{"id":"https://openalex.org/W4388915689","doi":"https://doi.org/10.1109/tencon58879.2023.10322475","title":"Behavior of Crystal Defects at Low Temperature in AlGaN/GaN HEMTs","display_name":"Behavior of Crystal Defects at Low Temperature in AlGaN/GaN HEMTs","publication_year":2023,"publication_date":"2023-10-31","ids":{"openalex":"https://openalex.org/W4388915689","doi":"https://doi.org/10.1109/tencon58879.2023.10322475"},"language":"en","primary_location":{"id":"doi:10.1109/tencon58879.2023.10322475","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/tencon58879.2023.10322475","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"TENCON 2023 - 2023 IEEE Region 10 Conference (TENCON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5067027423","display_name":"Haruki Hayashi","orcid":null},"institutions":[{"id":"https://openalex.org/I98940699","display_name":"Chukyo University","ror":"https://ror.org/04ajrmg05","country_code":"JP","type":"education","lineage":["https://openalex.org/I98940699"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Haruki Hayashi","raw_affiliation_strings":["School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN","Department of Electrical and Electronic Engineering, School of Engineering, Chukyo University, Nagoya, JAPAN"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN","institution_ids":["https://openalex.org/I98940699"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, School of Engineering, Chukyo University, Nagoya, JAPAN","institution_ids":["https://openalex.org/I98940699"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019910404","display_name":"Yuki Shimizu","orcid":"https://orcid.org/0000-0003-3527-2869"},"institutions":[{"id":"https://openalex.org/I98940699","display_name":"Chukyo University","ror":"https://ror.org/04ajrmg05","country_code":"JP","type":"education","lineage":["https://openalex.org/I98940699"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yuki Shimizu","raw_affiliation_strings":["School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN","Department of Electrical and Electronic Engineering, School of Engineering, Chukyo University, Nagoya, JAPAN"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN","institution_ids":["https://openalex.org/I98940699"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, School of Engineering, Chukyo University, Nagoya, JAPAN","institution_ids":["https://openalex.org/I98940699"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109657777","display_name":"Atsuya Fujiwara","orcid":null},"institutions":[{"id":"https://openalex.org/I98940699","display_name":"Chukyo University","ror":"https://ror.org/04ajrmg05","country_code":"JP","type":"education","lineage":["https://openalex.org/I98940699"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Atsuya Fujiwara","raw_affiliation_strings":["School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN","Department of Electrical and Electronic Engineering, School of Engineering, Chukyo University, Nagoya, JAPAN"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN","institution_ids":["https://openalex.org/I98940699"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, School of Engineering, Chukyo University, Nagoya, JAPAN","institution_ids":["https://openalex.org/I98940699"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5093318849","display_name":"Kondo Kento","orcid":null},"institutions":[{"id":"https://openalex.org/I98940699","display_name":"Chukyo University","ror":"https://ror.org/04ajrmg05","country_code":"JP","type":"education","lineage":["https://openalex.org/I98940699"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kondo Kento","raw_affiliation_strings":["School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN","Department of Electrical and Electronic Engineering, School of Engineering, Chukyo University, Nagoya, JAPAN"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN","institution_ids":["https://openalex.org/I98940699"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, School of Engineering, Chukyo University, Nagoya, JAPAN","institution_ids":["https://openalex.org/I98940699"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103899404","display_name":"Hirohisa Taguchi","orcid":null},"institutions":[{"id":"https://openalex.org/I98940699","display_name":"Chukyo University","ror":"https://ror.org/04ajrmg05","country_code":"JP","type":"education","lineage":["https://openalex.org/I98940699"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hirohisa Taguchi","raw_affiliation_strings":["School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN","Department of Electrical and Electronic Engineering, School of Engineering, Chukyo University, Nagoya, JAPAN"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN","institution_ids":["https://openalex.org/I98940699"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, School of Engineering, Chukyo University, Nagoya, JAPAN","institution_ids":["https://openalex.org/I98940699"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.09801173,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"579","last_page":"582"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7918300628662109},{"id":"https://openalex.org/keywords/crystal","display_name":"Crystal (programming language)","score":0.7083792686462402},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5398264527320862},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5163282752037048},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.33015644550323486},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.13884279131889343},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.11709854006767273}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7918300628662109},{"id":"https://openalex.org/C2781285689","wikidata":"https://www.wikidata.org/wiki/Q21921428","display_name":"Crystal (programming language)","level":2,"score":0.7083792686462402},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5398264527320862},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5163282752037048},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.33015644550323486},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.13884279131889343},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.11709854006767273},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tencon58879.2023.10322475","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/tencon58879.2023.10322475","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"TENCON 2023 - 2023 IEEE Region 10 Conference (TENCON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.7900000214576721}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W2898424858","https://openalex.org/W2905153293","https://openalex.org/W2911892655","https://openalex.org/W2943643689","https://openalex.org/W2945102769","https://openalex.org/W2954816115","https://openalex.org/W2972215046","https://openalex.org/W2999330210","https://openalex.org/W3207910183","https://openalex.org/W4280522388","https://openalex.org/W4286209311","https://openalex.org/W4307955164","https://openalex.org/W4321373279"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2016187641","https://openalex.org/W2805339068","https://openalex.org/W4246450666","https://openalex.org/W4388998267","https://openalex.org/W2898370298","https://openalex.org/W2137437058","https://openalex.org/W4390401159","https://openalex.org/W2744391499","https://openalex.org/W2800070131"],"abstract_inverted_index":{"In":[0,91,143],"this":[1],"study,":[2],"the":[3,18,25,35,39,42,48,52,60,67,73,77,86,101,115,120,133,155,166,180,184],"current-voltage":[4],"(IV)":[5],"and":[6,17,51,104,154,174,183],"Radio":[7],"Frequency":[8],"(RF)":[9],"characteristics":[10],"were":[11],"measured":[12],"in":[13,72,85,138,149,165],"a":[14,144,161],"low-temperature":[15,89],"environment,":[16],"transient":[19],"response":[20],"waveform":[21],"was":[22,64,94,172],"analyzed":[23],"by":[24,96],"simplified":[26],"Isothermal":[27],"Capacitance":[28],"Transient":[29],"Spectroscopy":[30],"(ICTS)":[31],"method.":[32],"According":[33],"to":[34,119,190],"measurement":[36],"results":[37,78],"of":[38,135,169],"IV":[40],"characteristics,":[41,62],"current":[43],"value":[44],"decreased":[45],"rapidly":[46],"as":[47],"temperature":[49,71],"decreased,":[50],"linear":[53],"region":[54],"could":[55],"not":[56],"be":[57],"confirmed.":[58],"From":[59],"RF":[61],"it":[63,93,175],"confirmed":[65,95],"that":[66,80,100,132,178],"gain":[68],"varies":[69],"with":[70,109],"high-frequency":[74,145],"band.":[75],"Furthermore,":[76],"suggested":[79],"substantial":[81],"structural":[82],"changes":[83],"occurred":[84],"device":[87],"under":[88],"environments.":[90],"addition,":[92],"simple":[97],"ICTS":[98],"analysis":[99],"capture":[102,181],"cross-section":[103,182],"crystal":[105,121,127,139,150,156,170,185],"defect":[106,186],"concentration":[107,187],"increased":[108,188],"decreasing":[110],"temperature.":[111,194],"At":[112],"room":[113,193],"temperature,":[114],"thermal":[116],"energy":[117],"imparted":[118],"layer":[122],"induces":[123],"phonon":[124],"scattering":[125],"at":[126,192],"lattice":[128],"points.":[129],"This":[130],"implies":[131],"process":[134],"trapping":[136],"electrons":[137],"defects":[140,151,157,171],"is":[141,176],"suppressed.":[142],"region,":[146],"carriers":[147],"trapped":[148],"are":[152],"released":[153],"become":[158],"conspicuous.":[159],"As":[160],"result,":[162],"an":[163],"increase":[164],"capacitance":[167],"component":[168],"confirmed,":[173],"thought":[177],"both":[179],"compared":[189],"those":[191]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}
