{"id":"https://openalex.org/W2137985592","doi":"https://doi.org/10.1109/test.2002.1041821","title":"Redundancy implications for early-life reliability: experimental verification of an integrated yield-reliability model","display_name":"Redundancy implications for early-life reliability: experimental verification of an integrated yield-reliability model","publication_year":2003,"publication_date":"2003-06-25","ids":{"openalex":"https://openalex.org/W2137985592","doi":"https://doi.org/10.1109/test.2002.1041821","mag":"2137985592"},"language":"en","primary_location":{"id":"doi:10.1109/test.2002.1041821","is_oa":false,"landing_page_url":"https://doi.org/10.1109/test.2002.1041821","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings. International Test Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5036681005","display_name":"T.S. Barnett","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"T.S. Barnett","raw_affiliation_strings":["Logic Test Division, IBM Microelectronics, Essex Junction, VT, USA","Logic Test Div., IBM Microeletronics, Essex Junction, VT, USA"],"affiliations":[{"raw_affiliation_string":"Logic Test Division, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"Logic Test Div., IBM Microeletronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075745218","display_name":"M. Grady","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Grady","raw_affiliation_strings":["Logic Test Division, IBM Microelectronics, Essex Junction, VT, USA","Logic Test Div., IBM Microeletronics, Essex Junction, VT, USA"],"affiliations":[{"raw_affiliation_string":"Logic Test Division, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"Logic Test Div., IBM Microeletronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032296241","display_name":"K. Purdy","orcid":null},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. Purdy","raw_affiliation_strings":["Logic Test Division, IBM Microelectronics, Essex Junction, VT, USA","Logic Test Div., IBM Microeletronics, Essex Junction, VT, USA"],"affiliations":[{"raw_affiliation_string":"Logic Test Division, IBM Microelectronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"Logic Test Div., IBM Microeletronics, Essex Junction, VT, USA","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5014114241","display_name":"A.D. Singh","orcid":"https://orcid.org/0000-0001-5649-8483"},"institutions":[{"id":"https://openalex.org/I82497590","display_name":"Auburn University","ror":"https://ror.org/02v80fc35","country_code":"US","type":"education","lineage":["https://openalex.org/I82497590"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A.D. Singh","raw_affiliation_strings":["Electrical and Computer Engineering, Aubum University, Auburn, AL, USA","Auburn.University"],"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, Aubum University, Auburn, AL, USA","institution_ids":["https://openalex.org/I82497590"]},{"raw_affiliation_string":"Auburn.University","institution_ids":["https://openalex.org/I82497590"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5036681005"],"corresponding_institution_ids":["https://openalex.org/I1341412227"],"apc_list":null,"apc_paid":null,"fwci":2.124,"has_fulltext":false,"cited_by_count":19,"citation_normalized_percentile":{"value":0.87830544,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"693","last_page":"699"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10780","display_name":"Reliability and Maintenance Optimization","score":0.9968000054359436,"subfield":{"id":"https://openalex.org/subfields/2213","display_name":"Safety, Risk, Reliability and Quality"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.7397864460945129},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.7115663886070251},{"id":"https://openalex.org/keywords/redundancy","display_name":"Redundancy (engineering)","score":0.6629863381385803},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6481499671936035},{"id":"https://openalex.org/keywords/megabit","display_name":"Megabit","score":0.5368216037750244},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.5171398520469666},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.45976749062538147},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4176059067249298},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.41376906633377075},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3120642900466919},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.2878293991088867},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.12869733572006226},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.11318343877792358}],"concepts":[{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.7397864460945129},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7115663886070251},{"id":"https://openalex.org/C152124472","wikidata":"https://www.wikidata.org/wiki/Q1204361","display_name":"Redundancy (engineering)","level":2,"score":0.6629863381385803},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6481499671936035},{"id":"https://openalex.org/C185177783","wikidata":"https://www.wikidata.org/wiki/Q3332814","display_name":"Megabit","level":2,"score":0.5368216037750244},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.5171398520469666},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.45976749062538147},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4176059067249298},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.41376906633377075},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3120642900466919},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.2878293991088867},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.12869733572006226},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.11318343877792358},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/test.2002.1041821","is_oa":false,"landing_page_url":"https://doi.org/10.1109/test.2002.1041821","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings. International Test Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W2021792911","https://openalex.org/W2027664892","https://openalex.org/W2046045084","https://openalex.org/W2058522659","https://openalex.org/W2115243262","https://openalex.org/W2121851408","https://openalex.org/W2122191042","https://openalex.org/W2129892046","https://openalex.org/W2132751984","https://openalex.org/W2137529661","https://openalex.org/W2137926373","https://openalex.org/W2158747400","https://openalex.org/W2170416225","https://openalex.org/W2231973936"],"related_works":["https://openalex.org/W2155719671","https://openalex.org/W3148726441","https://openalex.org/W2138592424","https://openalex.org/W2469229085","https://openalex.org/W2542548909","https://openalex.org/W1983214964","https://openalex.org/W2467408428","https://openalex.org/W2082547827","https://openalex.org/W1552191932","https://openalex.org/W2154754646"],"abstract_inverted_index":{"This":[0,134],"paper":[1],"validates":[2],"an":[3,24],"integrated":[4,92],"yield-reliability":[5,54,154],"model":[6,55,58],"for":[7,80],"redundant":[8],"memory":[9,21],"using":[10],"yield":[11],"and":[12,23,40,47],"stress":[13,46,77,127,157],"test":[14,39,78,158],"data":[15],"from":[16],"a":[17,81,84,105],"36":[18],"Mbit":[19,26],"SRAM":[20],"chip":[22],"8":[25],"embedded":[27],"DRAM":[28],"chip.":[29],"In":[30,144],"both":[31],"cases,":[32],"those":[33],"chips":[34],"determined":[35],"functional":[36],"following":[37],"wafer":[38],"repair":[41],"were":[42],"subjected":[43],"to":[44,95,125,164,177,180],"voltage":[45],"burn-in.":[48],"It":[49],"is":[50,161,174],"shown":[51],"that":[52,101],"the":[53,61,74,137,153,156,165,169,178,185],"can":[56],"accurately":[57],"not":[59],"only":[60],"fraction":[62],"of":[63,76,87,108,141,167,171],"die":[64,82,103,114,119,130],"with":[65,83,115,131,193],"0,":[66],"1,":[67],"2,":[68],"...":[69],"repairs,":[70],"but":[71],"also":[72],"predict":[73],"number":[75,86,166],"failures":[79],"given":[85],"repairs.":[88,117,133],"Because":[89],"defects":[90,112,182],"in":[91,190],"circuits":[93],"tend":[94],"cluster,":[96],"it":[97],"has":[98],"been":[99],"suspected":[100],"repaired":[102],"have":[104],"greater":[106],"chance":[107],"containing":[109],"early-life":[110],"reliability":[111],"than":[113,129],"no":[116,132],"Repaired":[118],"should":[120],"therefore":[121],"be":[122],"more":[123],"likely":[124],"fail":[126],"tests":[128],"work":[135],"presents":[136],"first":[138],"experimental":[139,146],"validation":[140],"these":[142],"statements.":[143],"particular,":[145],"results":[147],"indicate":[148],"that,":[149],"as":[150],"predicted":[151],"by":[152],"model,":[155],"failure":[159],"probability":[160],"linearly":[162],"related":[163,176],"repairs;":[168],"slope":[170],"this":[172],"line":[173],"intimately":[175],"degree":[179],"which":[181],"cluster":[183],"over":[184],"wafer.":[186],"Model":[187],"predictions":[188],"are":[189],"excellent":[191],"agreement":[192],"observed":[194],"data.":[195]},"counts_by_year":[{"year":2012,"cited_by_count":1}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}