{"id":"https://openalex.org/W4387490270","doi":"https://doi.org/10.1109/tcsii.2023.3323221","title":"A Concurrent 26/48 GHz Low-Noise Amplifier With an Optimal Dual-Band Noise Matching Method Using GaAs 0.15 \u03bcm pHEMT","display_name":"A Concurrent 26/48 GHz Low-Noise Amplifier With an Optimal Dual-Band Noise Matching Method Using GaAs 0.15 \u03bcm pHEMT","publication_year":2023,"publication_date":"2023-10-10","ids":{"openalex":"https://openalex.org/W4387490270","doi":"https://doi.org/10.1109/tcsii.2023.3323221"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2023.3323221","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2023.3323221","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072928183","display_name":"Sunwoo Lee","orcid":"https://orcid.org/0000-0001-7645-8702"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sunwoo Lee","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Hanyang University, Ansan, South Korea"],"raw_orcid":"https://orcid.org/0000-0001-7645-8702","affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Hanyang University, Ansan, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060861310","display_name":"Wonwoo Seo","orcid":"https://orcid.org/0000-0003-4727-9881"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Wonwoo Seo","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Hanyang University, Ansan, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-4727-9881","affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Hanyang University, Ansan, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074661321","display_name":"Sung-Hyuk Kim","orcid":"https://orcid.org/0000-0002-7071-8128"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sunghyuk Kim","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Hanyang University, Ansan, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-7071-8128","affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Hanyang University, Ansan, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061774958","display_name":"Byunghun Ko","orcid":"https://orcid.org/0000-0002-8236-6596"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byunghun Ko","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Hanyang University, Ansan, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-8236-6596","affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Hanyang University, Ansan, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021506408","display_name":"Songjune Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Songjune Lee","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Hanyang University, Ansan, South Korea"],"raw_orcid":"https://orcid.org/0009-0005-1432-1686","affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Hanyang University, Ansan, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101677832","display_name":"Min-Su Kim","orcid":"https://orcid.org/0000-0002-7566-5408"},"institutions":[{"id":"https://openalex.org/I11893660","display_name":"Mokpo National University","ror":"https://ror.org/00v81k483","country_code":"KR","type":"education","lineage":["https://openalex.org/I11893660"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Min-Su Kim","raw_affiliation_strings":["Department of Information and Electronic Engineering, Mokpo National University, Mokpo, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-7566-5408","affiliations":[{"raw_affiliation_string":"Department of Information and Electronic Engineering, Mokpo National University, Mokpo, South Korea","institution_ids":["https://openalex.org/I11893660"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100349755","display_name":"Junghyun Kim","orcid":"https://orcid.org/0000-0001-9424-3377"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Junghyun Kim","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Hanyang University, Ansan, South Korea"],"raw_orcid":"https://orcid.org/0000-0001-9424-3377","affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Hanyang University, Ansan, South Korea","institution_ids":["https://openalex.org/I4575257"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":0.754,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.67169364,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":99},"biblio":{"volume":"71","issue":"3","first_page":"1096","last_page":"1100"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7919642925262451},{"id":"https://openalex.org/keywords/low-noise-amplifier","display_name":"Low-noise amplifier","score":0.593231201171875},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.562868595123291},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5091869235038757},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.47476673126220703},{"id":"https://openalex.org/keywords/multi-band-device","display_name":"Multi-band device","score":0.448181688785553},{"id":"https://openalex.org/keywords/dual","display_name":"Dual (grammatical number)","score":0.4259568452835083},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.41605594754219055},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.41582727432250977},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3789868950843811},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35214370489120483},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.33528774976730347},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3161300718784332},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22679567337036133},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22124895453453064},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.060611605644226074}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7919642925262451},{"id":"https://openalex.org/C155332784","wikidata":"https://www.wikidata.org/wiki/Q1151304","display_name":"Low-noise amplifier","level":4,"score":0.593231201171875},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.562868595123291},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5091869235038757},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.47476673126220703},{"id":"https://openalex.org/C134546842","wikidata":"https://www.wikidata.org/wiki/Q1756885","display_name":"Multi-band device","level":3,"score":0.448181688785553},{"id":"https://openalex.org/C2780980858","wikidata":"https://www.wikidata.org/wiki/Q110022","display_name":"Dual (grammatical number)","level":2,"score":0.4259568452835083},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.41605594754219055},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.41582727432250977},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3789868950843811},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35214370489120483},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.33528774976730347},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3161300718784332},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22679567337036133},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22124895453453064},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.060611605644226074},{"id":"https://openalex.org/C124952713","wikidata":"https://www.wikidata.org/wiki/Q8242","display_name":"Literature","level":1,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.0},{"id":"https://openalex.org/C21822782","wikidata":"https://www.wikidata.org/wiki/Q131214","display_name":"Antenna (radio)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2023.3323221","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2023.3323221","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8399999737739563,"id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G3366808515","display_name":null,"funder_award_id":"20019457","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"},{"id":"https://openalex.org/G7902052567","display_name":null,"funder_award_id":"2021R1F1A1063002","funder_id":"https://openalex.org/F4320322030","funder_display_name":"Ministry of Science, ICT and Future Planning"}],"funders":[{"id":"https://openalex.org/F4320321681","display_name":"Ministry of Trade, Industry and Energy","ror":"https://ror.org/008nkqk13"},{"id":"https://openalex.org/F4320322030","display_name":"Ministry of Science, ICT and Future Planning","ror":"https://ror.org/032e49973"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1483625982","https://openalex.org/W2006596830","https://openalex.org/W2073002603","https://openalex.org/W2130899131","https://openalex.org/W2135645415","https://openalex.org/W2524201682","https://openalex.org/W2921200742","https://openalex.org/W2973387867","https://openalex.org/W2989673700","https://openalex.org/W3033061782","https://openalex.org/W3081687417","https://openalex.org/W3081916494","https://openalex.org/W3108388175","https://openalex.org/W3131632681","https://openalex.org/W3154671047","https://openalex.org/W3188203344","https://openalex.org/W4210322793","https://openalex.org/W4288391501","https://openalex.org/W4301072700"],"related_works":["https://openalex.org/W4390606084","https://openalex.org/W2038467097","https://openalex.org/W2382937231","https://openalex.org/W3000916362","https://openalex.org/W2109065964","https://openalex.org/W2515952003","https://openalex.org/W2010358330","https://openalex.org/W2064881384","https://openalex.org/W4390187685","https://openalex.org/W2024400826"],"abstract_inverted_index":{"This":[0],"brief":[1],"presents":[2],"the":[3,88,106],"design":[4],"and":[5,24,46,64,81,87,98,119],"fabrication":[6],"of":[7,75],"a":[8,17,72,134],"concurrent":[9],"26/48":[10],"GHz":[11,80,97,118],"low-noise":[12],"amplifier":[13],"(LNA)":[14],"that":[15],"includes":[16],"dual-band":[18,30,35],"matching":[19,31,37],"network":[20,32],"for":[21,38],"moderate":[22],"gain":[23,63,74],"optimized":[25],"noise":[26,39,65],"performance.":[27],"The":[28,68,125],"proposed":[29],"achieve":[33,61],"simultaneous":[34],"impedance":[36],"figure":[40],"(NF)":[41],"optimization":[42],"by":[43],"utilizing":[44],"series":[45],"parallel":[47],"resonance":[48],"methods.":[49],"A":[50],"cascode":[51],"structure":[52],"with":[53,129],"inductive":[54],"source":[55],"degeneration":[56],"is":[57,113],"employed":[58],"to":[59],"simultaneously":[60],"both":[62],"performance":[66],"optimization.":[67],"fabricated":[69,128],"LNA":[70,126],"has":[71],"small-signal":[73],"12.5":[76],"dB":[77,83,94,100,109],"at":[78,84,92,95,101,116,122],"26":[79,96,117],"14.5":[82],"48":[85,102,123],"GHz,":[86,103],"NF":[89],"was":[90,127],"measured":[91],"2.61":[93],"3.41":[99],"respectively.":[104],"Moreover,":[105],"output":[107],"1":[108],"compression":[110],"point":[111],"(OP1dB)":[112],"2.3":[114],"dBm":[115,121],"\u22122.7":[120],"GHz.":[124],"an":[130],"area":[131],"of$1.34\\times":[132],"0.7\\,\\,{mm}^{2}$using":[133],"GaAs$0.15~{\\mu":[135],"m}$pHEMT":[136],"process.":[137]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":4}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2025-10-10T00:00:00"}