{"id":"https://openalex.org/W2888731744","doi":"https://doi.org/10.1109/tcsii.2018.2867016","title":"Floating Bulk Cascode Class-E Power Amplifier","display_name":"Floating Bulk Cascode Class-E Power Amplifier","publication_year":2018,"publication_date":"2018-08-24","ids":{"openalex":"https://openalex.org/W2888731744","doi":"https://doi.org/10.1109/tcsii.2018.2867016","mag":"2888731744"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2018.2867016","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2018.2867016","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5044562724","display_name":"A. R. Dehqan","orcid":null},"institutions":[{"id":"https://openalex.org/I99861883","display_name":"University of Zanjan","ror":"https://ror.org/05e34ej29","country_code":"IR","type":"education","lineage":["https://openalex.org/I99861883"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"A. R. Dehqan","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Zanjan, Zanjan, Iran"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Zanjan, Zanjan, Iran","institution_ids":["https://openalex.org/I99861883"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017596278","display_name":"Siroos Toofan","orcid":"https://orcid.org/0000-0002-1306-9301"},"institutions":[{"id":"https://openalex.org/I99861883","display_name":"University of Zanjan","ror":"https://ror.org/05e34ej29","country_code":"IR","type":"education","lineage":["https://openalex.org/I99861883"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"S. Toofan","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Zanjan, Zanjan, Iran"],"raw_orcid":"https://orcid.org/0000-0002-1306-9301","affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Zanjan, Zanjan, Iran","institution_ids":["https://openalex.org/I99861883"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5054069503","display_name":"Hadi Lotfi","orcid":"https://orcid.org/0000-0002-0066-1891"},"institutions":[{"id":"https://openalex.org/I133529467","display_name":"Sharif University of Technology","ror":"https://ror.org/024c2fq17","country_code":"IR","type":"education","lineage":["https://openalex.org/I133529467"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"H. Lotfi","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Sharif University of Technology, Tehran, Iran"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Sharif University of Technology, Tehran, Iran","institution_ids":["https://openalex.org/I133529467"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.8838,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.75711472,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"66","issue":"4","first_page":"537","last_page":"541"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.9144454002380371},{"id":"https://openalex.org/keywords/common-source","display_name":"Common source","score":0.6911540031433105},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.682477593421936},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6465778946876526},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6225090622901917},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.535510241985321},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.47901099920272827},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.4786021411418915},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.45036906003952026},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.4249987304210663},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3652147650718689},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.34744542837142944},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3303243815898895},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2838122248649597},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23850446939468384},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.2272358238697052},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.05432608723640442}],"concepts":[{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.9144454002380371},{"id":"https://openalex.org/C46917211","wikidata":"https://www.wikidata.org/wiki/Q3098845","display_name":"Common source","level":5,"score":0.6911540031433105},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.682477593421936},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6465778946876526},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6225090622901917},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.535510241985321},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.47901099920272827},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.4786021411418915},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.45036906003952026},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.4249987304210663},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3652147650718689},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.34744542837142944},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3303243815898895},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2838122248649597},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23850446939468384},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.2272358238697052},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.05432608723640442},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2018.2867016","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2018.2867016","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.9100000262260437}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W2135881690","https://openalex.org/W2147437964","https://openalex.org/W2151107544","https://openalex.org/W2320217685","https://openalex.org/W2336483304","https://openalex.org/W2475147411","https://openalex.org/W2530610040","https://openalex.org/W2675182538","https://openalex.org/W2766911416","https://openalex.org/W2788359119"],"related_works":["https://openalex.org/W1947910726","https://openalex.org/W1803710800","https://openalex.org/W2810696447","https://openalex.org/W2156032344","https://openalex.org/W2793910621","https://openalex.org/W1570133623","https://openalex.org/W2777620301","https://openalex.org/W2545832514","https://openalex.org/W2754054393","https://openalex.org/W2819331734","https://openalex.org/W2275669542","https://openalex.org/W2275090026","https://openalex.org/W2351755610","https://openalex.org/W2778574890","https://openalex.org/W377070291","https://openalex.org/W2330856862","https://openalex.org/W1582610598","https://openalex.org/W3011154028","https://openalex.org/W174061468","https://openalex.org/W937205325"],"abstract_inverted_index":{"In":[0,63,128],"this":[1,64],"brief,":[2],"the":[3,7,13,19,23,45,49,66,69,76,84,88,93,109,112,125,130,134,146,150,158,169,172],"switching":[4],"behavior":[5],"of":[6,25,58,68,92,100,105,111,124,133,149,171],"cascode":[8,20,50,176],"topology":[9,53],"is":[10,73,137,179],"improved":[11],"through":[12,78],"floating":[14],"bulk":[15,67],"(FB)":[16],"technique.":[17],"Although":[18],"structure":[21],"has":[22,40],"advantage":[24],"reducing":[26],"voltage":[27,132,148],"stress":[28],"on":[29,140],"transistors,":[30],"its":[31],"parasitic":[32,85,106],"elements":[33],"increase":[34],"power":[35,46,59,159],"loss.":[36],"The":[37],"FB":[38,173],"technique":[39],"been":[41],"proposed":[42],"to":[43,75],"alleviate":[44],"loss":[47,160],"in":[48,56,161,181],"class-E":[51,177],"PA":[52,178],"which":[54,144],"results":[55],"enhancement":[57],"added":[60],"efficiency":[61],"(PAE).":[62],"method,":[65],"common-gate":[70],"(CG)":[71],"transistor":[72,95],"connected":[74],"ground":[77],"a":[79,82,97,175,182],"resistor.":[80],"As":[81],"result,":[83],"capacitances":[86],"between":[87],"drain":[89,110],"and":[90,141,164,193],"source":[91],"CG":[94,126,135,165],"create":[96],"new":[98,117],"path":[99,119],"current":[101,118],"that":[102],"accelerates":[103],"charging":[104],"capacitance":[107],"at":[108,187],"common-source":[113],"(CS)":[114],"transistor.":[115,127],"This":[116],"speeds":[120],"up":[121],"on-to-off":[122],"transition":[123],"addition,":[129],"threshold":[131],"device":[136],"increased":[138],"during":[139],"off":[142],"transitions":[143],"lowers":[145],"drain-source":[147],"CS":[151,163],"device.":[152],"Concurrently,":[153],"these":[154],"two":[155],"phenomena":[156],"minimize":[157],"both":[162],"transistors.":[166],"To":[167],"demonstrate":[168],"functionality":[170],"technique,":[174],"implemented":[180],"0.18-\u03bcm":[183],"CMOS":[184],"TSMC":[185],"process":[186],"1.8":[188],"GHz":[189],"with":[190],"52%":[191],"PAE":[192],"27":[194],"dBm":[195],"maximum":[196],"output":[197],"power.":[198]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":4}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}