{"id":"https://openalex.org/W2568019164","doi":"https://doi.org/10.1109/test.2016.7805834","title":"EMACS: Efficient MBIST architecture for test and characterization of STT-MRAM arrays","display_name":"EMACS: Efficient MBIST architecture for test and characterization of STT-MRAM arrays","publication_year":2016,"publication_date":"2016-11-01","ids":{"openalex":"https://openalex.org/W2568019164","doi":"https://doi.org/10.1109/test.2016.7805834","mag":"2568019164"},"language":"en","primary_location":{"id":"doi:10.1109/test.2016.7805834","is_oa":false,"landing_page_url":"https://doi.org/10.1109/test.2016.7805834","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Test Conference (ITC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009310657","display_name":"Insik Yoon","orcid":"https://orcid.org/0000-0003-4545-4404"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Insik Yoon","raw_affiliation_strings":["School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074910554","display_name":"Ashwin Chintaluri","orcid":null},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ashwin Chintaluri","raw_affiliation_strings":["School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5091408102","display_name":"Arijit Raychowdhury","orcid":"https://orcid.org/0000-0001-8391-0576"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Arijit Raychowdhury","raw_affiliation_strings":["School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical & Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.8221,"has_fulltext":false,"cited_by_count":38,"citation_normalized_percentile":{"value":0.91154791,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":91,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"10"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11222","display_name":"Magnetic Properties and Applications","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.908605694770813},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.7512445449829102},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.567376971244812},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5049107670783997},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.48470044136047363},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.4734891355037689},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40094199776649475},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.3755217492580414},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3709472417831421},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2955165505409241},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2720745801925659},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20525246858596802},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12667331099510193},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.09727349877357483},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07499665021896362}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.908605694770813},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.7512445449829102},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.567376971244812},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5049107670783997},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.48470044136047363},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.4734891355037689},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40094199776649475},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.3755217492580414},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3709472417831421},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2955165505409241},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2720745801925659},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20525246858596802},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12667331099510193},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.09727349877357483},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07499665021896362},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/test.2016.7805834","is_oa":false,"landing_page_url":"https://doi.org/10.1109/test.2016.7805834","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 IEEE International Test Conference (ITC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","id":"https://metadata.un.org/sdg/9","score":0.5400000214576721}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1516501267","https://openalex.org/W1582320800","https://openalex.org/W1909747176","https://openalex.org/W1995771228","https://openalex.org/W1999151859","https://openalex.org/W2012923077","https://openalex.org/W2016073777","https://openalex.org/W2040579068","https://openalex.org/W2047379549","https://openalex.org/W2059323493","https://openalex.org/W2061761071","https://openalex.org/W2075278406","https://openalex.org/W2089301809","https://openalex.org/W2106935654","https://openalex.org/W2108048675","https://openalex.org/W2112388836","https://openalex.org/W2126670409","https://openalex.org/W2150047813","https://openalex.org/W2294313946","https://openalex.org/W2337180699","https://openalex.org/W2626765552","https://openalex.org/W2751603865","https://openalex.org/W2752128027","https://openalex.org/W3152241699","https://openalex.org/W6678966546"],"related_works":["https://openalex.org/W2104937488","https://openalex.org/W2909760123","https://openalex.org/W3088669828","https://openalex.org/W3109940112","https://openalex.org/W2086074825","https://openalex.org/W2964871028","https://openalex.org/W2896073877","https://openalex.org/W3133379968","https://openalex.org/W1549725729","https://openalex.org/W2185474626"],"abstract_inverted_index":{"Spin":[0],"Transfer":[1],"Torque":[2],"Magnetic":[3],"Random":[4],"Access":[5],"Memory":[6],"(STT-MRAM)":[7],"is":[8,53],"an":[9],"emerging":[10,46],"memory":[11,47],"technology":[12],"which":[13,71],"exhibits":[14],"non-volatility,":[15],"high":[16,18],"density,":[17],"endurance":[19],"and":[20,23,42,78,109,125,132,135,145,163,168,177],"nanosecond":[21],"read":[22],"write":[24,77,124],"times.":[25],"These":[26],"attributes":[27],"of":[28,69,88,103,122],"STT-MRAM":[29,89,104,114,129,159],"make":[30],"it":[31],"suitable":[32],"for":[33,45,101,111,150,161],"last":[34],"level":[35],"embedded":[36],"caches.":[37],"However,":[38],"defect":[39],"models,":[40],"faults":[41,138],"test":[43,96,99],"architectures":[44],"technologies":[48,64],"are":[49,139,148,179],"relatively":[50],"unexplored.":[51],"This":[52,116],"further":[54],"aggravated":[55],"by":[56],"the":[57,84,95,136],"fact":[58],"that":[59],"STT-MRAM,":[60],"like":[61],"other":[62],"post-CMOS":[63],"rely":[65],"on":[66,94],"novel":[67,142],"physics":[68],"operation,":[70],"can":[72],"result":[73],"in":[74,128,158],"unexplored":[75],"read,":[76,123],"retention":[79,86,102,126,156],"fault":[80,173],"models.":[81],"In":[82],"particular,":[83],"stochastic":[85],"failure":[87],"has":[90],"a":[91,119],"large":[92,113],"impact":[93],"time.":[97],"Conventional":[98],"schemes":[100],"need":[105],"to":[106],"be":[107],"redesigned":[108],"optimized":[110],"testing":[112],"arrays.":[115,130],"paper":[117],"presents":[118],"comprehensive":[120],"analysis":[121],"tests":[127],"Resistive":[131],"capacitive":[133],"defects":[134],"corresponding":[137],"studied.":[140],"A":[141],"MBIST":[143],"architecture":[144],"associated":[146],"circuits":[147],"presented":[149],"measuring":[151],"thermal":[152],"stability":[153],"(and":[154],"hence":[155],"times)":[157],"bits":[160],"characterization":[162],"manufacturing":[164],"tests,":[165],"amidst":[166],"variations":[167],"magnetic":[169],"coupling.":[170],"Trade-offs":[171],"between":[172],"localization,":[174],"area":[175],"overhead":[176],"test-times":[178],"presented.":[180]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":7},{"year":2020,"cited_by_count":8},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":4}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}