{"id":"https://openalex.org/W2117976719","doi":"https://doi.org/10.1109/test.2004.1386944","title":"MRAM defect analysis and fault modeling","display_name":"MRAM defect analysis and fault modeling","publication_year":2005,"publication_date":"2005-03-21","ids":{"openalex":"https://openalex.org/W2117976719","doi":"https://doi.org/10.1109/test.2004.1386944","mag":"2117976719"},"language":"en","primary_location":{"id":"doi:10.1109/test.2004.1386944","is_oa":false,"landing_page_url":"https://doi.org/10.1109/test.2004.1386944","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2004 International Conferce on Test","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110211418","display_name":"Chin-Lung Su","orcid":null},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Chin-Lung Su","raw_affiliation_strings":["Department of Electrical Engineering, National Tsing Hua University, Hsinchu, ROC"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Tsing Hua University, Hsinchu, ROC","institution_ids":["https://openalex.org/I25846049"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051484648","display_name":"Rei-Fu Huang","orcid":null},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Rei-Fu Huang","raw_affiliation_strings":["Department of Electrical Engineering, National Tsing Hua University, Hsinchu, ROC"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Tsing Hua University, Hsinchu, ROC","institution_ids":["https://openalex.org/I25846049"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075548524","display_name":"Cheng\u2010Wen Wu","orcid":"https://orcid.org/0000-0001-8614-7908"},"institutions":[{"id":"https://openalex.org/I25846049","display_name":"National Tsing Hua University","ror":"https://ror.org/00zdnkx70","country_code":"TW","type":"education","lineage":["https://openalex.org/I25846049"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Cheng-Wen Wu","raw_affiliation_strings":["Department of Electrical Engineering, National Tsing Hua University, Hsinchu, ROC"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Tsing Hua University, Hsinchu, ROC","institution_ids":["https://openalex.org/I25846049"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054470933","display_name":"Chien\u2010Ching Hung","orcid":"https://orcid.org/0000-0001-7345-0836"},"institutions":[{"id":"https://openalex.org/I142066694","display_name":"ITRI International","ror":"https://ror.org/04wwsbd59","country_code":"US","type":"facility","lineage":["https://openalex.org/I142066694"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chien-Chung Hung","raw_affiliation_strings":["Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu, ROC"],"affiliations":[{"raw_affiliation_string":"Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu, ROC","institution_ids":["https://openalex.org/I142066694"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080130969","display_name":"Ming\u2010Jer Kao","orcid":"https://orcid.org/0000-0003-3401-5238"},"institutions":[{"id":"https://openalex.org/I142066694","display_name":"ITRI International","ror":"https://ror.org/04wwsbd59","country_code":"US","type":"facility","lineage":["https://openalex.org/I142066694"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ming-Jer Kao","raw_affiliation_strings":["Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu, ROC"],"affiliations":[{"raw_affiliation_string":"Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu, ROC","institution_ids":["https://openalex.org/I142066694"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105618317","display_name":"Yeong-Jar Chang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210148468","display_name":"Industrial Technology Research Institute","ror":"https://ror.org/05szzwt63","country_code":"TW","type":"nonprofit","lineage":["https://openalex.org/I4210148468"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yeong-Jar Chang","raw_affiliation_strings":["SoC Technology Center Industrial Technology, Research Institute, Hsinchu, ROC","SoC Technology Center, Industrial Technology and Research Institute, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"SoC Technology Center Industrial Technology, Research Institute, Hsinchu, ROC","institution_ids":["https://openalex.org/I4210148468"]},{"raw_affiliation_string":"SoC Technology Center, Industrial Technology and Research Institute, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210148468"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5067711220","display_name":"Wen-Ching Wu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210148468","display_name":"Industrial Technology Research Institute","ror":"https://ror.org/05szzwt63","country_code":"TW","type":"nonprofit","lineage":["https://openalex.org/I4210148468"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Wen-Ching Wu","raw_affiliation_strings":["SoC Technology Center Industrial Technology, Research Institute, Hsinchu, ROC"],"affiliations":[{"raw_affiliation_string":"SoC Technology Center Industrial Technology, Research Institute, Hsinchu, ROC","institution_ids":["https://openalex.org/I4210148468"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5110211418"],"corresponding_institution_ids":["https://openalex.org/I25846049"],"apc_list":null,"apc_paid":null,"fwci":2.9039,"has_fulltext":false,"cited_by_count":31,"citation_normalized_percentile":{"value":0.90896618,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"124","last_page":"133"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.9127995371818542},{"id":"https://openalex.org/keywords/eeprom","display_name":"EEPROM","score":0.8334946036338806},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.5583855509757996},{"id":"https://openalex.org/keywords/fault","display_name":"Fault (geology)","score":0.5539372563362122},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5522916316986084},{"id":"https://openalex.org/keywords/non-volatile-random-access-memory","display_name":"Non-volatile random-access memory","score":0.531764805316925},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.47372761368751526},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.4649098813533783},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.44403451681137085},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.4232722520828247},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.3379806876182556},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.28599220514297485},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.24337908625602722},{"id":"https://openalex.org/keywords/memory-refresh","display_name":"Memory refresh","score":0.23327642679214478},{"id":"https://openalex.org/keywords/computer-memory","display_name":"Computer memory","score":0.22063302993774414},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15905508399009705}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.9127995371818542},{"id":"https://openalex.org/C27699510","wikidata":"https://www.wikidata.org/wiki/Q205908","display_name":"EEPROM","level":2,"score":0.8334946036338806},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.5583855509757996},{"id":"https://openalex.org/C175551986","wikidata":"https://www.wikidata.org/wiki/Q47089","display_name":"Fault (geology)","level":2,"score":0.5539372563362122},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5522916316986084},{"id":"https://openalex.org/C34172316","wikidata":"https://www.wikidata.org/wiki/Q499024","display_name":"Non-volatile random-access memory","level":5,"score":0.531764805316925},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.47372761368751526},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.4649098813533783},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.44403451681137085},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.4232722520828247},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.3379806876182556},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.28599220514297485},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.24337908625602722},{"id":"https://openalex.org/C87907426","wikidata":"https://www.wikidata.org/wiki/Q6815755","display_name":"Memory refresh","level":4,"score":0.23327642679214478},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.22063302993774414},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15905508399009705},{"id":"https://openalex.org/C165205528","wikidata":"https://www.wikidata.org/wiki/Q83371","display_name":"Seismology","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/test.2004.1386944","is_oa":false,"landing_page_url":"https://doi.org/10.1109/test.2004.1386944","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2004 International Conferce on Test","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Peace, Justice and strong institutions","id":"https://metadata.un.org/sdg/16","score":0.47999998927116394}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W1539098685","https://openalex.org/W1852327444","https://openalex.org/W1867964029","https://openalex.org/W1956019682","https://openalex.org/W2005450058","https://openalex.org/W2017569700","https://openalex.org/W2021130660","https://openalex.org/W2036656747","https://openalex.org/W2050885067","https://openalex.org/W2106935654","https://openalex.org/W2110266982","https://openalex.org/W2111985228","https://openalex.org/W2113358566","https://openalex.org/W2121842885","https://openalex.org/W2125112575","https://openalex.org/W2126670409","https://openalex.org/W2127380252","https://openalex.org/W2127921874","https://openalex.org/W2129179754","https://openalex.org/W2157571503","https://openalex.org/W2161390709","https://openalex.org/W2165615559","https://openalex.org/W4235175930","https://openalex.org/W6632452432","https://openalex.org/W6651651375","https://openalex.org/W6663353418","https://openalex.org/W6678258098","https://openalex.org/W6678966546","https://openalex.org/W6683403585"],"related_works":["https://openalex.org/W2534994001","https://openalex.org/W2510382096","https://openalex.org/W4234756210","https://openalex.org/W2032705268","https://openalex.org/W2315140189","https://openalex.org/W1485591242","https://openalex.org/W1977963439","https://openalex.org/W2505369450","https://openalex.org/W311183906","https://openalex.org/W1993178305"],"abstract_inverted_index":{"With":[0],"the":[1,6,24,38,59,91,139,142,152,158,167,172,179,182,186,196],"advent":[2],"of":[3,23,61,76,108,117,151,178],"system-on-chip":[4],"(SOC),":[5],"demand":[7],"for":[8,53,72],"embedded":[9],"memory":[10,18],"cores":[11],"increases":[12],"rapidly.":[13],"The":[14,40,74,122,135,162],"magnetic":[15],"random":[16],"access":[17],"(MRAM)":[19],"is":[20],"considered":[21],"one":[22],"potential":[25],"candidates":[26],"that":[27,149,171],"replace":[28],"current":[29],"on-chip":[30],"memories":[31],"(RAM,":[32],"EEPROM,":[33],"and":[34,46,63,89,94,97,111,115,127,144,199],"flash":[35,64],"memory)":[36],"in":[37],"future.":[39],"MRAM":[41,92,109,120],"has":[42,58,79,124],"a":[43,68,105,118,130],"high":[44,50],"speed":[45],"does":[47],"not":[48,80],"need":[49],"supply":[51],"voltage":[52],"read/write":[54],"operations,":[55],"so":[56],"it":[57,67],"advantages":[60],"RAM":[62],"memory,":[65],"making":[66],"potentially":[69],"good":[70],"choice":[71],"SOC.":[73],"testing":[75],"MRAM,":[77],"however,":[78],"been":[81,125],"fully":[82],"investigated.":[83],"In":[84],"this":[85],"work":[86],"we":[87,188],"classify":[88],"analyze":[90],"defects":[93,143,153,180],"their":[95],"behavior,":[96],"propose":[98],"its":[99],"fault":[100,146,160,198],"models.":[101],"We":[102],"have":[103,190],"built":[104],"SPICE":[106],"model":[107],"cell":[110],"performed":[112],"defect":[113],"injection":[114],"simulation":[116,136],"real":[119],"circuit.":[121],"circuit":[123],"implemented":[126],"fabricated":[128,168],"with":[129],"novel":[131],"0.18":[132],"m":[133],"technology.":[134],"results":[137],"regarding":[138],"correlation":[140],"between":[141],"conventional":[145],"models":[147],"show":[148,170],"most":[150,177],"can":[154],"be":[155],"covered":[156],"by":[157],"stuck-at":[159,173],"model.":[161],"test":[163],"data":[164],"based":[165],"on":[166,181],"chips":[169],"faults":[174],"do":[175],"cover":[176],"chips.":[183],"However,":[184],"from":[185],"experiment":[187],"also":[189],"identified":[191],"two":[192],"new":[193],"faults,":[194],"i.e.,":[195],"Multi-Victims":[197],"Kink":[200],"fault.":[201]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2012,"cited_by_count":4}],"updated_date":"2026-04-21T08:09:41.155169","created_date":"2025-10-10T00:00:00"}