{"id":"https://openalex.org/W2578252526","doi":"https://doi.org/10.1109/tie.2017.2652373","title":"Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode","display_name":"Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode","publication_year":2017,"publication_date":"2017-01-17","ids":{"openalex":"https://openalex.org/W2578252526","doi":"https://doi.org/10.1109/tie.2017.2652373","mag":"2578252526"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2017.2652373","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2652373","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5075299794","display_name":"Qi Zhou","orcid":"https://orcid.org/0000-0002-9265-126X"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qi Zhou","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4210124847"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103414057","display_name":"Yi Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yi Yang","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4210124847"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063008981","display_name":"Kai Hu","orcid":"https://orcid.org/0000-0002-2255-6953"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kai Hu","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4210124847"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101003504","display_name":"Ruopu Zhu","orcid":null},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ruopu Zhu","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4210124847"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032884063","display_name":"Wanjun Chen","orcid":"https://orcid.org/0000-0002-8398-4548"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wanjun Chen","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4210124847"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100320398","display_name":"Bo Zhang","orcid":"https://orcid.org/0000-0003-1288-1549"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bo Zhang","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4210124847"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.953,"has_fulltext":false,"cited_by_count":32,"citation_normalized_percentile":{"value":0.9438153,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":"64","issue":"11","first_page":"8971","last_page":"8979"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6167845726013184},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5184309482574463},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4735024571418762},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4476298391819},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4408002197742462},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4319272041320801},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3401715159416199},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.280889630317688},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09677782654762268}],"concepts":[{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6167845726013184},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5184309482574463},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4735024571418762},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4476298391819},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4408002197742462},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4319272041320801},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3401715159416199},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.280889630317688},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09677782654762268}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tie.2017.2652373","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2017.2652373","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G263226817","display_name":null,"funder_award_id":"61306102","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G3657128495","display_name":"\u5bbd\u7981\u5e26\u534a\u5bfc\u4f53\u5927\u529f\u7387\u7535\u529b\u7535\u5b50\u5668\u4ef6\u7684\u53ef\u9760\u6027\u7814\u7a76","funder_award_id":"61234006","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G5379491844","display_name":null,"funder_award_id":"61674024","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G6501310996","display_name":null,"funder_award_id":"KFJJ201609","funder_id":"https://openalex.org/F4320327035","funder_display_name":"National Key Laboratory of Electronic Thin Films and Integrated Devices"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320327035","display_name":"National Key Laboratory of Electronic Thin Films and Integrated Devices","ror":null}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":45,"referenced_works":["https://openalex.org/W1585540309","https://openalex.org/W1598255599","https://openalex.org/W1607133625","https://openalex.org/W1864244490","https://openalex.org/W1883168124","https://openalex.org/W1925757349","https://openalex.org/W1964535485","https://openalex.org/W1965052718","https://openalex.org/W1965817159","https://openalex.org/W1978424540","https://openalex.org/W1983184103","https://openalex.org/W1986565837","https://openalex.org/W1991842094","https://openalex.org/W1995422653","https://openalex.org/W1998035172","https://openalex.org/W2004873410","https://openalex.org/W2015866014","https://openalex.org/W2017095465","https://openalex.org/W2024121067","https://openalex.org/W2027386377","https://openalex.org/W2067637314","https://openalex.org/W2071602839","https://openalex.org/W2075997516","https://openalex.org/W2082022477","https://openalex.org/W2083964656","https://openalex.org/W2085066220","https://openalex.org/W2090925905","https://openalex.org/W2097049653","https://openalex.org/W2103119574","https://openalex.org/W2114001304","https://openalex.org/W2120465859","https://openalex.org/W2134931326","https://openalex.org/W2139228516","https://openalex.org/W2142541702","https://openalex.org/W2142920076","https://openalex.org/W2143979385","https://openalex.org/W2145947708","https://openalex.org/W2147181763","https://openalex.org/W2158892965","https://openalex.org/W2171042543","https://openalex.org/W2276814997","https://openalex.org/W2488431070","https://openalex.org/W2489901993","https://openalex.org/W2504620247","https://openalex.org/W6636309975"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W3014521742","https://openalex.org/W2617868873","https://openalex.org/W3204141294","https://openalex.org/W4386230336","https://openalex.org/W4306968100","https://openalex.org/W2171986175","https://openalex.org/W2089791793","https://openalex.org/W2038858740","https://openalex.org/W1491218245"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"a":[3,12,52,134],"high":[4,93],"performance":[5],"enhancement-mode":[6],"(E-mode)":[7],"Al2O3/GaN":[8],"hybrid":[9,178],"MOS-HFET":[10,100],"and":[11,65,83,95,122,151,163],"novel":[13],"AlGaN/GaN":[14],"lateral":[15],"diode":[16,146,173],"are":[17,156],"experimentally":[18],"demonstrated.":[19],"Based":[20],"on":[21,106],"the":[22,27,44,56,72,84,91,98,113,116,124,129,145,160,172],"proposed":[23],"approach":[24],"to":[25,71,90,111,158],"engineer":[26],"dielectric/GaN":[28],"positive":[29],"interface":[30],"fixed":[31],"charges":[32],"(Q":[33],"<sub":[34,60,77],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[35,38,61,78,81],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">it</sub>":[36,79],"<sup":[37,80],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">+</sup>":[39,82],")":[40,63],"by":[41,132],"postdielectric":[42],"annealing,":[43],"E-mode":[45,99,177],"metal-oxide-semiconductor":[46],"heterojunction":[47],"field-effect":[48],"transistor":[49],"(MOS-HFET)":[50],"obtains":[51],"better":[53],"tradeoff":[54],"between":[55],"threshold":[57],"voltage":[58,150],"(V":[59],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">TH</sub>":[62],"control":[64],"drain":[66],"current":[67],"drive":[68],"capability":[69],"due":[70],"significant":[73],"suppression":[74],"of":[75,115,138,167],"Q":[76],"associated":[85],"remote":[86],"scattering":[87],"effect.":[88],"Owing":[89],"uniquely":[92],"VTH":[94],"gate":[96,125],"swing,":[97],"exhibits":[101,147],"respectable":[102],"higher":[103],"faulty":[104],"turn":[105],"immunity":[107],"that":[108],"is":[109,174,181],"prone":[110],"improve":[112],"reliability":[114],"device":[117],"in":[118],"power":[119,165,169,187],"switching":[120],"applications":[121],"simplify":[123],"driver":[126],"design.":[127],"On":[128],"other":[130],"hand,":[131],"featuring":[133],"new":[135],"turn-on":[136,149],"mechanism":[137],"MIS-gate-controlled":[139],"2-D":[140],"electron":[141],"gas":[142],"(2DEG)":[143],"channel,":[144],"ultralow":[148],"reverse":[152],"leakage":[153],"current,":[154],"which":[155,180],"beneficial":[157],"lowering":[159],"conduction":[161],"loss":[162],"off-state":[164],"consumption":[166],"GaN-on-Si":[168],"diodes.":[170],"Moreover,":[171],"compatible":[175],"with":[176],"MOS-HFET,":[179],"promising":[182],"for":[183],"realizing":[184],"full-GaN":[185],"single-chip":[186],"ICs.":[188]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":8},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":4}],"updated_date":"2026-07-22T07:51:19.307946","created_date":"2025-10-10T00:00:00"}