{"id":"https://openalex.org/W2142400505","doi":"https://doi.org/10.1109/tcsii.2010.2050941","title":"0.9 V to 5 V Bidirectional Mixed-Voltage I/O Buffer With an ESD Protection Output Stage","display_name":"0.9 V to 5 V Bidirectional Mixed-Voltage I/O Buffer With an ESD Protection Output Stage","publication_year":2010,"publication_date":"2010-07-01","ids":{"openalex":"https://openalex.org/W2142400505","doi":"https://doi.org/10.1109/tcsii.2010.2050941","mag":"2142400505"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2010.2050941","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2010.2050941","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077220045","display_name":"Chua\u2010Chin Wang","orcid":"https://orcid.org/0000-0002-2426-2879"},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Chua-Chin Wang","raw_affiliation_strings":["Department of Electrical Engineering, National Yat Sen University, Kaohsiung, Taiwan","Dept. of Electr. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, , Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Yat Sen University, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I142974352"]},{"raw_affiliation_string":"Dept. of Electr. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, , Taiwan","institution_ids":["https://openalex.org/I142974352"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071930768","display_name":"Ron-Chi Kuo","orcid":null},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ron-Chi Kuo","raw_affiliation_strings":["Department of Electrical Engineering, National Yat Sen University, Kaohsiung, Taiwan","Dept. of Electr. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, , Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Yat Sen University, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I142974352"]},{"raw_affiliation_string":"Dept. of Electr. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, , Taiwan","institution_ids":["https://openalex.org/I142974352"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5034038138","display_name":"Jen\u2010Wei Liu","orcid":null},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Jen-Wei Liu","raw_affiliation_strings":["Department of Electrical Engineering, National Yat Sen University, Kaohsiung, Taiwan","Dept. of Electr. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, , Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Yat Sen University, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I142974352"]},{"raw_affiliation_string":"Dept. of Electr. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, , Taiwan","institution_ids":["https://openalex.org/I142974352"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5077220045"],"corresponding_institution_ids":["https://openalex.org/I142974352"],"apc_list":null,"apc_paid":null,"fwci":2.0205,"has_fulltext":false,"cited_by_count":14,"citation_normalized_percentile":{"value":0.87935497,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"57","issue":"8","first_page":"612","last_page":"616"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.6995725631713867},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6249372959136963},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6018773913383484},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.49898409843444824},{"id":"https://openalex.org/keywords/buffer","display_name":"Buffer (optical fiber)","score":0.4752523601055145},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.43112313747406006},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.4146155118942261},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.35161781311035156},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1961042881011963},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16612401604652405}],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.6995725631713867},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6249372959136963},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6018773913383484},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.49898409843444824},{"id":"https://openalex.org/C145018004","wikidata":"https://www.wikidata.org/wiki/Q4985944","display_name":"Buffer (optical fiber)","level":2,"score":0.4752523601055145},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.43112313747406006},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.4146155118942261},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35161781311035156},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1961042881011963},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16612401604652405},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2010.2050941","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2010.2050941","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.800000011920929,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2120030291","https://openalex.org/W2151427161","https://openalex.org/W2164902374","https://openalex.org/W2164940593","https://openalex.org/W2542120611"],"related_works":["https://openalex.org/W2217098757","https://openalex.org/W3208688275","https://openalex.org/W2088771128","https://openalex.org/W2263373136","https://openalex.org/W2796085262","https://openalex.org/W190245591","https://openalex.org/W1650778624","https://openalex.org/W2545385022","https://openalex.org/W2022549222","https://openalex.org/W2082944690"],"abstract_inverted_index":{"A":[0],"0.9":[1],"V":[2,5,72],"to":[3,24],"5":[4],"(0.9/1.2/1.8/2.5/3.3/5":[6],"V)":[7],"mixed-voltage":[8],"I/O":[9,35],"buffer":[10,36],"with":[11,73],"NMOS":[12],"clamping":[13],"technique":[14],"is":[15,53,65],"proposed.":[16],"By":[17],"using":[18],"a":[19,39,57],"dynamic":[20],"gate":[21,27],"bias":[22],"generator":[23],"provide":[25],"appropriate":[26],"drive":[28],"voltages":[29],"for":[30,70],"the":[31,34,50],"output":[32],"stage,":[33],"can":[37],"transmit":[38],"sub-3":[40],"\u00d7":[41],"VDD":[42],"voltage-level":[43],"signal":[44],"without":[45],"gate-oxide":[46],"overstress":[47],"hazard.":[48],"Besides,":[49],"leakage":[51],"current":[52],"eliminated":[54],"by":[55],"adopting":[56],"floating":[58],"N-well":[59],"circuit.":[60],"The":[61],"maximum":[62],"data":[63],"rate":[64],"measured":[66],"at":[67],"66":[68],"MHz":[69],"5/3.3/2.5/1.8/1.2/0.9":[71],"an":[74],"equivalent":[75],"probe":[76],"capacitive":[77],"load":[78],"of":[79],"10":[80],"pF.":[81]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2016,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}