{"id":"https://openalex.org/W2037125804","doi":"https://doi.org/10.1109/tie.2015.2414906","title":"A 100-MHz Breakdown-Resilient Power Converter With Fully Monolithic Implementation on Nanoscale CMOS Process","display_name":"A 100-MHz Breakdown-Resilient Power Converter With Fully Monolithic Implementation on Nanoscale CMOS Process","publication_year":2015,"publication_date":"2015-03-20","ids":{"openalex":"https://openalex.org/W2037125804","doi":"https://doi.org/10.1109/tie.2015.2414906","mag":"2037125804"},"language":"en","primary_location":{"id":"doi:10.1109/tie.2015.2414906","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2015.2414906","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043781938","display_name":"Yongtao Geng","orcid":null},"institutions":[{"id":"https://openalex.org/I4210152613","display_name":"Maxim Integrated (United States)","ror":"https://ror.org/056c8b450","country_code":"US","type":"company","lineage":["https://openalex.org/I4210152613"]},{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Yongtao Geng","raw_affiliation_strings":["University of Texas at Dallas, Maxim Integrated Products Inc., Chandler, AZ, USA",", University of Texas at Dallas, Richardson, TX, USA#TAB#"],"affiliations":[{"raw_affiliation_string":"University of Texas at Dallas, Maxim Integrated Products Inc., Chandler, AZ, USA","institution_ids":["https://openalex.org/I4210152613"]},{"raw_affiliation_string":", University of Texas at Dallas, Richardson, TX, USA#TAB#","institution_ids":["https://openalex.org/I162577319"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5073836103","display_name":"Dongsheng Ma","orcid":"https://orcid.org/0009-0002-3918-9632"},"institutions":[{"id":"https://openalex.org/I162577319","display_name":"The University of Texas at Dallas","ror":"https://ror.org/049emcs32","country_code":"US","type":"education","lineage":["https://openalex.org/I162577319"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dongsheng Ma","raw_affiliation_strings":["The University of Texas at Dallas, Richardson, TX, USA",", University of Texas at Dallas, Richardson, TX, USA#TAB#"],"affiliations":[{"raw_affiliation_string":"The University of Texas at Dallas, Richardson, TX, USA","institution_ids":["https://openalex.org/I162577319"]},{"raw_affiliation_string":", University of Texas at Dallas, Richardson, TX, USA#TAB#","institution_ids":["https://openalex.org/I162577319"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5043781938"],"corresponding_institution_ids":["https://openalex.org/I162577319","https://openalex.org/I4210152613"],"apc_list":null,"apc_paid":null,"fwci":0.5918,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.7211573,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"62","issue":"9","first_page":"5529","last_page":"5538"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6757503747940063},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.6474994421005249},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5479082465171814},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.5251928567886353},{"id":"https://openalex.org/keywords/overvoltage","display_name":"Overvoltage","score":0.5200721621513367},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4856032729148865},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.44815006852149963},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3669862151145935},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.36324137449264526},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3554999828338623},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.13950839638710022}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6757503747940063},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6474994421005249},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5479082465171814},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.5251928567886353},{"id":"https://openalex.org/C15703209","wikidata":"https://www.wikidata.org/wiki/Q333883","display_name":"Overvoltage","level":3,"score":0.5200721621513367},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4856032729148865},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.44815006852149963},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3669862151145935},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.36324137449264526},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3554999828338623},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.13950839638710022}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tie.2015.2414906","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tie.2015.2414906","pdf_url":null,"source":{"id":"https://openalex.org/S58031724","display_name":"IEEE Transactions on Industrial Electronics","issn_l":"0278-0046","issn":["0278-0046","1557-9948"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Industrial Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8700000047683716}],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320306087","display_name":"Semiconductor Research Corporation","ror":"https://ror.org/047z4n946"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W958619986","https://openalex.org/W1592319757","https://openalex.org/W1944261027","https://openalex.org/W1968034177","https://openalex.org/W1972427123","https://openalex.org/W1984301507","https://openalex.org/W2014227892","https://openalex.org/W2023692770","https://openalex.org/W2027456206","https://openalex.org/W2055242389","https://openalex.org/W2079442988","https://openalex.org/W2101987266","https://openalex.org/W2128349880","https://openalex.org/W2129218324","https://openalex.org/W2139123152","https://openalex.org/W2142004333","https://openalex.org/W2158374620","https://openalex.org/W2158552598","https://openalex.org/W2164762722","https://openalex.org/W2490302634","https://openalex.org/W2564945682","https://openalex.org/W4205763490","https://openalex.org/W4249053697","https://openalex.org/W4251983349","https://openalex.org/W6679445649"],"related_works":["https://openalex.org/W2953949064","https://openalex.org/W4384067907","https://openalex.org/W2367120910","https://openalex.org/W2943033531","https://openalex.org/W2378606828","https://openalex.org/W1548538914","https://openalex.org/W3008014561","https://openalex.org/W2527522525","https://openalex.org/W2348539758","https://openalex.org/W2050214594"],"abstract_inverted_index":{"A":[0],"monolithic":[1],"switched-capacitor":[2],"power":[3,55,103],"converter":[4],"is":[5,29,59],"designed":[6],"in":[7],"the":[8,36,40,77,108],"nanoscale":[9],"CMOS":[10,79],"technology,":[11],"employing":[12],"a":[13,49,53,66,82,101,126],"two-stage":[14],"system":[15],"architecture":[16],"to":[17],"mitigate":[18],"overvoltage":[19],"breakdown":[20],"risk.":[21],"The":[22,71],"efficiency":[23,104],"impact":[24],"of":[25,85,105],"various":[26],"parasitic":[27],"components":[28],"analyzed":[30],"for":[31],"design":[32,73],"optimization":[33],"on":[34],"both":[35],"topology":[37],"level":[38],"and":[39,52,64,114],"device":[41],"level.":[42],"An":[43],"external":[44],"capacitorless":[45],"low-dropout":[46],"regulator":[47],"with":[48,76,100,125],"wide":[50],"bandwidth":[51],"high":[54],"supply":[56],"rejection":[57],"ratio":[58],"introduced,":[60],"removing":[61],"high-frequency":[62],"ripples":[63],"enabling":[65],"fast":[67],"load":[68,109],"transient":[69],"response.":[70],"proposed":[72],"was":[74],"implemented":[75],"180-nm":[78],"process.":[80],"At":[81],"switching":[83],"frequency":[84],"100":[86],"MHz,":[87],"it":[88],"regulates":[89],"V":[90,96,117],"<sub":[91,97,118],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[92,98,119],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">out</sub>":[93,99,120],"at":[94],"0.8":[95],"maximum":[102],"60%.":[106],"When":[107],"current":[110],"switches":[111],"between":[112],"1.5":[113],"15":[115],"mA,":[116],"responds":[121],"within":[122],"45":[123,130],"ns,":[124],"voltage":[127],"droop":[128],"below":[129],"mV.":[131]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}