{"id":"https://openalex.org/W3164012703","doi":"https://doi.org/10.1109/tcsii.2021.3083514","title":"A Scalable 20V Charge-Pump-Based Driver in 65nm CMOS Technology","display_name":"A Scalable 20V Charge-Pump-Based Driver in 65nm CMOS Technology","publication_year":2021,"publication_date":"2021-05-25","ids":{"openalex":"https://openalex.org/W3164012703","doi":"https://doi.org/10.1109/tcsii.2021.3083514","mag":"3164012703"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2021.3083514","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2021.3083514","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5067913474","display_name":"Mostafa Toubar","orcid":"https://orcid.org/0000-0001-9672-9020"},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":true,"raw_author_name":"Mostafa Toubar","raw_affiliation_strings":["Faculty of Engineering, Ain Shams University, Cairo, Egypt"],"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Ain Shams University, Cairo, Egypt","institution_ids":["https://openalex.org/I107720978"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101993191","display_name":"Yousr Ismail","orcid":"https://orcid.org/0000-0002-4485-2075"},"institutions":[{"id":"https://openalex.org/I4210127325","display_name":"Broadcom (United States)","ror":"https://ror.org/035gt5s03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127325"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yousr Ismail","raw_affiliation_strings":["Physical Layer Products Division, Broadcom Ltd., Irvine, CA, USA"],"affiliations":[{"raw_affiliation_string":"Physical Layer Products Division, Broadcom Ltd., Irvine, CA, USA","institution_ids":["https://openalex.org/I4210127325"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061566407","display_name":"Sameh A. Ibrahim","orcid":"https://orcid.org/0000-0001-8049-1441"},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Sameh Ibrahim","raw_affiliation_strings":["Faculty of Engineering, Ain Shams University, Cairo, Egypt"],"affiliations":[{"raw_affiliation_string":"Faculty of Engineering, Ain Shams University, Cairo, Egypt","institution_ids":["https://openalex.org/I107720978"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5088500459","display_name":"Chih-Kong Ken Yang","orcid":"https://orcid.org/0000-0002-2993-7724"},"institutions":[{"id":"https://openalex.org/I2799798094","display_name":"UCLA Health","ror":"https://ror.org/01d88se56","country_code":"US","type":"funder","lineage":["https://openalex.org/I2799798094"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chih-Kong Ken Yang","raw_affiliation_strings":["UCLA, Los Angeles, CA, USA"],"affiliations":[{"raw_affiliation_string":"UCLA, Los Angeles, CA, USA","institution_ids":["https://openalex.org/I2799798094"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5067913474"],"corresponding_institution_ids":["https://openalex.org/I107720978"],"apc_list":null,"apc_paid":null,"fwci":0.5014,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.63151768,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"69","issue":"1","first_page":"55","last_page":"59"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7334238886833191},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.6638992428779602},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.582775354385376},{"id":"https://openalex.org/keywords/modular-design","display_name":"Modular design","score":0.5180847644805908},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.5161615014076233},{"id":"https://openalex.org/keywords/charge-pump","display_name":"Charge pump","score":0.5097171664237976},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4511135220527649},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39718398451805115},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3946729302406311},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3781426250934601},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.37531712651252747},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3493872582912445},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.26890504360198975},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.07970556616783142}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7334238886833191},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.6638992428779602},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.582775354385376},{"id":"https://openalex.org/C101468663","wikidata":"https://www.wikidata.org/wiki/Q1620158","display_name":"Modular design","level":2,"score":0.5180847644805908},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.5161615014076233},{"id":"https://openalex.org/C114825011","wikidata":"https://www.wikidata.org/wiki/Q440704","display_name":"Charge pump","level":4,"score":0.5097171664237976},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4511135220527649},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39718398451805115},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3946729302406311},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3781426250934601},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.37531712651252747},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3493872582912445},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.26890504360198975},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.07970556616783142}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2021.3083514","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2021.3083514","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8600000143051147,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1983850839","https://openalex.org/W2000664745","https://openalex.org/W2006594940","https://openalex.org/W2016051260","https://openalex.org/W2017794492","https://openalex.org/W2162071877","https://openalex.org/W2171225711","https://openalex.org/W2576096922","https://openalex.org/W2810825081","https://openalex.org/W2899824005","https://openalex.org/W2976771476","https://openalex.org/W6667965733"],"related_works":["https://openalex.org/W2730314563","https://openalex.org/W2072859060","https://openalex.org/W2120538654","https://openalex.org/W1632369502","https://openalex.org/W2058541779","https://openalex.org/W1980639873","https://openalex.org/W2166652993","https://openalex.org/W2384021593","https://openalex.org/W2288945810","https://openalex.org/W2800568880"],"abstract_inverted_index":{"This":[0],"brief":[1],"presents":[2],"a":[3,15,25,48,94,99,110,119],"20V":[4,95],"square-wave":[5],"output":[6],"driver":[7,21,51,72,92],"in":[8],"standard":[9],"bulk":[10],"CMOS":[11],"technology":[12,63],"powered":[13],"from":[14,64],"2.5V":[16],"supply.":[17],"The":[18,71,91],"proposed":[19],"high-voltage":[20],"is":[22,31],"based":[23],"on":[24],"bidirectional":[26],"charge":[27],"pump":[28],"architecture":[29],"which":[30],"by":[32],"default":[33],"modular,":[34],"scalable":[35],"and":[36,47,82,117],"maintains":[37],"all":[38],"device":[39],"voltage":[40,58],"tolerances.":[41],"Thanks":[42],"to":[43,67],"deep":[44],"nwell":[45],"isolation":[46],"new":[49],"all-nMOS":[50],"stage":[52],"design,":[53],"we":[54],"could":[55],"extend":[56],"the":[57],"range":[59],"of":[60,89],"our":[61],"65nm":[62],"12":[65],"V":[66,69],"20":[68],"reliably.":[70],"uses":[73],"thick-oxide":[74],"devices":[75],"readily":[76],"available":[77],"at":[78,114],"no":[79],"extra":[80],"cost":[81],"occupies":[83],"0.13":[84],"mm":[85],"<sup":[86],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[87,101],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[88],"area.":[90],"has":[93,118],"swing":[96],"when":[97],"driving":[98],"<inline-formula":[100],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[102],"<tex-math":[103],"notation=\"LaTeX\">$100~\\mu":[104],"\\text{A}$":[105],"</tex-math></inline-formula>":[106],"load,":[107],"fully":[108],"switches":[109],"50pF":[111],"capacitive":[112],"load":[113],"25":[115],"kHz,":[116],"48":[120],"%":[121],"peak":[122],"power":[123],"efficiency.":[124]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}