{"id":"https://openalex.org/W2995246433","doi":"https://doi.org/10.1109/tencon.2019.8929706","title":"The Impact of Interface Traps (acceptor/donor) on Fe DS-SBTFET Characteristics","display_name":"The Impact of Interface Traps (acceptor/donor) on Fe DS-SBTFET Characteristics","publication_year":2019,"publication_date":"2019-10-01","ids":{"openalex":"https://openalex.org/W2995246433","doi":"https://doi.org/10.1109/tencon.2019.8929706","mag":"2995246433"},"language":"en","primary_location":{"id":"doi:10.1109/tencon.2019.8929706","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tencon.2019.8929706","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5001249544","display_name":"Puja Ghosh","orcid":"https://orcid.org/0000-0003-0113-6383"},"institutions":[{"id":"https://openalex.org/I151903974","display_name":"National Institute Of Technology Silchar","ror":"https://ror.org/001ws2a36","country_code":"IN","type":"education","lineage":["https://openalex.org/I151903974"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Puja Ghosh","raw_affiliation_strings":["Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, India","institution_ids":["https://openalex.org/I151903974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5021356966","display_name":"Brinda Bhowmick","orcid":"https://orcid.org/0000-0002-3622-3455"},"institutions":[{"id":"https://openalex.org/I151903974","display_name":"National Institute Of Technology Silchar","ror":"https://ror.org/001ws2a36","country_code":"IN","type":"education","lineage":["https://openalex.org/I151903974"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Brinda Bhowmick","raw_affiliation_strings":["Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, India","institution_ids":["https://openalex.org/I151903974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5001249544"],"corresponding_institution_ids":["https://openalex.org/I151903974"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.14040344,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":"8","issue":null,"first_page":"73","last_page":"77"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/interface","display_name":"Interface (matter)","score":0.698887288570404},{"id":"https://openalex.org/keywords/acceptor","display_name":"Acceptor","score":0.6389197707176208},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.44547465443611145},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3673055171966553},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.33825942873954773},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15922033786773682},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.14642184972763062},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.12344774603843689}],"concepts":[{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.698887288570404},{"id":"https://openalex.org/C2779892579","wikidata":"https://www.wikidata.org/wiki/Q912138","display_name":"Acceptor","level":2,"score":0.6389197707176208},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.44547465443611145},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3673055171966553},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.33825942873954773},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15922033786773682},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.14642184972763062},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.12344774603843689},{"id":"https://openalex.org/C129307140","wikidata":"https://www.wikidata.org/wiki/Q6795880","display_name":"Maximum bubble pressure method","level":3,"score":0.0},{"id":"https://openalex.org/C157915830","wikidata":"https://www.wikidata.org/wiki/Q2928001","display_name":"Bubble","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tencon.2019.8929706","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tencon.2019.8929706","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.75,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1987057642","https://openalex.org/W1993536838","https://openalex.org/W1997712533","https://openalex.org/W2009926882","https://openalex.org/W2013468429","https://openalex.org/W2016106189","https://openalex.org/W2023637104","https://openalex.org/W2027855227","https://openalex.org/W2032197740","https://openalex.org/W2053342984","https://openalex.org/W2129599852","https://openalex.org/W2129680670","https://openalex.org/W2157679815","https://openalex.org/W2158143136","https://openalex.org/W2160732864","https://openalex.org/W2167766464","https://openalex.org/W2502562286","https://openalex.org/W2613275229","https://openalex.org/W2811437705","https://openalex.org/W2901088171"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W4246450666","https://openalex.org/W4388998267","https://openalex.org/W2898370298","https://openalex.org/W2137437058","https://openalex.org/W4390401159","https://openalex.org/W2744391499","https://openalex.org/W3120461830","https://openalex.org/W4230250635","https://openalex.org/W3041790586"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"the":[3,92,100,128,132],"reliability":[4],"issues":[5],"of":[6,23,35,72,77,112,121,134],"Ferroelectric":[7,44],"Dopant":[8],"Segregated":[9],"Schottky":[10],"Barrier":[11],"TFET":[12],"(Fe":[13],"DS-SBTFET).":[14],"The":[15,33],"device":[16,130],"has":[17,40],"been":[18,41,65,125],"optimized":[19],"for":[20],"various":[21],"thickness":[22],"ferroelectric":[24],"layer":[25],"in":[26,43,131],"order":[27],"to":[28],"achieve":[29],"steep":[30],"subthreshold":[31],"slope.":[32],"impact":[34],"uniform":[36],"and":[37,54,79,119],"gaussian":[38],"traps":[39],"examined":[42],"DS-SBTFET.":[45],"Various":[46],"electrical":[47],"parameters":[48],"such":[49],"as":[50],"Subthreshold":[51],"Swing":[52],"(SS)":[53],"I":[55,103],"<sub":[56,60,84,104,108],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[57,61,85,105,109,117],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">ON</sub>":[58,106],"/I":[59,107],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">OFF</sub>":[62,110],"ratio":[63,111],"have":[64,124],"quantified":[66],"against":[67],"donor":[68,96],"or":[69],"acceptor":[70],"types":[71],"interface":[73],"traps,":[74,78],"density":[75],"(Dit)":[76],"trap":[80,90,98],"energy":[81],"level":[82],"(E":[83],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">trap</sub>":[86],").":[87],"Acceptor":[88],"type":[89,97],"deteriorates":[91],"ON":[93,101],"current":[94],"whereas":[95],"enhances":[99],"current.":[102],"5.35":[113],"\u00d7":[114],"10":[115],"<sup":[116],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">8</sup>":[118],"SS":[120],"17":[122],"mV/decade":[123],"achieved":[126],"by":[127],"proposed":[129],"absence":[133],"traps.":[135]},"counts_by_year":[{"year":2024,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}