{"id":"https://openalex.org/W2016073777","doi":"https://doi.org/10.1109/test.2014.7035342","title":"Read disturb fault detection in STT-MRAM","display_name":"Read disturb fault detection in STT-MRAM","publication_year":2014,"publication_date":"2014-10-01","ids":{"openalex":"https://openalex.org/W2016073777","doi":"https://doi.org/10.1109/test.2014.7035342","mag":"2016073777"},"language":"en","primary_location":{"id":"doi:10.1109/test.2014.7035342","is_oa":false,"landing_page_url":"https://doi.org/10.1109/test.2014.7035342","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 International Test Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5090692955","display_name":"Rajendra Bishnoi","orcid":"https://orcid.org/0000-0002-0516-7112"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Rajendra Bishnoi","raw_affiliation_strings":["Karlsruhe Institute of Technology, Karlsruhe, Germany","Karlsruhe Institute of Technology, Germany"],"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Karlsruhe Institute of Technology, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110517906","display_name":"Mojtaba Ebrahimi","orcid":null},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Mojtaba Ebrahimi","raw_affiliation_strings":["Karlsruhe Institute of Technology, Karlsruhe, Germany","Karlsruhe Institute of Technology, Germany"],"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Karlsruhe Institute of Technology, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064797552","display_name":"Fabian Oboril","orcid":"https://orcid.org/0000-0002-2647-4824"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Fabian Oboril","raw_affiliation_strings":["Karlsruhe Institute of Technology, Karlsruhe, Germany","Karlsruhe Institute of Technology, Germany"],"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Karlsruhe Institute of Technology, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064445713","display_name":"Mehdi B. Tahoori","orcid":"https://orcid.org/0000-0002-8829-5610"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Mehdi B. Tahoori","raw_affiliation_strings":["Karlsruhe Institute of Technology, Karlsruhe, Germany","Karlsruhe Institute of Technology, Germany"],"affiliations":[{"raw_affiliation_string":"Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]},{"raw_affiliation_string":"Karlsruhe Institute of Technology, Germany","institution_ids":["https://openalex.org/I102335020"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5090692955"],"corresponding_institution_ids":["https://openalex.org/I102335020"],"apc_list":null,"apc_paid":null,"fwci":4.3581,"has_fulltext":false,"cited_by_count":68,"citation_normalized_percentile":{"value":0.94682118,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9973000288009644,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.7830316424369812},{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.7419306039810181},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.7345775365829468},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.5900084376335144},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5481945276260376},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4584197402000427},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.45648524165153503},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.4451172947883606},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.4368460774421692},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.4266423285007477},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40478014945983887},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.36858659982681274},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.36029714345932007},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.32743072509765625},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.25232645869255066},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2201925814151764},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13155820965766907},{"id":"https://openalex.org/keywords/magnetization","display_name":"Magnetization","score":0.10558757185935974}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.7830316424369812},{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.7419306039810181},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.7345775365829468},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.5900084376335144},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5481945276260376},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4584197402000427},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.45648524165153503},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.4451172947883606},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.4368460774421692},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.4266423285007477},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40478014945983887},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36858659982681274},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.36029714345932007},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.32743072509765625},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.25232645869255066},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2201925814151764},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13155820965766907},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.10558757185935974},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/test.2014.7035342","is_oa":false,"landing_page_url":"https://doi.org/10.1109/test.2014.7035342","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 International Test Conference","raw_type":"proceedings-article"},{"id":"pmh:oai:CiteSeerX.psu:10.1.1.704.1063","is_oa":false,"landing_page_url":"http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.704.1063","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://cdnc.itec.kit.edu/downloads/Papers/Bishnoi14ITC.pdf","raw_type":"text"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6499999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":32,"referenced_works":["https://openalex.org/W1482804539","https://openalex.org/W1560722379","https://openalex.org/W1898890050","https://openalex.org/W1967547265","https://openalex.org/W1972350236","https://openalex.org/W1977072728","https://openalex.org/W1983562124","https://openalex.org/W1987072014","https://openalex.org/W2001108445","https://openalex.org/W2006291936","https://openalex.org/W2008904077","https://openalex.org/W2010202670","https://openalex.org/W2010216838","https://openalex.org/W2013984675","https://openalex.org/W2014178805","https://openalex.org/W2019833471","https://openalex.org/W2020398077","https://openalex.org/W2037904537","https://openalex.org/W2054168857","https://openalex.org/W2103498248","https://openalex.org/W2116344741","https://openalex.org/W2150047813","https://openalex.org/W2157587823","https://openalex.org/W2157808188","https://openalex.org/W3150611138","https://openalex.org/W3152241699","https://openalex.org/W4244096863","https://openalex.org/W4244242927","https://openalex.org/W6628817683","https://openalex.org/W6633511770","https://openalex.org/W6652408048","https://openalex.org/W6677325608"],"related_works":["https://openalex.org/W4388285079","https://openalex.org/W2076211355","https://openalex.org/W2546997659","https://openalex.org/W2733919783","https://openalex.org/W2425808153","https://openalex.org/W2404332818","https://openalex.org/W4235980920","https://openalex.org/W2533127403","https://openalex.org/W2342993049","https://openalex.org/W4387872710"],"abstract_inverted_index":{"Spin":[0],"Transfer":[1],"Torque":[2],"Magnetic":[3],"Random":[4],"Access":[5],"Memory":[6],"(STT-MRAM)":[7],"has":[8],"potential":[9],"to":[10,48,71,84],"become":[11],"a":[12,37,43,49,81],"universal":[13],"memory":[14],"technology":[15,67],"because":[16,51],"of":[17,111],"its":[18],"various":[19],"advantageous":[20],"features":[21],"such":[22],"as":[23,69],"high":[24,28],"density,":[25],"non-volatility,":[26],"scalability,":[27],"endurance":[29],"and":[30,53,114],"CMOS":[31],"compatibility.":[32],"However,":[33],"read":[34,44,52,70,86,94,106],"disturb":[35,87,107],"is":[36,64],"major":[38,61],"reliability":[39,62],"issue":[40],"in":[41],"which":[42],"operation":[45],"can":[46,103],"lead":[47],"bitflip,":[50],"write":[54,72],"current":[55,73,91],"share":[56],"the":[57,90,93,100,109],"same":[58],"path.":[59],"This":[60],"challenge":[63],"growing":[65],"with":[66],"scaling":[68],"ratio":[74],"decreases.":[75],"In":[76],"this":[77],"paper,":[78],"we":[79],"propose":[80],"circuit-level":[82],"technique":[83,102],"detect":[85,105],"by":[88],"sensing":[89],"during":[92],"operation.":[95],"Experimental":[96],"results":[97],"show":[98],"that":[99],"proposed":[101],"effectively":[104],"at":[108],"cost":[110],"negligible":[112],"power":[113],"area":[115],"overhead.":[116]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":8},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":8},{"year":2019,"cited_by_count":9},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":7},{"year":2016,"cited_by_count":11},{"year":2015,"cited_by_count":2}],"updated_date":"2026-04-05T17:49:38.594831","created_date":"2025-10-10T00:00:00"}