{"id":"https://openalex.org/W2121686345","doi":"https://doi.org/10.1109/tcsii.2011.2158723","title":"Design of 24-GHz High-Gain Receiver Front-End Utilizing ESD-Split Input Matching Network","display_name":"Design of 24-GHz High-Gain Receiver Front-End Utilizing ESD-Split Input Matching Network","publication_year":2011,"publication_date":"2011-07-07","ids":{"openalex":"https://openalex.org/W2121686345","doi":"https://doi.org/10.1109/tcsii.2011.2158723","mag":"2121686345"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2011.2158723","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2011.2158723","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101810550","display_name":"Hongrui Wang","orcid":"https://orcid.org/0000-0002-2916-8849"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongrui Wang","raw_affiliation_strings":["Institute of Microelectronics, Tsinghua University, Beijing, China","Inst. of Microelectron., Tsinghua Univ., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I99065089"]},{"raw_affiliation_string":"Inst. of Microelectron., Tsinghua Univ., Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101846633","display_name":"Lei Zhang","orcid":"https://orcid.org/0000-0003-3545-9439"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lei Zhang","raw_affiliation_strings":["Institute of Microelectronics, Tsinghua University, Beijing, China","Inst. of Microelectron., Tsinghua Univ., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I99065089"]},{"raw_affiliation_string":"Inst. of Microelectron., Tsinghua Univ., Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100425409","display_name":"Li Zhang","orcid":"https://orcid.org/0000-0001-5776-4552"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Li Zhang","raw_affiliation_strings":["Institute of Microelectronics, Tsinghua University, Beijing, China","Inst. of Microelectron., Tsinghua Univ., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I99065089"]},{"raw_affiliation_string":"Inst. of Microelectron., Tsinghua Univ., Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074086125","display_name":"Yan Wang","orcid":"https://orcid.org/0000-0001-9217-6983"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yan Wang","raw_affiliation_strings":["Institute of Microelectronics, Tsinghua University, Beijing, China","Inst. of Microelectron., Tsinghua Univ., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I99065089"]},{"raw_affiliation_string":"Inst. of Microelectron., Tsinghua Univ., Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100433433","display_name":"Zhiping Yu","orcid":"https://orcid.org/0000-0001-8701-8438"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I99065089","display_name":"Tsinghua University","ror":"https://ror.org/03cve4549","country_code":"CN","type":"education","lineage":["https://openalex.org/I99065089"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhiping Yu","raw_affiliation_strings":["Institute of Microelectronics, Tsinghua University, Beijing, China","Inst. of Microelectron., Tsinghua Univ., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Tsinghua University, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I99065089"]},{"raw_affiliation_string":"Inst. of Microelectron., Tsinghua Univ., Beijing, China","institution_ids":["https://openalex.org/I99065089"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.6973,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.76126875,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"58","issue":"8","first_page":"482","last_page":"486"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.7311000227928162},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6251462697982788},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5575458407402039},{"id":"https://openalex.org/keywords/impedance-matching","display_name":"Impedance matching","score":0.5549542903900146},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5510002374649048},{"id":"https://openalex.org/keywords/low-noise-amplifier","display_name":"Low-noise amplifier","score":0.5190240144729614},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.4880937337875366},{"id":"https://openalex.org/keywords/return-loss","display_name":"Return loss","score":0.479512482881546},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.4076237678527832},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3804529905319214},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35901230573654175},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3334464430809021},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2954041659832001},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.19902053475379944},{"id":"https://openalex.org/keywords/antenna","display_name":"Antenna (radio)","score":0.18233036994934082}],"concepts":[{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.7311000227928162},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6251462697982788},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5575458407402039},{"id":"https://openalex.org/C612350","wikidata":"https://www.wikidata.org/wiki/Q1761108","display_name":"Impedance matching","level":3,"score":0.5549542903900146},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5510002374649048},{"id":"https://openalex.org/C155332784","wikidata":"https://www.wikidata.org/wiki/Q1151304","display_name":"Low-noise amplifier","level":4,"score":0.5190240144729614},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.4880937337875366},{"id":"https://openalex.org/C196901423","wikidata":"https://www.wikidata.org/wiki/Q3933836","display_name":"Return loss","level":3,"score":0.479512482881546},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.4076237678527832},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3804529905319214},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35901230573654175},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3334464430809021},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2954041659832001},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.19902053475379944},{"id":"https://openalex.org/C21822782","wikidata":"https://www.wikidata.org/wiki/Q131214","display_name":"Antenna (radio)","level":2,"score":0.18233036994934082}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2011.2158723","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2011.2158723","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.800000011920929}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W618388913","https://openalex.org/W1990140045","https://openalex.org/W1994210551","https://openalex.org/W1995908656","https://openalex.org/W2057297332","https://openalex.org/W2099226677","https://openalex.org/W2100998203","https://openalex.org/W2101163170","https://openalex.org/W2110169479","https://openalex.org/W2110470339","https://openalex.org/W2113258681","https://openalex.org/W2118022574","https://openalex.org/W2119463047","https://openalex.org/W2130144640","https://openalex.org/W2136075060","https://openalex.org/W2142746127","https://openalex.org/W2144396272","https://openalex.org/W2159913949","https://openalex.org/W2538932430","https://openalex.org/W4298334616","https://openalex.org/W6664636251"],"related_works":["https://openalex.org/W2382937231","https://openalex.org/W3000916362","https://openalex.org/W2024400826","https://openalex.org/W2064881384","https://openalex.org/W2515952003","https://openalex.org/W2151988453","https://openalex.org/W2010358330","https://openalex.org/W2134933562","https://openalex.org/W2293552676","https://openalex.org/W4321844076"],"abstract_inverted_index":{"This":[0],"brief":[1],"presents":[2],"an":[3,26,58],"electrostatic":[4],"discharge":[5],"(ESD)-protected":[6],"receiver":[7],"front-end":[8,56],"for":[9,37],"wireless":[10],"communications":[11],"around":[12],"24":[13],"GHz.":[14],"A":[15],"\u03a0-type":[16],"input":[17,41,59],"matching":[18],"network":[19],"incorporating":[20],"two":[21],"split":[22],"ESD":[23,97],"capacitances":[24],"and":[25,43,74,98],"on-chip":[27],"inductor":[28],"is":[29],"constructed":[30],"to":[31,92],"realize":[32],"the":[33,55],"source":[34],"impedance":[35],"transformation":[36],"high":[38],"gain,":[39,70],"good":[40],"matching,":[42],"only":[44],"slightly":[45],"degraded":[46],"noise":[47],"figure":[48],"(NF).":[49],"The":[50,79],"measured":[51],"results":[52],"show":[53],"that":[54],"has":[57,87],"return":[60],"loss":[61],"of":[62,110],"less":[63],"than":[64],"-12":[65],"dB,":[66],"a":[67,71,75,88,103,107],"36-dB":[68],"voltage":[69],"6.8-dB":[72],"NF,":[73],"2-dBm":[76],"output":[77],"CP1dB.":[78],"chip,":[80],"fabricated":[81],"in":[82],"0.13-\u03bcm":[83],"RF":[84],"CMOS":[85],"process,":[86],"protection":[89],"level":[90],"equivalent":[91],"\u00b12-kV":[93],"human":[94],"body":[95],"model":[96],"consumes":[99],"40":[100],"mA":[101],"from":[102],"1.2-V":[104],"supply":[105],"with":[106],"total":[108],"area":[109],"1":[111],"\u00d7":[112],"0.8":[113],"mm2.":[114]},"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-07-29T09:40:50.615796","created_date":"2025-10-10T00:00:00"}