{"id":"https://openalex.org/W3126616019","doi":"https://doi.org/10.1109/tcsii.2021.3057678","title":"Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption","display_name":"Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption","publication_year":2021,"publication_date":"2021-02-09","ids":{"openalex":"https://openalex.org/W3126616019","doi":"https://doi.org/10.1109/tcsii.2021.3057678","mag":"3126616019"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2021.3057678","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2021.3057678","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5072637140","display_name":"Zhiting Lin","orcid":"https://orcid.org/0000-0002-3314-1606"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhiting Lin","raw_affiliation_strings":["School of Electronics and Information Engineering, Anhui University, Hefei, China"],"raw_orcid":"https://orcid.org/0000-0002-3314-1606","affiliations":[{"raw_affiliation_string":"School of Electronics and Information Engineering, Anhui University, Hefei, China","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025864654","display_name":"Luanyun Li","orcid":"https://orcid.org/0000-0001-6176-8847"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Luanyun Li","raw_affiliation_strings":["School of Electronics and Information Engineering, Anhui University, Hefei, China"],"raw_orcid":"https://orcid.org/0000-0001-6176-8847","affiliations":[{"raw_affiliation_string":"School of Electronics and Information Engineering, Anhui University, Hefei, China","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037391840","display_name":"Xiulong Wu","orcid":"https://orcid.org/0000-0002-5012-2570"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiulong Wu","raw_affiliation_strings":["School of Electronics and Information Engineering, Anhui University, Hefei, China"],"raw_orcid":"https://orcid.org/0000-0002-5012-2570","affiliations":[{"raw_affiliation_string":"School of Electronics and Information Engineering, Anhui University, Hefei, China","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075966974","display_name":"Chunyu Peng","orcid":"https://orcid.org/0000-0003-2408-5048"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chunyu Peng","raw_affiliation_strings":["School of Electronics and Information Engineering, Anhui University, Hefei, China"],"raw_orcid":"https://orcid.org/0000-0003-2408-5048","affiliations":[{"raw_affiliation_string":"School of Electronics and Information Engineering, Anhui University, Hefei, China","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017413053","display_name":"Wenjuan Lu","orcid":"https://orcid.org/0000-0001-6201-8589"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wenjuan Lu","raw_affiliation_strings":["School of Electronics and Information Engineering, Anhui University, Hefei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronics and Information Engineering, Anhui University, Hefei, China","institution_ids":["https://openalex.org/I143868143"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063284983","display_name":"Qiang Zhao","orcid":"https://orcid.org/0000-0002-0278-5804"},"institutions":[{"id":"https://openalex.org/I143868143","display_name":"Anhui University","ror":"https://ror.org/05th6yx34","country_code":"CN","type":"education","lineage":["https://openalex.org/I143868143"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qiang Zhao","raw_affiliation_strings":["School of Electronics and Information Engineering, Anhui University, Hefei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronics and Information Engineering, Anhui University, Hefei, China","institution_ids":["https://openalex.org/I143868143"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I143868143"],"apc_list":null,"apc_paid":null,"fwci":1.1802,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.7743862,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":"68","issue":"7","first_page":"2628","last_page":"2632"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8923989534378052},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.6536344289779663},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.632931113243103},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5693078637123108},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.5173599123954773},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.49857258796691895},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4860427975654602},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4324757754802704},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39359942078590393},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.36933422088623047},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3236950635910034},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3046708405017853}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8923989534378052},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.6536344289779663},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.632931113243103},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5693078637123108},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5173599123954773},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.49857258796691895},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4860427975654602},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4324757754802704},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39359942078590393},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.36933422088623047},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3236950635910034},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3046708405017853},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2021.3057678","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2021.3057678","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8999999761581421}],"awards":[{"id":"https://openalex.org/G1781476924","display_name":null,"funder_award_id":"Y040418177","funder_id":"https://openalex.org/F4320321435","funder_display_name":"Anhui University"},{"id":"https://openalex.org/G5582252795","display_name":"\u65b0\u539f\u7406\u5b58\u50a8\u5668\u4ef6\u7684\u5b58\u5185\u8ba1\u7b97\u5173\u952e\u6280\u672f\u7814\u7a76","funder_award_id":"61934005","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G6809148827","display_name":null,"funder_award_id":"2008085QF322","funder_id":"https://openalex.org/F4320334897","funder_display_name":"Natural Science Foundation of Anhui Province"},{"id":"https://openalex.org/G7486237554","display_name":null,"funder_award_id":"62074001","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320321435","display_name":"Anhui University","ror":"https://ror.org/05th6yx34"},{"id":"https://openalex.org/F4320334897","display_name":"Natural Science Foundation of Anhui Province","ror":null}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W239192115","https://openalex.org/W1509864575","https://openalex.org/W1976684984","https://openalex.org/W2018292887","https://openalex.org/W2022912470","https://openalex.org/W2047268472","https://openalex.org/W2057874658","https://openalex.org/W2110584581","https://openalex.org/W2132518136","https://openalex.org/W2132688693","https://openalex.org/W2166807335","https://openalex.org/W2537477273","https://openalex.org/W2593164811","https://openalex.org/W2606793136","https://openalex.org/W2797104545","https://openalex.org/W2799558639","https://openalex.org/W2890883454","https://openalex.org/W2993596838","https://openalex.org/W4253135135","https://openalex.org/W6679915245","https://openalex.org/W6750821262"],"related_works":["https://openalex.org/W2781976127","https://openalex.org/W2118528827","https://openalex.org/W2164440002","https://openalex.org/W3032966989","https://openalex.org/W4285609043","https://openalex.org/W2775062502","https://openalex.org/W2344380535","https://openalex.org/W2044270051","https://openalex.org/W1582224818","https://openalex.org/W1994089309"],"abstract_inverted_index":{"Tunnel":[0],"field-effect":[1],"transistors":[2],"(TFETs)":[3],"have":[4],"become":[5],"a":[6,41,70],"potential":[7,203],"candidate":[8],"for":[9,204],"replacing":[10],"traditional":[11],"MOSFETs":[12],"in":[13,16],"ultralow-power":[14],"applications,":[15],"future.":[17],"However,":[18],"the":[19,24,29,32,59,76,81,97,104,110,123,126,135,151,196],"forward":[20,60],"p-i-n":[21,61],"current":[22],"of":[23,31,73,80,91,96,122,150,166,178,188],"TFET":[25,45,84],"can":[26,57],"seriously":[27],"deteriorate":[28],"performance":[30],"static":[33,145,161,174],"random-access":[34],"memory":[35],"(SRAM)":[36],"circuit.":[37],"This":[38],"brief":[39],"proposes":[40],"half-select":[42],"disturb-free":[43],"10T":[44,54,83,106,129,136,198],"SRAM":[46,55,85,108,131,137,199],"cell":[47,56,86,138,200],"with":[48],"cascode":[49],"isolation":[50],"transistors.":[51],"The":[52],"proposed":[53,82,197],"avoid":[58],"current,":[62],"drastically":[63],"decreasing":[64],"its":[65],"leakage":[66,77],"power":[67,78,112,206],"consumption.":[68],"At":[69],"supply":[71],"voltage":[72],"0.6":[74],"V,":[75],"consumption":[79,113],"is":[87,114],"approximately":[88,115],"four":[89],"orders":[90],"magnitude":[92],"lower":[93,119],"than":[94,120,148,164,176,186],"those":[95,121,149,165,177],"outward-facing":[98],"access":[99,128],"transistor":[100],"6T":[101],"(O_6T)/7T":[102],"and":[103,117,125,141,153,157,168,181],"Schmitt-Trigger":[105],"(ST_10T)":[107],"cells;":[109],"write":[111,160,184],"97%":[116],"98%":[118],"O_6T/7T/ST_10T":[124,179],"combinational":[127],"(CA_10T)":[130],"cells,":[132,155,180],"respectively.":[133],"Moreover,":[134],"exhibits":[139],"20%":[140,171],"57%":[142],"higher":[143,159,172],"read":[144],"noise":[146,162],"margin(RSNM)":[147],"O_6T/7T":[152,167],"ST_10T":[154],"115%":[156],"411%":[158],"margin(WSNM)":[163],"CA_10T,":[169],"respectively,":[170],"hold":[173],"noise(HSNM)":[175],"89.8%":[182],"lesser":[183],"delay":[185],"that":[187,195],"CA_10T":[189],"at":[190],"VDD":[191],"=":[192],"0.6V,":[193],"indicating":[194],"has":[201],"great":[202],"ultra-low":[205],"applications.":[207]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":5}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}