{"id":"https://openalex.org/W2918490966","doi":"https://doi.org/10.1109/tencon.2018.8650267","title":"Temperature Reliability of Junctionless Twin Gate Recessed Channel (JL-TGRC) MOSFET with Different Gate Material for Low Power Digital-Logic Applications","display_name":"Temperature Reliability of Junctionless Twin Gate Recessed Channel (JL-TGRC) MOSFET with Different Gate Material for Low Power Digital-Logic Applications","publication_year":2018,"publication_date":"2018-10-01","ids":{"openalex":"https://openalex.org/W2918490966","doi":"https://doi.org/10.1109/tencon.2018.8650267","mag":"2918490966"},"language":"en","primary_location":{"id":"doi:10.1109/tencon.2018.8650267","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tencon.2018.8650267","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"TENCON 2018 - 2018 IEEE Region 10 Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5090635177","display_name":"Ajay Kumar","orcid":"https://orcid.org/0000-0001-8043-8253"},"institutions":[{"id":"https://openalex.org/I863896202","display_name":"Delhi Technological University","ror":"https://ror.org/01ztcvt22","country_code":"IN","type":"education","lineage":["https://openalex.org/I863896202"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Ajay Kumar","raw_affiliation_strings":["Electrical Engineering Department, Delhi Technological University, Delhi, India"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, Delhi Technological University, Delhi, India","institution_ids":["https://openalex.org/I863896202"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103002071","display_name":"Samarth Singh","orcid":"https://orcid.org/0000-0002-7936-1778"},"institutions":[{"id":"https://openalex.org/I863896202","display_name":"Delhi Technological University","ror":"https://ror.org/01ztcvt22","country_code":"IN","type":"education","lineage":["https://openalex.org/I863896202"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Samarth Singh","raw_affiliation_strings":["Applied Physics Department, Delhi Technological University, Delhi, India"],"affiliations":[{"raw_affiliation_string":"Applied Physics Department, Delhi Technological University, Delhi, India","institution_ids":["https://openalex.org/I863896202"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064704666","display_name":"Balark Tiwari","orcid":"https://orcid.org/0000-0002-3259-9025"},"institutions":[{"id":"https://openalex.org/I863896202","display_name":"Delhi Technological University","ror":"https://ror.org/01ztcvt22","country_code":"IN","type":"education","lineage":["https://openalex.org/I863896202"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Balark Tiwari","raw_affiliation_strings":["Applied Physics Department, Delhi Technological University, Delhi, India"],"affiliations":[{"raw_affiliation_string":"Applied Physics Department, Delhi Technological University, Delhi, India","institution_ids":["https://openalex.org/I863896202"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038751035","display_name":"Rishu Chaujar","orcid":"https://orcid.org/0000-0002-0161-8449"},"institutions":[{"id":"https://openalex.org/I863896202","display_name":"Delhi Technological University","ror":"https://ror.org/01ztcvt22","country_code":"IN","type":"education","lineage":["https://openalex.org/I863896202"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Rishu Chaujar","raw_affiliation_strings":["Applied Physics Department, Delhi Technological University, Delhi, India"],"affiliations":[{"raw_affiliation_string":"Applied Physics Department, Delhi Technological University, Delhi, India","institution_ids":["https://openalex.org/I863896202"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5090635177"],"corresponding_institution_ids":["https://openalex.org/I863896202"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.17497034,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"23","issue":null,"first_page":"1070","last_page":"1074"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.45279040932655334},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3546004891395569},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35123109817504883},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3386824429035187},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3358907699584961},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.331464946269989},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.308845579624176},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13546130061149597},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.09763896465301514}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.45279040932655334},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3546004891395569},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35123109817504883},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3386824429035187},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3358907699584961},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.331464946269989},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.308845579624176},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13546130061149597},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.09763896465301514}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tencon.2018.8650267","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tencon.2018.8650267","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"TENCON 2018 - 2018 IEEE Region 10 Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6700000166893005,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1031976204","https://openalex.org/W1846040450","https://openalex.org/W1985399727","https://openalex.org/W2020472674","https://openalex.org/W2046412353","https://openalex.org/W2106314093","https://openalex.org/W2112813001","https://openalex.org/W2114948497","https://openalex.org/W2144993900","https://openalex.org/W2148017340","https://openalex.org/W2283775418","https://openalex.org/W2292180369","https://openalex.org/W2532123035","https://openalex.org/W2593978917","https://openalex.org/W2617899953","https://openalex.org/W2792080094"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2748952813","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"the":[3,61,85,122,135],"temperature":[4,16],"reliability":[5],"of":[6,63,128],"junctionless":[7],"twin":[8],"gate":[9,33,98,132,142],"recessed":[10],"channel":[11],"(JL-TGRC)":[12],"MOSFET":[13,153],"at":[14,119],"high":[15],"for":[17,23,57,87,159],"different":[18],"materials":[19,34,86],"have":[20,68,80,145],"been":[21,69,81,146],"realized":[22],"low":[24,64,160],"power":[25,161],"digital-logic":[26],"applications.":[27,164],"Along":[28],"with":[29,105,154],"thermal":[30,89,138],"analysis,":[31,139],"several":[32],"(Au-ITO,":[35],"Au-Mo,":[36],"HfO":[37],"<sub":[38,42,48,52,77,107,114],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[39,43,49,53,78,108,115],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[40,44,50,54,79],"-ZrO":[41,51],",":[45],"SiC-SiC,":[46],"ZrO":[47,76],"and":[55,75,91,112,141],"ITO-ITO)":[56],"their":[58],"applicability":[59,144],"in":[60],"domain":[62],"voltage/power":[65],"digital":[66,130,162],"electronics":[67,163],"discussed.":[70],"ITO":[71],"(Indium":[72],"Tin":[73],"Oxide)":[74],"chosen":[82],"among":[83],"all":[84],"further":[88],"analysis":[90],"is":[92,157],"considered":[93],"to":[94],"be":[95],"a":[96,125],"promising":[97],"material":[99,143],"having":[100],"fast":[101],"responsive":[102],"transfer":[103],"characteristics":[104,156],"V":[106,113],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">th</sub>":[109],"=":[110],"0.2V":[111],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">sat</sub>":[116],">":[117],"1V":[118],"500K.":[120],"Further,":[121],"device":[123],"gives":[124],"full":[126],"functionality":[127],"2-input":[129],"`AND'":[131],"logic.":[133],"All":[134],"simulations":[136],"regarding":[137],"structure,":[140],"performed":[147],"using":[148],"Silvaco":[149],"TCAD.":[150],"Thus":[151],"JL-TGRC":[152],"swift":[155],"reliable":[158]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}