{"id":"https://openalex.org/W3139233715","doi":"https://doi.org/10.1109/tcsii.2021.3066963","title":"Design of the Class-E Power Amplifier Considering the Temperature Effect of the Transistor On-Resistance for Sensor Applications","display_name":"Design of the Class-E Power Amplifier Considering the Temperature Effect of the Transistor On-Resistance for Sensor Applications","publication_year":2021,"publication_date":"2021-03-18","ids":{"openalex":"https://openalex.org/W3139233715","doi":"https://doi.org/10.1109/tcsii.2021.3066963","mag":"3139233715"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2021.3066963","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2021.3066963","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101756916","display_name":"Chang Liu","orcid":"https://orcid.org/0000-0002-5432-6095"},"institutions":[{"id":"https://openalex.org/I201448701","display_name":"University of Washington","ror":"https://ror.org/00cvxb145","country_code":"US","type":"education","lineage":["https://openalex.org/I201448701"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Chang Liu","raw_affiliation_strings":["University of Washington, Seattle, WA, USA"],"raw_orcid":"https://orcid.org/0000-0002-5432-6095","affiliations":[{"raw_affiliation_string":"University of Washington, Seattle, WA, USA","institution_ids":["https://openalex.org/I201448701"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036775341","display_name":"C.\u2010J. Richard Shi","orcid":"https://orcid.org/0000-0002-3157-3464"},"institutions":[{"id":"https://openalex.org/I201448701","display_name":"University of Washington","ror":"https://ror.org/00cvxb145","country_code":"US","type":"education","lineage":["https://openalex.org/I201448701"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C.-J. Richard Shi","raw_affiliation_strings":["University of Washington, Seattle, WA, USA"],"raw_orcid":"https://orcid.org/0000-0002-3157-3464","affiliations":[{"raw_affiliation_string":"University of Washington, Seattle, WA, USA","institution_ids":["https://openalex.org/I201448701"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5101756916"],"corresponding_institution_ids":["https://openalex.org/I201448701"],"apc_list":null,"apc_paid":null,"fwci":1.3218,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.79720422,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":"68","issue":"5","first_page":"1705","last_page":"1709"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11249","display_name":"Wireless Power Transfer Systems","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7737520337104797},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6921898722648621},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.6639981269836426},{"id":"https://openalex.org/keywords/compensation","display_name":"Compensation (psychology)","score":0.6449755430221558},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5334268808364868},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4969625771045685},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.48924875259399414},{"id":"https://openalex.org/keywords/transistor-model","display_name":"Transistor model","score":0.4698200523853302},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4207976162433624},{"id":"https://openalex.org/keywords/sensitivity","display_name":"Sensitivity (control systems)","score":0.41536474227905273},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40172725915908813},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.39255833625793457},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.3473284840583801},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.22746765613555908},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2273220717906952}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7737520337104797},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6921898722648621},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.6639981269836426},{"id":"https://openalex.org/C2780023022","wikidata":"https://www.wikidata.org/wiki/Q1338171","display_name":"Compensation (psychology)","level":2,"score":0.6449755430221558},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5334268808364868},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4969625771045685},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.48924875259399414},{"id":"https://openalex.org/C150169584","wikidata":"https://www.wikidata.org/wiki/Q7834319","display_name":"Transistor model","level":4,"score":0.4698200523853302},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4207976162433624},{"id":"https://openalex.org/C21200559","wikidata":"https://www.wikidata.org/wiki/Q7451068","display_name":"Sensitivity (control systems)","level":2,"score":0.41536474227905273},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40172725915908813},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.39255833625793457},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.3473284840583801},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.22746765613555908},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2273220717906952},{"id":"https://openalex.org/C15744967","wikidata":"https://www.wikidata.org/wiki/Q9418","display_name":"Psychology","level":0,"score":0.0},{"id":"https://openalex.org/C11171543","wikidata":"https://www.wikidata.org/wiki/Q41630","display_name":"Psychoanalysis","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2021.3066963","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2021.3066963","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8999999761581421,"display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G7481009480","display_name":null,"funder_award_id":"FA8650-18-2-7857","funder_id":"https://openalex.org/F4320332180","funder_display_name":"Defense Advanced Research Projects Agency"}],"funders":[{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W2004512974","https://openalex.org/W2080683544","https://openalex.org/W2104736263","https://openalex.org/W2118130389","https://openalex.org/W2135053298","https://openalex.org/W2885845003","https://openalex.org/W2949690556","https://openalex.org/W3083233450"],"related_works":["https://openalex.org/W1989891105","https://openalex.org/W2103773526","https://openalex.org/W2901469270","https://openalex.org/W2161299897","https://openalex.org/W3173836265","https://openalex.org/W2066671769","https://openalex.org/W4289106041","https://openalex.org/W2953198199","https://openalex.org/W2027806590","https://openalex.org/W2119901732"],"abstract_inverted_index":{"This":[0,121],"brief":[1],"presents":[2],"the":[3,9,15,19,35,43,46,70,74,99,106,128],"analysis":[4,130],"and":[5,31,39,87,105,131],"compensation":[6],"technique":[7,65],"for":[8,23,53],"class-E":[10,83],"power":[11,37,72],"amplifier":[12],"(PA)":[13],"considering":[14],"temperature":[16,56,79],"effect":[17],"of":[18,45,73],"non-zero":[20],"transistor":[21,47,50],"on-resistance":[22],"sensor":[24],"network":[25],"applications.":[26],"It":[27],"is":[28,58,66,111],"shown":[29],"theoretically":[30],"by":[32],"simulation":[33],"that":[34],"output":[36,71,103,109],"level":[38],"efficiency":[40],"decrease":[41],"with":[42,127],"increase":[44],"on-resistance.":[48],"The":[49],"biasing":[51,64],"condition":[52],"achieving":[54],"near-zero":[55],"dependence":[57],"derived.":[59],"With":[60],"this,":[61],"a":[62,77,90,124],"dynamic":[63],"proposed":[67],"to":[68,118],"stabilize":[69],"PA":[75,84,100],"over":[76],"wide":[78],"range.":[80],"A":[81],"prototype":[82],"was":[85],"designed":[86],"fabricated":[88],"in":[89],"0.18-":[91],"\u03bcm":[92],"CMOS":[93],"process.":[94],"Operating":[95],"at":[96],"477":[97],"MHz,":[98],"has":[101,123],"4":[102],"stages":[104],"measured":[107],"maximum":[108],"variation":[110],"about":[112],"\u00b10.3":[113],"dB":[114],"from":[115],"-40":[116],"\u00b0C":[117],"85":[119],"\u00b0C.":[120],"measurement":[122],"good":[125],"agreement":[126],"theoretical":[129],"simulation.":[132]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}