{"id":"https://openalex.org/W4205413150","doi":"https://doi.org/10.1109/tcsii.2021.3135273","title":"Active Thermal Management for SiC MOSFETs Based on Equivalent Adjustment of Buffer Capacitor","display_name":"Active Thermal Management for SiC MOSFETs Based on Equivalent Adjustment of Buffer Capacitor","publication_year":2021,"publication_date":"2021-12-14","ids":{"openalex":"https://openalex.org/W4205413150","doi":"https://doi.org/10.1109/tcsii.2021.3135273"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2021.3135273","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2021.3135273","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103067630","display_name":"Ruoyin Wang","orcid":"https://orcid.org/0000-0003-4292-6808"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ruoyin Wang","raw_affiliation_strings":["School of Electrical Engineering, Southeast University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0003-4292-6808","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011963305","display_name":"Xueliang Huang","orcid":"https://orcid.org/0000-0001-9911-7871"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xueliang Huang","raw_affiliation_strings":["School of Electrical Engineering, Southeast University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0001-9911-7871","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100403781","display_name":"Jiacheng Li","orcid":"https://orcid.org/0000-0002-6996-4778"},"institutions":[{"id":"https://openalex.org/I134687103","display_name":"Nanjing Tech University","ror":"https://ror.org/03sd35x91","country_code":"CN","type":"education","lineage":["https://openalex.org/I134687103"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiacheng Li","raw_affiliation_strings":["College of Electrical Engineering and Control Science, Nanjing Tech University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0002-6996-4778","affiliations":[{"raw_affiliation_string":"College of Electrical Engineering and Control Science, Nanjing Tech University, Nanjing, China","institution_ids":["https://openalex.org/I134687103"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4068,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.62403623,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":"69","issue":"3","first_page":"1502","last_page":"1506"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9937000274658203,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6801522970199585},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.671191930770874},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"Junction temperature","score":0.659186840057373},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6195072531700134},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5986160635948181},{"id":"https://openalex.org/keywords/smoothing","display_name":"Smoothing","score":0.5788850784301758},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5787769556045532},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.5523914098739624},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.48817211389541626},{"id":"https://openalex.org/keywords/diffusion-capacitance","display_name":"Diffusion capacitance","score":0.4545331597328186},{"id":"https://openalex.org/keywords/buffer","display_name":"Buffer (optical fiber)","score":0.4423518180847168},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.43518292903900146},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3579983413219452},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.332825243473053},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2818707823753357},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.25570234656333923},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15375640988349915},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.1146700382232666},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.1042948067188263},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10239613056182861},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.08141204714775085},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.07017889618873596}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6801522970199585},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.671191930770874},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.659186840057373},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6195072531700134},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5986160635948181},{"id":"https://openalex.org/C3770464","wikidata":"https://www.wikidata.org/wiki/Q775963","display_name":"Smoothing","level":2,"score":0.5788850784301758},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5787769556045532},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.5523914098739624},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.48817211389541626},{"id":"https://openalex.org/C67337642","wikidata":"https://www.wikidata.org/wiki/Q5275437","display_name":"Diffusion capacitance","level":4,"score":0.4545331597328186},{"id":"https://openalex.org/C145018004","wikidata":"https://www.wikidata.org/wiki/Q4985944","display_name":"Buffer (optical fiber)","level":2,"score":0.4423518180847168},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.43518292903900146},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3579983413219452},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.332825243473053},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2818707823753357},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.25570234656333923},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15375640988349915},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.1146700382232666},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.1042948067188263},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10239613056182861},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.08141204714775085},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.07017889618873596},{"id":"https://openalex.org/C31972630","wikidata":"https://www.wikidata.org/wiki/Q844240","display_name":"Computer vision","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2021.3135273","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2021.3135273","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.800000011920929}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1967949033","https://openalex.org/W2004958883","https://openalex.org/W2024878069","https://openalex.org/W2040187209","https://openalex.org/W2086507824","https://openalex.org/W2171529034","https://openalex.org/W2621026171","https://openalex.org/W2766418078","https://openalex.org/W2798984229","https://openalex.org/W6693241493","https://openalex.org/W6729559499"],"related_works":["https://openalex.org/W2383807498","https://openalex.org/W1978572805","https://openalex.org/W1997992934","https://openalex.org/W2097227107","https://openalex.org/W1987225439","https://openalex.org/W4238188170","https://openalex.org/W2366025885","https://openalex.org/W3008203068","https://openalex.org/W2525941828","https://openalex.org/W2960969929"],"abstract_inverted_index":{"Junction":[0],"temperature":[1,36,65,124],"fluctuations":[2],"are":[3],"the":[4,10,22,34,48,57,63,81,86,93,109,122],"most":[5],"important":[6],"factor":[7],"in":[8,51,96],"accelerating":[9],"aging":[11],"and":[12],"failure":[13],"of":[14,24,80,88,132],"SiC":[15,25,52,94],"MOSFETs.":[16],"An":[17],"effective":[18],"way":[19],"to":[20,28,46,118],"improve":[21],"reliability":[23],"MOSFETs":[26,53],"is":[27],"suppress":[29],"or":[30],"even":[31],"smooth":[32,120],"out":[33,62,121],"junction":[35,64,123],"fluctuation.":[37,66],"This":[38],"brief":[39,74],"proposes":[40,76],"an":[41,77,103],"active":[42,111],"thermal":[43,112],"management":[44,113],"technique":[45],"adjust":[47],"turn-off":[49],"loss":[50],"based":[54,84],"on":[55,85],"adjusting":[56],"buffer":[58,82],"capacitance,":[59],"thus":[60],"smoothing":[61],"To":[67],"realize":[68],"online":[69],"continuous":[70],"capacitor":[71,83],"adjustment,":[72],"this":[73],"further":[75],"equivalent":[78],"adjustment":[79],"use":[87],"a":[89,97,128],"delay":[90],"switch.":[91],"Using":[92],"MOSFET":[95],"6":[98],"kW":[99],"high-frequency":[100],"inverter":[101],"as":[102],"example,":[104],"experimental":[105],"results":[106],"show":[107],"that":[108],"proposed":[110],"technology":[114],"can":[115],"be":[116],"used":[117],"completely":[119],"fluctuation":[125,131],"generated":[126],"by":[127],"rated":[129],"load":[130],"37.5%.":[133]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}