{"id":"https://openalex.org/W2127478143","doi":"https://doi.org/10.1109/test.2008.4700556","title":"Analysis of Retention Time Distribution of Embedded DRAM - A New Method to Characterize Across-Chip Threshold Voltage Variation","display_name":"Analysis of Retention Time Distribution of Embedded DRAM - A New Method to Characterize Across-Chip Threshold Voltage Variation","publication_year":2008,"publication_date":"2008-10-01","ids":{"openalex":"https://openalex.org/W2127478143","doi":"https://doi.org/10.1109/test.2008.4700556","mag":"2127478143"},"language":"en","primary_location":{"id":"doi:10.1109/test.2008.4700556","is_oa":false,"landing_page_url":"https://doi.org/10.1109/test.2008.4700556","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 IEEE International Test Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051733717","display_name":"Weiran Kong","orcid":"https://orcid.org/0000-0003-3081-0306"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"W. Kong","raw_affiliation_strings":["IBM Semiconductor Research and Development Center, NY, USA","IBM Semicond. R&D Center, Hopewell, VA"],"affiliations":[{"raw_affiliation_string":"IBM Semiconductor Research and Development Center, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Semicond. R&D Center, Hopewell, VA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025095320","display_name":"P. Parries","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P.C. Parries","raw_affiliation_strings":["IBM Semiconductor Research and Development Center, NY, USA","IBM Semicond. R&D Center, Hopewell, VA"],"affiliations":[{"raw_affiliation_string":"IBM Semiconductor Research and Development Center, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Semicond. R&D Center, Hopewell, VA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086511753","display_name":"G. Wang","orcid":"https://orcid.org/0009-0004-9260-4713"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G. Wang","raw_affiliation_strings":["IBM Semiconductor Research and Development Center, NY, USA","IBM Semicond. R&D Center, Hopewell, VA"],"affiliations":[{"raw_affiliation_string":"IBM Semiconductor Research and Development Center, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Semicond. R&D Center, Hopewell, VA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5091022757","display_name":"Subramanian S. Iyer","orcid":"https://orcid.org/0000-0003-1220-031X"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S.S. Iyer","raw_affiliation_strings":["IBM Semiconductor Research and Development Center, NY, USA","IBM Semicond. R&D Center, Hopewell, VA"],"affiliations":[{"raw_affiliation_string":"IBM Semiconductor Research and Development Center, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Semicond. R&D Center, Hopewell, VA","institution_ids":["https://openalex.org/I1341412227"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5051733717"],"corresponding_institution_ids":["https://openalex.org/I1341412227"],"apc_list":null,"apc_paid":null,"fwci":1.3318,"has_fulltext":false,"cited_by_count":32,"citation_normalized_percentile":{"value":0.82231486,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.7436482906341553},{"id":"https://openalex.org/keywords/parametric-statistics","display_name":"Parametric statistics","score":0.48027849197387695},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.47505995631217957},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4536825716495514},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2593495845794678},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.24009469151496887},{"id":"https://openalex.org/keywords/statistics","display_name":"Statistics","score":0.10579562187194824},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.09340605139732361}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7436482906341553},{"id":"https://openalex.org/C117251300","wikidata":"https://www.wikidata.org/wiki/Q1849855","display_name":"Parametric statistics","level":2,"score":0.48027849197387695},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.47505995631217957},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4536825716495514},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2593495845794678},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.24009469151496887},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.10579562187194824},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.09340605139732361}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/test.2008.4700556","is_oa":false,"landing_page_url":"https://doi.org/10.1109/test.2008.4700556","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2008 IEEE International Test Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1537380896","https://openalex.org/W1661368752","https://openalex.org/W1759929813","https://openalex.org/W1994644639","https://openalex.org/W2023834387","https://openalex.org/W2038355886","https://openalex.org/W2089505570","https://openalex.org/W2104010258","https://openalex.org/W2105631466","https://openalex.org/W2119435553","https://openalex.org/W2142718365","https://openalex.org/W2152154820","https://openalex.org/W2159253302","https://openalex.org/W2168101540","https://openalex.org/W2168559772","https://openalex.org/W4210341450"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W3120961607","https://openalex.org/W2098207691","https://openalex.org/W3148568549","https://openalex.org/W1648516568","https://openalex.org/W361036515","https://openalex.org/W2269474412","https://openalex.org/W4386903460","https://openalex.org/W4211178602","https://openalex.org/W2537599394"],"abstract_inverted_index":{"In":[0],"this":[1,46],"paper,":[2],"we":[3,48],"investigate":[4],"the":[5,21,31,83,92,128],"retention":[6,28,32,84,129],"time":[7],"distribution":[8,33],"of":[9,55,72,120,132],"IBM's":[10],"65nm":[11],"node":[12],"embedded":[13],"DRAM.":[14],"We":[15],"demonstrate":[16],"that":[17,25],"subthreshold":[18],"current":[19],"is":[20,99,134],"dominant":[22],"leakage":[23],"mechanism":[24],"determines":[26],"data":[27],"time,":[29],"and":[30,69,101,116,130],"can":[34,102],"be":[35,103],"attributed":[36],"to":[37,105],"array":[38,78,121],"V":[39,57,63,107,122],"<sub":[40,58,64,108,123],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[41,59,65,109,124],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">t</sub>":[42,60,66,110,125],"variation.":[43,61],"Based":[44],"on":[45,127],"study,":[47],"present":[49],"a":[50],"new":[51],"technique":[52],"for":[53],"characterization":[54],"across-chip":[56],"The":[62,86,96,118],"median":[67],"value":[68],"standard":[70],"deviation":[71],"transfer":[73],"devices":[74],"within":[75],"an":[76],"eDRAM":[77,133],"are":[79,89],"estimated":[80],"by":[81,91],"analyzing":[82],"characteristics.":[85],"evaluation":[87],"results":[88],"confirmed":[90],"parametric":[93],"test":[94],"data.":[95],"proposed":[97],"method":[98],"fast":[100],"used":[104],"monitor":[106],"variation":[111],"in":[112],"both":[113],"technology":[114],"development":[115],"manufacture.":[117],"impact":[119],"spread":[126],"performance":[131],"discussed.":[135]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":4}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}