{"id":"https://openalex.org/W1980722755","doi":"https://doi.org/10.1109/test.2008.4700616","title":"Direct Cell-Stability Test Techniques for an SRAM Macro with Asymmetric Cell-Bias-Voltage Modulation","display_name":"Direct Cell-Stability Test Techniques for an SRAM Macro with Asymmetric Cell-Bias-Voltage Modulation","publication_year":2008,"publication_date":"2008-10-01","ids":{"openalex":"https://openalex.org/W1980722755","doi":"https://doi.org/10.1109/test.2008.4700616","mag":"1980722755"},"language":"en","primary_location":{"id":"doi:10.1109/test.2008.4700616","is_oa":false,"landing_page_url":"https://doi.org/10.1109/test.2008.4700616","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 IEEE International Test Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5052834881","display_name":"A. Katayama","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"A. Katayama","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","Semicond. Co., Toshiba Corp, Kawasaki"],"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Semicond. Co., Toshiba Corp, Kawasaki","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054331498","display_name":"Tomoaki Yabe","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Yabe","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","Semicond. Co., Toshiba Corp, Kawasaki"],"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Semicond. Co., Toshiba Corp, Kawasaki","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013755323","display_name":"Osamu Hirabayashi","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"O. Hirabayashi","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","Semicond. Co., Toshiba Corp, Kawasaki"],"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Semicond. Co., Toshiba Corp, Kawasaki","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032269766","display_name":"Y. Takeyama","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Takeyama","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","Semicond. Co., Toshiba Corp, Kawasaki"],"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Semicond. Co., Toshiba Corp, Kawasaki","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044735538","display_name":"K. Kushida","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Kushida","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","Semicond. Co., Toshiba Corp, Kawasaki"],"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Semicond. Co., Toshiba Corp, Kawasaki","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047992866","display_name":"Tadahiro Sasaki","orcid":"https://orcid.org/0000-0003-3473-3803"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Sasaki","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","Semicond. Co., Toshiba Corp, Kawasaki"],"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Semicond. Co., Toshiba Corp, Kawasaki","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5072371146","display_name":"N. Otsuka","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"N. Otsuka","raw_affiliation_strings":["Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","Semicond. Co., Toshiba Corp, Kawasaki"],"affiliations":[{"raw_affiliation_string":"Semiconductor Company, Toshiba Corporation, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Semicond. Co., Toshiba Corp, Kawasaki","institution_ids":["https://openalex.org/I1292669757"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5052834881"],"corresponding_institution_ids":["https://openalex.org/I1292669757"],"apc_list":null,"apc_paid":null,"fwci":0.3329,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.61175568,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7429172396659851},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.7189878225326538},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5870051980018616},{"id":"https://openalex.org/keywords/macro","display_name":"Macro","score":0.5243942141532898},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5043333768844604},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.4845268130302429},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.4554665684700012},{"id":"https://openalex.org/keywords/modulation","display_name":"Modulation (music)","score":0.44589143991470337},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.4447668194770813},{"id":"https://openalex.org/keywords/metric","display_name":"Metric (unit)","score":0.4393012225627899},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4197884798049927},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3346138596534729},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.29093149304389954},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.2768295109272003},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24659058451652527},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19965404272079468},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.19457456469535828}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7429172396659851},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.7189878225326538},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5870051980018616},{"id":"https://openalex.org/C166955791","wikidata":"https://www.wikidata.org/wiki/Q629579","display_name":"Macro","level":2,"score":0.5243942141532898},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5043333768844604},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.4845268130302429},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.4554665684700012},{"id":"https://openalex.org/C123079801","wikidata":"https://www.wikidata.org/wiki/Q750240","display_name":"Modulation (music)","level":2,"score":0.44589143991470337},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.4447668194770813},{"id":"https://openalex.org/C176217482","wikidata":"https://www.wikidata.org/wiki/Q860554","display_name":"Metric (unit)","level":2,"score":0.4393012225627899},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4197884798049927},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3346138596534729},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.29093149304389954},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.2768295109272003},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24659058451652527},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19965404272079468},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19457456469535828},{"id":"https://openalex.org/C21547014","wikidata":"https://www.wikidata.org/wiki/Q1423657","display_name":"Operations management","level":1,"score":0.0},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/test.2008.4700616","is_oa":false,"landing_page_url":"https://doi.org/10.1109/test.2008.4700616","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 IEEE International Test Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6800000071525574,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1498337395","https://openalex.org/W1759929813","https://openalex.org/W2002612140","https://openalex.org/W2121294303","https://openalex.org/W2128563080","https://openalex.org/W2154477062","https://openalex.org/W2161648718","https://openalex.org/W2545471485","https://openalex.org/W3146563601"],"related_works":["https://openalex.org/W1999919743","https://openalex.org/W2081382200","https://openalex.org/W4398784231","https://openalex.org/W2100282217","https://openalex.org/W2157278395","https://openalex.org/W2164047446","https://openalex.org/W4388836178","https://openalex.org/W2096191509","https://openalex.org/W2031972468","https://openalex.org/W1510452813"],"abstract_inverted_index":{"In":[0,17],"this":[1],"paper":[2],"we":[3],"propose":[4],"a":[5,44,55],"new":[6],"metric":[7],"of":[8,43,50,54,60,89,92,113],"SRAM":[9,100,116],"cell":[10,56],"stability":[11,90],"named":[12],"static":[13,74],"cell-flip":[14],"voltage":[15,59],"(SCFV).":[16],"order":[18],"to":[19,48,84],"measure":[20],"SCFV,":[21],"novel":[22],"design-for-test":[23],"(DFT)":[24],"techniques":[25,80],"with":[26,40,72,106,117,124],"asymmetric":[27],"cell-bias-voltage":[28],"modulation":[29],"(ACBVM)":[30],"are":[31],"introduced,":[32],"in":[33,96],"which":[34,102],"the":[35,51],"cell-data":[36],"retention":[37],"is":[38,65],"measured":[39,111],"sweeping":[41],"potential":[42],"ground":[45],"node":[46],"connected":[47],"one":[49],"cross-coupled":[52],"invertors":[53],"and":[57],"source":[58],"PMOS":[61],"loads":[62],"swept.":[63],"It":[64],"shown":[66],"that":[67],"SCFV":[68],"has":[69,103],"high":[70],"correlation":[71],"conventional":[73,107],"noise":[75],"margin":[76],"(SNM).":[77],"The":[78,110],"proposed":[79],"make":[81],"it":[82],"possible":[83],"directly":[85],"obtain":[86],"large":[87],"amounts":[88],"data":[91,112],"memory":[93],"cells":[94],"arranged":[95],"matrix":[97],"for":[98],"an":[99],"macro,":[101],"been":[104],"difficult":[105],"SNM":[108],"measurements.":[109],"1":[114],"Kb":[115],"65":[118],"nm":[119],"technology":[120],"show":[121],"good":[122],"correspondence":[123],"simulated":[125],"results.":[126]},"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}