automatically.":[77],"In":[78,104],"this":[79],"way,":[80],"DUT's":[81],"parameters":[83],"periodically":[86],"measured":[87],"identify":[89],"early":[90],"warnings":[91],"failure,":[93],"and":[94,149],"stopped":[98],"sole":[101],"out-of-specification":[102],"addition,":[105],"thanks":[106],"fast":[109],"thermal":[110,112],"control,":[111],"runaway":[113],"processes":[114],"inhibited,":[117],"freezing":[118],"state":[121],"presettled":[124],"level,":[125],"in":[126],"order":[127],"perform":[129],"appropriate":[130],"postfailure":[131],"analysis.":[132],"Finally,":[133],"new":[135],"methodology":[137,172],"allows":[138],"evidencing":[140],"anomalous":[141],"behaviors,":[142],"are":[144,179],"not":[145],"considered":[146],"as":[147,181,183],"failures,":[148],"application":[151,190],"frequency":[154,176],"noise":[155,177],"measure":[156],"techniques":[157],"provides":[158],"evidence":[160],"effects":[163],"applied":[166],"thermo-electrical":[167],"stress.":[168],"proposed":[170],"together":[173],"with":[174],"measurements":[178],"presented":[180],"well":[182],"results":[185],"obtained":[186],"from":[187],"experimental":[189],"silicon":[195],"MOSFETs.":[197]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":1}],"updated_date":"2026-05-07T13:39:58.223016","created_date":"2025-10-10T00:00:00"}