{"id":"https://openalex.org/W2952738319","doi":"https://doi.org/10.1109/tcsii.2019.2922921","title":"Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells With Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating","display_name":"Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells With Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating","publication_year":2019,"publication_date":"2019-06-13","ids":{"openalex":"https://openalex.org/W2952738319","doi":"https://doi.org/10.1109/tcsii.2019.2922921","mag":"2952738319"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2019.2922921","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2019.2922921","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5068960788","display_name":"Michael A. Turi","orcid":"https://orcid.org/0000-0002-9171-5305"},"institutions":[{"id":"https://openalex.org/I142934699","display_name":"California State University, Fullerton","ror":"https://ror.org/02avqqw26","country_code":"US","type":"education","lineage":["https://openalex.org/I142934699"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Michael A. Turi","raw_affiliation_strings":["Computer Engineering Program, California State University, Fullerton, USA"],"affiliations":[{"raw_affiliation_string":"Computer Engineering Program, California State University, Fullerton, USA","institution_ids":["https://openalex.org/I142934699"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5057615824","display_name":"J.G. Delgado-Frias","orcid":"https://orcid.org/0000-0002-7026-9991"},"institutions":[{"id":"https://openalex.org/I72951846","display_name":"Washington State University","ror":"https://ror.org/05dk0ce17","country_code":"US","type":"education","lineage":["https://openalex.org/I72951846"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jose G. Delgado-Frias","raw_affiliation_strings":["School of Electrical Engineering and Computer Science, Washington State University, Pullman, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering and Computer Science, Washington State University, Pullman, USA","institution_ids":["https://openalex.org/I72951846"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5068960788"],"corresponding_institution_ids":["https://openalex.org/I142934699"],"apc_list":null,"apc_paid":null,"fwci":2.8615,"has_fulltext":false,"cited_by_count":51,"citation_normalized_percentile":{"value":0.9118336,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":97,"max":99},"biblio":{"volume":"67","issue":"4","first_page":"765","last_page":"769"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/power-gating","display_name":"Power gating","score":0.8680795431137085},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.847486674785614},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.7883071899414062},{"id":"https://openalex.org/keywords/leakage-power","display_name":"Leakage power","score":0.7688618302345276},{"id":"https://openalex.org/keywords/gating","display_name":"Gating","score":0.6694085001945496},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6374350786209106},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.49168115854263306},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4897048771381378},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.43845948576927185},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.35572463274002075},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2282135784626007},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.20733195543289185},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.18244785070419312}],"concepts":[{"id":"https://openalex.org/C2780700455","wikidata":"https://www.wikidata.org/wiki/Q7236515","display_name":"Power gating","level":4,"score":0.8680795431137085},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.847486674785614},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.7883071899414062},{"id":"https://openalex.org/C2987719587","wikidata":"https://www.wikidata.org/wiki/Q1811428","display_name":"Leakage power","level":4,"score":0.7688618302345276},{"id":"https://openalex.org/C194544171","wikidata":"https://www.wikidata.org/wiki/Q21105679","display_name":"Gating","level":2,"score":0.6694085001945496},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6374350786209106},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.49168115854263306},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4897048771381378},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.43845948576927185},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.35572463274002075},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2282135784626007},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.20733195543289185},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.18244785070419312},{"id":"https://openalex.org/C42407357","wikidata":"https://www.wikidata.org/wiki/Q521","display_name":"Physiology","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2019.2922921","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2019.2922921","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.9100000262260437,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1538135030","https://openalex.org/W1549870384","https://openalex.org/W1628937093","https://openalex.org/W1998525920","https://openalex.org/W2002612140","https://openalex.org/W2014347993","https://openalex.org/W2049498569","https://openalex.org/W2098286658","https://openalex.org/W2105874609","https://openalex.org/W2107503597","https://openalex.org/W2126810113","https://openalex.org/W2320182080","https://openalex.org/W2560447416","https://openalex.org/W2592375825","https://openalex.org/W2914119193","https://openalex.org/W3103339143","https://openalex.org/W4231902629","https://openalex.org/W4393848985","https://openalex.org/W6632463870","https://openalex.org/W6700605506"],"related_works":["https://openalex.org/W2259094912","https://openalex.org/W2297319780","https://openalex.org/W2178217057","https://openalex.org/W1972800815","https://openalex.org/W3092470009","https://openalex.org/W2004834197","https://openalex.org/W2952738319","https://openalex.org/W1970386983","https://openalex.org/W2404323568","https://openalex.org/W4378175625"],"abstract_inverted_index":{"Power":[0],"gating":[1,27,61,122,134,180,217],"is":[2,212],"commonly":[3],"used":[4],"to":[5,35,110,142,171],"reduce":[6,36,173],"leakage":[7,12,38,106,116,130,144,164,174],"current":[8,13,107,145],"in":[9,129,223],"SRAM":[10,19,50,85,112,138,160,186,197,204],"memories;":[11],"has":[14],"a":[15,100],"large":[16],"impact":[17],"on":[18,25],"energy":[20],"consumption.":[21],"We":[22,52],"first":[23],"focus":[24],"power":[26,39,60,93,121,133,179,216],"FinFET":[28,49,185,196],"SRAMs":[29],"and":[30,40,82,91,104,151,218,241],"then":[31],"evaluate":[32],"three":[33],"techniques":[34,227],"the":[37,54,76,118,126,166,182,193,220],"energy-delay":[41],"product":[42],"(EDP)":[43],"of":[44,75],"sixand":[45],"eight-transistor":[46],"(6T,":[47],"8T)":[48],"cells.":[51],"compare":[53],"EDP":[55,188],"savings":[56],"obtained":[57],"using:":[58],"1)":[59],"FinFETs;":[62,96],"2)":[63],"near-threshold":[64,169,210],"operation":[65,170,177,211],"at":[66],"V":[67,73],"<sub":[68],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[69],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">DD</sub>":[70],"=":[71,79],"0.6":[72],"instead":[74],"nominal":[77],"VDD":[78],"1":[80],"V;":[81],"3)":[83],"alternative":[84],"cells":[86,113,139,161],"with":[87,114,162,209],"shorted":[88],"gate":[89,103],"(SG)":[90],"low":[92],"(LP)":[94],"configured":[95],"LP":[97,202],"configuration":[98],"reverse-biases":[99],"FinFET's":[101],"back":[102],"reduces":[105,181],"by":[108,229],"up":[109],"97%.":[111],"higher":[115],"benefit":[117,165],"most":[119,167],"from":[120,168],"since":[123],"they":[124],"see":[125],"largest":[127,221],"reductions":[128,222],"current.":[131,175],"Sharing":[132],"transistors":[135],"among":[136],"multiple":[137],"can":[140,155,232],"lead":[141],"more":[143,190,213],"savings,":[146],"but":[147,199],"causes":[148],"slower":[149],"read":[150],"write":[152],"speeds":[153],"which":[154],"diminish":[156],"their":[157],"effectiveness.":[158],"Alternative":[159],"lower":[163],"further":[172],"Near-threshold":[176],"and/or":[178],"6T":[183],"SG":[184,195],"scheme's":[187],"slightly":[189],"than":[191,215],"using":[192,200],"8T":[194,203],"scheme,":[198,205],"an":[201],"such":[206],"as":[207],"LP_INV1.2,":[208],"effective":[214],"provides":[219],"EDP.":[224],"The":[225],"design":[226],"recommended":[228],"this":[230],"brief":[231],"enable":[233],"longer":[234],"battery":[235],"life":[236],"for":[237,245],"small":[238],"sensor":[239],"systems":[240],"thus":[242],"greater":[243],"reliability":[244],"Internet-of-Things":[246],"(IoT)":[247],"devices.":[248]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":8},{"year":2024,"cited_by_count":8},{"year":2023,"cited_by_count":10},{"year":2022,"cited_by_count":11},{"year":2021,"cited_by_count":7},{"year":2020,"cited_by_count":6}],"updated_date":"2026-02-25T08:12:03.925757","created_date":"2025-10-10T00:00:00"}