{"id":"https://openalex.org/W3194785351","doi":"https://doi.org/10.1109/tcsii.2021.3094268","title":"Frequency-Reconfigurable SP4T Switch With Plaid Metal Transistors and Forward Body Biasing for Enhanced <i>R</i>ON \u00d7 <i>C</i>OFF Characteristics","display_name":"Frequency-Reconfigurable SP4T Switch With Plaid Metal Transistors and Forward Body Biasing for Enhanced <i>R</i>ON \u00d7 <i>C</i>OFF Characteristics","publication_year":2021,"publication_date":"2021-07-02","ids":{"openalex":"https://openalex.org/W3194785351","doi":"https://doi.org/10.1109/tcsii.2021.3094268","mag":"3194785351"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2021.3094268","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2021.3094268","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101994619","display_name":"Wonho Lee","orcid":"https://orcid.org/0000-0001-8159-9067"},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]},{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR","US"],"is_corresponding":true,"raw_author_name":"Wonho Lee","raw_affiliation_strings":["Korea Advanced Institute of Science and Technology, Daejeon, South Korea","University of California at Santa Barbara, Santa Barbara, CA, USA"],"affiliations":[{"raw_affiliation_string":"Korea Advanced Institute of Science and Technology, Daejeon, South Korea","institution_ids":["https://openalex.org/I157485424"]},{"raw_affiliation_string":"University of California at Santa Barbara, Santa Barbara, CA, USA","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5033328336","display_name":"Songcheol Hong","orcid":"https://orcid.org/0000-0002-3675-1565"},"institutions":[{"id":"https://openalex.org/I157485424","display_name":"Korea Advanced Institute of Science and Technology","ror":"https://ror.org/05apxxy63","country_code":"KR","type":"education","lineage":["https://openalex.org/I157485424"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Songcheol Hong","raw_affiliation_strings":["Korea Advanced Institute of Science and Technology, Daejeon, South Korea"],"affiliations":[{"raw_affiliation_string":"Korea Advanced Institute of Science and Technology, Daejeon, South Korea","institution_ids":["https://openalex.org/I157485424"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5101994619"],"corresponding_institution_ids":["https://openalex.org/I154570441","https://openalex.org/I157485424"],"apc_list":null,"apc_paid":null,"fwci":0.9024,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.73817477,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"69","issue":"2","first_page":"399","last_page":"403"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7654839754104614},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5969479084014893},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.515889048576355},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.500542402267456},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.47189268469810486},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.46261340379714966},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.45165833830833435},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3925444483757019},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.34263360500335693},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.24514323472976685},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16126912832260132}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7654839754104614},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5969479084014893},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.515889048576355},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.500542402267456},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.47189268469810486},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.46261340379714966},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.45165833830833435},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3925444483757019},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.34263360500335693},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.24514323472976685},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16126912832260132},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2021.3094268","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2021.3094268","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.6399999856948853}],"awards":[{"id":"https://openalex.org/G160197570","display_name":null,"funder_award_id":"NRF-2020R1A2C2099939","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"}],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1984099474","https://openalex.org/W1984704951","https://openalex.org/W1996948099","https://openalex.org/W2125258886","https://openalex.org/W2147986483","https://openalex.org/W2151773358","https://openalex.org/W2157532793","https://openalex.org/W2168293832","https://openalex.org/W2170938428","https://openalex.org/W2350373939","https://openalex.org/W2566283359","https://openalex.org/W2791896328","https://openalex.org/W2800232267","https://openalex.org/W2885291557","https://openalex.org/W2918098227","https://openalex.org/W2940896484","https://openalex.org/W2947038249","https://openalex.org/W2965368172","https://openalex.org/W3026349828","https://openalex.org/W3033576411"],"related_works":["https://openalex.org/W2069427488","https://openalex.org/W4281694563","https://openalex.org/W2080696413","https://openalex.org/W1506140395","https://openalex.org/W4232799642","https://openalex.org/W3014521742","https://openalex.org/W2912082923","https://openalex.org/W2744827311","https://openalex.org/W2347585086","https://openalex.org/W2558598037"],"abstract_inverted_index":{"A":[0],"frequency-reconfigurable":[1],"SP4T":[2,84,130,141],"switch":[3,20,85,88,113,121,131,142,162],"is":[4,143],"presented,":[5],"in":[6,125,137,145,175,185],"which":[7],"<inline-formula":[8],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[9,158],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[10],"<tex-math":[11],"notation=\"LaTeX\">${R}_{\\text":[12],"{ON}}":[13],"\\times":[14],"{C}_{\\text":[15],"{OFF}}$":[16],"</tex-math></inline-formula>":[17],"characteristics":[18],"of":[19,45,57,76,118],"transistors":[21,27,34,47],"are":[22,41,191],"enhanced":[23],"with":[24,36],"plaid":[25,53],"metal":[26,33,55],"and":[28,63,69,79,102,179,196],"forward":[29,37],"body":[30,38],"biasing.":[31],"Plaid":[32],"(PMT)":[35],"bias":[39],"(FBB)":[40],"used":[42],"for":[43,60],"all":[44],"the":[46,50,61,66,73,81,111,116,119,126,134,176,186],"to":[48,95,172,182],"enhance":[49],"FoM.":[51],"The":[52,83,106,129,140,151,161],"patterned":[54],"accesses":[56],"a":[58,77,97,103,146],"transistor":[59,78],"source":[62],"drain":[64],"decrease":[65],"extrinsic":[67],"resistance":[68],"capacitance.":[70],"FBB":[71],"increases":[72],"overdrive":[74],"voltage":[75],"decreases":[80],"on-resistance.":[82],"includes":[86],"main":[87,120],"matrices":[89,122],"that":[90],"route":[91],"an":[92],"input":[93],"signal":[94],"four-outputs,":[96],"switched":[98],"inductor":[99],"(SI)":[100],"network,":[101],"mode-selection":[104,112],"switch.":[105],"SI":[107,135],"network":[108,136],"connected":[109],"through":[110],"resonates":[114],"out":[115],"off-capacitances":[117],"at":[123],"RF":[124,127,187],"mode.":[128,139],"operates":[132],"without":[133],"DC":[138,171,177],"implemented":[144],"28-nm":[147],"FDSOI":[148],"CMOS":[149],"process.":[150],"core":[152],"area":[153],"occupies":[154],"0.2":[155],"mm":[156],"<sup":[157],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[159],".":[160],"shows":[163],"less":[164],"than":[165,193],"2":[166],"dB":[167,195],"insertion":[168],"loss":[169],"from":[170,180],"4.4":[173,181],"GHz":[174,184],"mode":[178],"5.3":[183],"mode,":[188],"where":[189],"isolations":[190],"more":[192],"16.8":[194],"18":[197],"dB,":[198],"respectively.":[199]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}