{"id":"https://openalex.org/W2790999263","doi":"https://doi.org/10.1109/tcsii.2018.2815994","title":"A Highly Power-Efficient Single-Inductor Bipolar-Output DC\u2013DC Converter Using Hysteretic Skipping Control for OLED-on-Silicon Microdisplays","display_name":"A Highly Power-Efficient Single-Inductor Bipolar-Output DC\u2013DC Converter Using Hysteretic Skipping Control for OLED-on-Silicon Microdisplays","publication_year":2018,"publication_date":"2018-03-15","ids":{"openalex":"https://openalex.org/W2790999263","doi":"https://doi.org/10.1109/tcsii.2018.2815994","mag":"2790999263"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2018.2815994","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2018.2815994","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069482358","display_name":"Bong\u2010Choon Kwak","orcid":"https://orcid.org/0000-0001-6937-3284"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Bong-Choon Kwak","raw_affiliation_strings":["Department of Electronic Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0001-6937-3284","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011841625","display_name":"Seong\u2010Kwan Hong","orcid":"https://orcid.org/0000-0002-2364-3311"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Kwan Hong","raw_affiliation_strings":["Department of Electronic Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-2364-3311","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5034769470","display_name":"Oh\u2010Kyong Kwon","orcid":"https://orcid.org/0000-0003-0088-5198"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Oh-Kyong Kwon","raw_affiliation_strings":["Department of Electronic Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-0088-5198","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4575257"],"apc_list":null,"apc_paid":null,"fwci":0.6942,"has_fulltext":false,"cited_by_count":28,"citation_normalized_percentile":{"value":0.68539962,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"65","issue":"12","first_page":"2017","last_page":"2021"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10338","display_name":"Advanced Sensor and Energy Harvesting Materials","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6185774803161621},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5515097975730896},{"id":"https://openalex.org/keywords/oled","display_name":"OLED","score":0.5452331900596619},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5226366519927979},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.48448869585990906},{"id":"https://openalex.org/keywords/inductor","display_name":"Inductor","score":0.4675285816192627},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4499751031398773},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.44442465901374817},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.4117882251739502},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.40320101380348206},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.26200416684150696},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16862407326698303},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.12739816308021545}],"concepts":[{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6185774803161621},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5515097975730896},{"id":"https://openalex.org/C150759737","wikidata":"https://www.wikidata.org/wiki/Q209593","display_name":"OLED","level":3,"score":0.5452331900596619},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5226366519927979},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.48448869585990906},{"id":"https://openalex.org/C144534570","wikidata":"https://www.wikidata.org/wiki/Q5325","display_name":"Inductor","level":3,"score":0.4675285816192627},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4499751031398773},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.44442465901374817},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.4117882251739502},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.40320101380348206},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.26200416684150696},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16862407326698303},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12739816308021545},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2018.2815994","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2018.2815994","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8500000238418579,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1966175236","https://openalex.org/W1976929284","https://openalex.org/W2009545239","https://openalex.org/W2042634963","https://openalex.org/W2120176790","https://openalex.org/W2134485125","https://openalex.org/W2171958268","https://openalex.org/W2484106186","https://openalex.org/W2498062958"],"related_works":["https://openalex.org/W1123907903","https://openalex.org/W2188292807","https://openalex.org/W2288334746","https://openalex.org/W2378970241","https://openalex.org/W2167605257","https://openalex.org/W4250248449","https://openalex.org/W2566975853","https://openalex.org/W2575508574","https://openalex.org/W2229772108","https://openalex.org/W1476329806"],"abstract_inverted_index":{"In":[0,63,174],"this":[1],"brief,":[2],"a":[3,93,100,105,142],"highly":[4],"power-efficient":[5],"single-inductor":[6],"bipolar-output":[7],"(SIBO)":[8],"DC-DC":[9,38,88],"converter":[10,39,89],"is":[11,181],"proposed":[12,36,86],"for":[13,92],"use":[14],"as":[15],"the":[16,51,67,130,176],"pixel":[17,82],"power":[18,61,179],"supply":[19],"of":[20,53,97,122,132,145,152,165],"organic":[21],"light-emitting":[22],"diode-on-silicon":[23],"microdisplays,":[24],"which":[25],"are":[26],"used":[27],"in":[28,57,60],"virtual":[29],"reality":[30,33],"and":[31,104,137,157,170],"augmented":[32],"applications.":[34],"The":[35,85,125,148,161],"SIBO":[37,87],"regulates":[40,66],"its":[41],"negative":[42],"output":[43,69],"voltage":[44,70,120],"(VON)":[45],"using":[46,112],"hysteretic":[47],"skipping":[48],"to":[49],"reduce":[50],"number":[52],"switching":[54],"operations,":[55],"resulting":[56],"an":[58],"increase":[59],"efficiency.":[62],"addition,":[64,175],"it":[65],"positive":[68],"(VOP)":[71],"with":[72,118],"higher":[73],"priority":[74],"than":[75],"VON,":[76],"thus":[77],"having":[78],"little":[79],"influence":[80],"on":[81],"luminance":[83],"variations.":[84],"was":[90,110],"designed":[91],"maximum":[94,178],"load":[95,143,150],"current":[96,144],"30":[98],"mA,":[99],"VOPof":[101],"4.80":[102],"V,":[103],"VONof":[106],"-2.50":[107],"V.":[108,124],"It":[109],"fabricated":[111],"90-nm":[113],"standard":[114],"CMOS":[115],"process":[116],"technology":[117],"high":[119],"devices":[121],"8":[123],"measurement":[126],"results":[127],"show":[128],"that":[129],"ripples":[131],"VOPand":[133,153,166],"VONare":[134,154,167],"17":[135],"mV":[136],"50":[138],"mV,":[139],"respectively,":[140],"at":[141],"20":[146],"mA.":[147],"measured":[149,162,177],"regulations":[151,164],"0.03":[155],"mV/mA":[156],"0.06":[158],"mV/mA,":[159],"respectively.":[160,173],"line":[163],"1.25":[168],"mV/V":[169],"2.50":[171],"mV/V,":[172],"efficiency":[180],"90.1%.":[182]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":6},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":1}],"updated_date":"2026-08-12T21:12:35.861297","created_date":"2025-10-10T00:00:00"}