{"id":"https://openalex.org/W4389609846","doi":"https://doi.org/10.1109/tcsii.2023.3342072","title":"Arbitrary Shaped High-Voltage RF Switch","display_name":"Arbitrary Shaped High-Voltage RF Switch","publication_year":2023,"publication_date":"2023-12-12","ids":{"openalex":"https://openalex.org/W4389609846","doi":"https://doi.org/10.1109/tcsii.2023.3342072"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2023.3342072","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2023.3342072","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108706710","display_name":"Oguzhan Oezdamar","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Oguzhan Oezdamar","raw_affiliation_strings":["RF and Sensors Department, Infineon Technologies AG, Neubiberg, Germany"],"affiliations":[{"raw_affiliation_string":"RF and Sensors Department, Infineon Technologies AG, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091122058","display_name":"Semen Syroiezhin","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Semen Syroiezhin","raw_affiliation_strings":["RF and Sensors Department, Infineon Technologies AG, Neubiberg, Germany"],"affiliations":[{"raw_affiliation_string":"RF and Sensors Department, Infineon Technologies AG, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101427151","display_name":"A. Cattaneo","orcid":"https://orcid.org/0009-0003-9321-5421"},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Andrea Cattaneo","raw_affiliation_strings":["RF and Sensors Department, Infineon Technologies AG, Neubiberg, Germany"],"affiliations":[{"raw_affiliation_string":"RF and Sensors Department, Infineon Technologies AG, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5079411008","display_name":"Valentyn Solomko","orcid":"https://orcid.org/0000-0002-7689-8529"},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Valentyn Solomko","raw_affiliation_strings":["RF and Sensors Department, Infineon Technologies AG, Neubiberg, Germany"],"affiliations":[{"raw_affiliation_string":"RF and Sensors Department, Infineon Technologies AG, Neubiberg, Germany","institution_ids":["https://openalex.org/I137594350"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5108706710"],"corresponding_institution_ids":["https://openalex.org/I137594350"],"apc_list":null,"apc_paid":null,"fwci":0.1339,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.47091785,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":"71","issue":"3","first_page":"1571","last_page":"1575"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6068318486213684},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5943553447723389},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5795472860336304},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5791224241256714},{"id":"https://openalex.org/keywords/crossover-switch","display_name":"Crossover switch","score":0.5697137713432312},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.49081453680992126},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4883212745189667},{"id":"https://openalex.org/keywords/microstrip","display_name":"Microstrip","score":0.48457396030426025},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3628970980644226},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3583129346370697},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3400874137878418},{"id":"https://openalex.org/keywords/limit-switch","display_name":"Limit switch","score":0.2752596437931061},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.13962295651435852},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.12222129106521606}],"concepts":[{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6068318486213684},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5943553447723389},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5795472860336304},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5791224241256714},{"id":"https://openalex.org/C12334850","wikidata":"https://www.wikidata.org/wiki/Q1535092","display_name":"Crossover switch","level":3,"score":0.5697137713432312},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.49081453680992126},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4883212745189667},{"id":"https://openalex.org/C123657345","wikidata":"https://www.wikidata.org/wiki/Q639055","display_name":"Microstrip","level":2,"score":0.48457396030426025},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3628970980644226},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3583129346370697},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3400874137878418},{"id":"https://openalex.org/C202992132","wikidata":"https://www.wikidata.org/wiki/Q1340519","display_name":"Limit switch","level":2,"score":0.2752596437931061},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.13962295651435852},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12222129106521606},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2023.3342072","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2023.3342072","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.5299999713897705,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W2001681296","https://openalex.org/W2020060529","https://openalex.org/W2054692642","https://openalex.org/W2136322001","https://openalex.org/W2140916121","https://openalex.org/W2168301369","https://openalex.org/W2289772222","https://openalex.org/W2790417970","https://openalex.org/W2901443876","https://openalex.org/W2998881534","https://openalex.org/W2999859258","https://openalex.org/W3035721966","https://openalex.org/W3126737514","https://openalex.org/W3129260641","https://openalex.org/W3159967110","https://openalex.org/W4200092733","https://openalex.org/W4200486487","https://openalex.org/W4233793410","https://openalex.org/W4238467972","https://openalex.org/W6634231683","https://openalex.org/W6635495341","https://openalex.org/W6790400246"],"related_works":["https://openalex.org/W3014521742","https://openalex.org/W2347585086","https://openalex.org/W2617868873","https://openalex.org/W3204141294","https://openalex.org/W1527953837","https://openalex.org/W2042100038","https://openalex.org/W4306968100","https://openalex.org/W2764319374","https://openalex.org/W2075460687","https://openalex.org/W3032934611"],"abstract_inverted_index":{"This":[0],"brief":[1],"deals":[2],"with":[3],"the":[4,20,31,50,56,62,98,102],"improvement":[5,92],"of":[6,9,30,40],"voltage":[7,94,110],"handling":[8,95,111],"stacked":[10],"MOSFET-based":[11],"RF":[12],"switches":[13],"on":[14,66,78],"high-ohmic":[15],"silicon":[16],"substrates":[17],"by":[18,97],"optimizing":[19],"substrate":[21,46],"capacitance":[22,47],"for":[23,61,108],"each":[24],"transistor":[25],"in":[26,49,76,84,93],"stack.":[27],"The":[28,45,71,90],"layout":[29],"proposed":[32,72],"switch":[33,52,81,88,100],"arrangement":[34],"has":[35],"a":[36,41,67,85],"trapezoidal":[37,51,99],"shape":[38],"instead":[39],"conventional":[42],"rectangular":[43,104],"layout.":[44],"distribution":[48],"is":[53,74,106],"predicted":[54],"using":[55],"inverted":[57],"microstrip":[58],"line":[59],"model":[60],"flip-chip":[63],"IC":[64],"mounted":[65],"printed":[68],"circuit":[69],"board.":[70],"idea":[73],"verified":[75],"hardware":[77],"two":[79],"prototype":[80],"ICs":[82],"fabricated":[83],"dedicated":[86],"CMOS":[87],"technology.":[89],"measured":[91],"brought":[96],"over":[101],"convention":[103],"configuration":[105],"1.4V":[107],"60V":[109],"class":[112],"device.":[113]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}