{"id":"https://openalex.org/W2914665169","doi":"https://doi.org/10.1109/tcsii.2019.2896164","title":"GC-eDRAM With Body-Bias Compensated Readout and Error Detection in 28-nm FD-SOI","display_name":"GC-eDRAM With Body-Bias Compensated Readout and Error Detection in 28-nm FD-SOI","publication_year":2019,"publication_date":"2019-01-30","ids":{"openalex":"https://openalex.org/W2914665169","doi":"https://doi.org/10.1109/tcsii.2019.2896164","mag":"2914665169"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2019.2896164","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2019.2896164","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://infoscience.epfl.ch/record/273476","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5034618529","display_name":"Robert Giterman","orcid":"https://orcid.org/0000-0002-1410-4746"},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":true,"raw_author_name":"Robert Giterman","raw_affiliation_strings":["Telecommunications Circuits Laboratory, Institute of Electrical Engineering, EPFL, Lausanne, Switzerland"],"raw_orcid":"https://orcid.org/0000-0002-3845-4580","affiliations":[{"raw_affiliation_string":"Telecommunications Circuits Laboratory, Institute of Electrical Engineering, EPFL, Lausanne, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078908633","display_name":"Andrea Bonetti","orcid":"https://orcid.org/0000-0002-0135-5095"},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Andrea Bonetti","raw_affiliation_strings":["Telecommunications Circuits Laboratory, Institute of Electrical Engineering, EPFL, Lausanne, Switzerland"],"raw_orcid":"https://orcid.org/0000-0002-0135-5095","affiliations":[{"raw_affiliation_string":"Telecommunications Circuits Laboratory, Institute of Electrical Engineering, EPFL, Lausanne, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059133771","display_name":"Andreas Burg","orcid":"https://orcid.org/0000-0002-7270-5558"},"institutions":[{"id":"https://openalex.org/I5124864","display_name":"\u00c9cole Polytechnique F\u00e9d\u00e9rale de Lausanne","ror":"https://ror.org/02s376052","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I5124864"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Andreas Burg","raw_affiliation_strings":["Telecommunications Circuits Laboratory, Institute of Electrical Engineering, EPFL, Lausanne, Switzerland"],"raw_orcid":"https://orcid.org/0000-0002-7270-5558","affiliations":[{"raw_affiliation_string":"Telecommunications Circuits Laboratory, Institute of Electrical Engineering, EPFL, Lausanne, Switzerland","institution_ids":["https://openalex.org/I5124864"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026444183","display_name":"Adam Teman","orcid":"https://orcid.org/0000-0002-8233-4711"},"institutions":[{"id":"https://openalex.org/I13955877","display_name":"Bar-Ilan University","ror":"https://ror.org/03kgsv495","country_code":"IL","type":"education","lineage":["https://openalex.org/I13955877"]}],"countries":["IL"],"is_corresponding":false,"raw_author_name":"Adam Teman","raw_affiliation_strings":["Emerging Nanoscaled Integrated Circuits and Systems Labs, Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel"],"raw_orcid":"https://orcid.org/0000-0002-8233-4711","affiliations":[{"raw_affiliation_string":"Emerging Nanoscaled Integrated Circuits and Systems Labs, Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel","institution_ids":["https://openalex.org/I13955877"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5034618529"],"corresponding_institution_ids":["https://openalex.org/I5124864"],"apc_list":null,"apc_paid":null,"fwci":0.9686,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.75637262,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":"66","issue":"12","first_page":"2042","last_page":"2046"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.8058278560638428},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4384616017341614},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4252597689628601},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3229570984840393},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19418182969093323},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.10097390413284302}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.8058278560638428},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4384616017341614},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4252597689628601},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3229570984840393},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19418182969093323},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.10097390413284302}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/tcsii.2019.2896164","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2019.2896164","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},{"id":"pmh:oai:infoscience.epfl.ch:273476","is_oa":true,"landing_page_url":"http://infoscience.epfl.ch/record/273476","pdf_url":null,"source":{"id":"https://openalex.org/S4306400487","display_name":"Infoscience (Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne)","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://infoscience.epfl.ch/record/273476","raw_type":"Text"}],"best_oa_location":{"id":"pmh:oai:infoscience.epfl.ch:273476","is_oa":true,"landing_page_url":"http://infoscience.epfl.ch/record/273476","pdf_url":null,"source":{"id":"https://openalex.org/S4306400487","display_name":"Infoscience (Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne)","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"http://infoscience.epfl.ch/record/273476","raw_type":"Text"},"sustainable_development_goals":[{"score":0.8999999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1619268095","https://openalex.org/W1692694227","https://openalex.org/W1827639723","https://openalex.org/W2070379576","https://openalex.org/W2091764549","https://openalex.org/W2092582556","https://openalex.org/W2289910803","https://openalex.org/W2511568025","https://openalex.org/W2524282698","https://openalex.org/W2528373198","https://openalex.org/W2733005606","https://openalex.org/W2754347129","https://openalex.org/W2765125965","https://openalex.org/W2791296263","https://openalex.org/W2800944932","https://openalex.org/W2887937160","https://openalex.org/W6754429305"],"related_works":["https://openalex.org/W2902546961","https://openalex.org/W2399397734","https://openalex.org/W2099376691","https://openalex.org/W2292675962","https://openalex.org/W2139871202","https://openalex.org/W3127524829","https://openalex.org/W2769410768","https://openalex.org/W320005788","https://openalex.org/W4313653414","https://openalex.org/W2121524308"],"abstract_inverted_index":{"Gain-cell":[0],"embedded":[1,59],"DRAM":[2,60],"(GC-eDRAM)":[3,61],"is":[4,34,67,111],"an":[5],"attractive":[6],"alternative":[7],"to":[8,12,29,37,70,94,113,118,125,156,162,172],"conventional":[9,174],"SRAM":[10],"due":[11,36],"its":[13,21],"high-density,":[14],"low-leakage,":[15],"and":[16,49,139,160,168],"inherent":[17],"two-ported":[18],"functionality.":[19],"However,":[20],"dynamic":[22],"storage":[23],"mechanism":[24,117],"requires":[25],"power-hungry":[26],"refresh":[27],"cycles":[28],"maintain":[30],"data.":[31],"This":[32],"problem":[33],"aggravated":[35],"the":[38,72,78,88,96,100,119,151],"impact":[39],"of":[40,77,91,99,150],"process-voltage-temperature":[41],"(PVT)":[42],"variations":[43,170],"at":[44],"deeply":[45],"scaled":[46],"technology":[47,93],"nodes":[48],"low":[50],"voltages.":[51],"In":[52],"this":[53],"brief,":[54],"we":[55],"present":[56],"a":[57,115,173],"gain-cell":[58],"with":[62,134],"body-bias":[63,136],"compensated":[64,137],"readout,":[65],"which":[66],"dynamically":[68],"configured":[69],"extend":[71],"data":[73],"retention":[74],"time":[75],"(DRT)":[76],"memory":[79,177],"under":[80,103,166],"varying":[81],"operating":[82],"conditions.":[83],"The":[84],"proposed":[85],"GC-eDRAM":[86,133],"exploits":[87],"body-biasing":[89],"capabilities":[90],"FD-SOI":[92,146],"adjust":[95],"switching":[97],"threshold":[98],"sense":[101,109],"inverter":[102,110],"PVT":[104,167],"variations.":[105],"An":[106,131],"additional,":[107],"unbiased,":[108],"added":[112],"provide":[114],"dual-sampling":[116],"readout":[120,138],"path,":[121],"enabling":[122],"error":[123,140],"detection":[124,141],"further":[126],"reduce":[127],"design":[128],"guard":[129,175],"bands.":[130],"8-kb":[132],"integrated":[135],"was":[142],"implemented":[143],"in":[144],"28-nm":[145],"technology.":[147],"Silicon":[148],"measurements":[149],"manufactured":[152],"array":[153],"demonstrate":[154],"up":[155,161],"75%":[157],"DRT":[158],"improvement":[159],"86%":[163],"energy":[164],"savings":[165],"frequency":[169],"compared":[171],"banded":[176],"design.":[178]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":1}],"updated_date":"2026-05-03T08:25:01.440150","created_date":"2025-10-10T00:00:00"}