{"id":"https://openalex.org/W2743322999","doi":"https://doi.org/10.1109/tcsii.2017.2735022","title":"A Simplified Transistor-Based Analog Predistorter for a GaN Power Amplifier","display_name":"A Simplified Transistor-Based Analog Predistorter for a GaN Power Amplifier","publication_year":2017,"publication_date":"2017-08-02","ids":{"openalex":"https://openalex.org/W2743322999","doi":"https://doi.org/10.1109/tcsii.2017.2735022","mag":"2743322999"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2017.2735022","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2017.2735022","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5019714319","display_name":"Qi Cai","orcid":"https://orcid.org/0000-0003-0201-824X"},"institutions":[{"id":"https://openalex.org/I36399199","display_name":"Nanjing University of Science and Technology","ror":"https://ror.org/00xp9wg62","country_code":"CN","type":"education","lineage":["https://openalex.org/I36399199"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Qi Cai","raw_affiliation_strings":["School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0003-0201-824X","affiliations":[{"raw_affiliation_string":"School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, China","institution_ids":["https://openalex.org/I36399199"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071149976","display_name":"Wenquan Che","orcid":"https://orcid.org/0000-0002-9388-6570"},"institutions":[{"id":"https://openalex.org/I36399199","display_name":"Nanjing University of Science and Technology","ror":"https://ror.org/00xp9wg62","country_code":"CN","type":"education","lineage":["https://openalex.org/I36399199"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wenquan Che","raw_affiliation_strings":["School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0002-9388-6570","affiliations":[{"raw_affiliation_string":"School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, China","institution_ids":["https://openalex.org/I36399199"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030141198","display_name":"Kaixue Ma","orcid":"https://orcid.org/0000-0001-8657-2920"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kaixue Ma","raw_affiliation_strings":["University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0001-8657-2920","affiliations":[{"raw_affiliation_string":"University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100659126","display_name":"Mi Zhang","orcid":"https://orcid.org/0000-0002-4826-369X"},"institutions":[{"id":"https://openalex.org/I36399199","display_name":"Nanjing University of Science and Technology","ror":"https://ror.org/00xp9wg62","country_code":"CN","type":"education","lineage":["https://openalex.org/I36399199"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Mi Zhang","raw_affiliation_strings":["School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, China","institution_ids":["https://openalex.org/I36399199"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5019714319"],"corresponding_institution_ids":["https://openalex.org/I36399199"],"apc_list":null,"apc_paid":null,"fwci":2.0455,"has_fulltext":false,"cited_by_count":49,"citation_normalized_percentile":{"value":0.87725971,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":99},"biblio":{"volume":"65","issue":"3","first_page":"326","last_page":"330"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9962999820709229,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/intermodulation","display_name":"Intermodulation","score":0.8378236293792725},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.767204761505127},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5253255367279053},{"id":"https://openalex.org/keywords/adjacent-channel","display_name":"Adjacent channel","score":0.5098696947097778},{"id":"https://openalex.org/keywords/dbm","display_name":"dBm","score":0.49379763007164},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.47185656428337097},{"id":"https://openalex.org/keywords/gain-compression","display_name":"Gain compression","score":0.4707620441913605},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.43036195635795593},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.42797166109085083},{"id":"https://openalex.org/keywords/adjacent-channel-power-ratio","display_name":"Adjacent channel power ratio","score":0.42182183265686035},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4030068814754486},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3138100504875183},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.24639663100242615},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23670193552970886},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13765227794647217}],"concepts":[{"id":"https://openalex.org/C11773624","wikidata":"https://www.wikidata.org/wiki/Q2142232","display_name":"Intermodulation","level":4,"score":0.8378236293792725},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.767204761505127},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5253255367279053},{"id":"https://openalex.org/C2776908912","wikidata":"https://www.wikidata.org/wiki/Q16001834","display_name":"Adjacent channel","level":4,"score":0.5098696947097778},{"id":"https://openalex.org/C94105702","wikidata":"https://www.wikidata.org/wiki/Q777017","display_name":"dBm","level":4,"score":0.49379763007164},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.47185656428337097},{"id":"https://openalex.org/C58760974","wikidata":"https://www.wikidata.org/wiki/Q5517216","display_name":"Gain compression","level":4,"score":0.4707620441913605},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.43036195635795593},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.42797166109085083},{"id":"https://openalex.org/C2776191232","wikidata":"https://www.wikidata.org/wiki/Q4683143","display_name":"Adjacent channel power ratio","level":5,"score":0.42182183265686035},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4030068814754486},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3138100504875183},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.24639663100242615},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23670193552970886},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13765227794647217}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2017.2735022","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2017.2735022","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G2304221464","display_name":null,"funder_award_id":"61571231","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G2453621736","display_name":null,"funder_award_id":"61401206","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G4837659062","display_name":null,"funder_award_id":"61627802","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1948132114","https://openalex.org/W2057310082","https://openalex.org/W2093792745","https://openalex.org/W2096551113","https://openalex.org/W2104183221","https://openalex.org/W2107067712","https://openalex.org/W2119554111","https://openalex.org/W2126755763","https://openalex.org/W2129300366","https://openalex.org/W2130370545","https://openalex.org/W2134003995","https://openalex.org/W2137341371","https://openalex.org/W2150773740","https://openalex.org/W2529604120","https://openalex.org/W6728139443"],"related_works":["https://openalex.org/W2169042069","https://openalex.org/W2099917477","https://openalex.org/W4247235369","https://openalex.org/W2156054605","https://openalex.org/W2123552350","https://openalex.org/W2021418895","https://openalex.org/W2116450103","https://openalex.org/W2782548422","https://openalex.org/W2093792745","https://openalex.org/W2107380281"],"abstract_inverted_index":{"A":[0],"simplified":[1],"transistor-based":[2],"analog":[3],"predistorter":[4],"(APD)":[5],"is":[6,29,48,70,84,90],"proposed":[7,18,46,68],"and":[8,50],"used":[9],"to":[10,75],"linearize":[11],"a":[12,36,104,112],"GaN":[13,37,64],"power":[14,38,109,128],"amplifier":[15,39],"(PA).":[16],"The":[17],"APD":[19,47,69],"features":[20],"simple":[21],"circuit":[22],"topology":[23],"because":[24],"no":[25],"additional":[26],"vector":[27],"modulator":[28],"needed.":[30],"To":[31],"demonstrate":[32,123],"the":[33,45,53,56,63,67,82,120],"new":[34],"methodology,":[35],"centered":[40],"at":[41,117],"2.4":[42,118],"GHz":[43],"using":[44],"implemented":[49],"tested.":[51],"From":[52],"measurement":[54],"results,":[55],"output":[57,108],"1-dB":[58],"gain":[59],"compression":[60],"point":[61],"of":[62,107,131],"PA":[65],"with":[66],"increased":[71,85],"from":[72],"35.2":[73],"dBm":[74,77],"38.9":[76],"under":[78],"CW":[79],"signal,":[80],"while":[81],"efficiency":[83],"by":[86],"8.5%.":[87],"Two-tone":[88],"test":[89],"also":[91],"implemented,":[92],"indicating":[93],"more":[94],"than":[95],"10":[96],"dB":[97],"third":[98],"order":[99],"intermodulation":[100],"distortions":[101],"improvement":[102],"over":[103],"wide":[105],"range":[106],"levels.":[110],"For":[111],"single-carrier":[113],"downlink":[114],"WCDMA":[115],"signal":[116],"GHz,":[119],"experimental":[121],"results":[122],"an":[124],"adjacent":[125],"channel":[126],"leakage":[127],"ratio":[129],"reduction":[130],"13":[132],"dB.":[133]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":7},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":12},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":6},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":3}],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2025-10-10T00:00:00"}