{"id":"https://openalex.org/W2135190827","doi":"https://doi.org/10.1109/tcsii.2009.2019164","title":"Area-Efficient ESD-Transient Detection Circuit With Smaller Capacitance for On-Chip Power-Rail ESD Protection in CMOS ICs","display_name":"Area-Efficient ESD-Transient Detection Circuit With Smaller Capacitance for On-Chip Power-Rail ESD Protection in CMOS ICs","publication_year":2009,"publication_date":"2009-04-28","ids":{"openalex":"https://openalex.org/W2135190827","doi":"https://doi.org/10.1109/tcsii.2009.2019164","mag":"2135190827"},"language":"en","primary_location":{"id":"doi:10.1109/tcsii.2009.2019164","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2009.2019164","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5003335165","display_name":"Shih\u2010Hung Chen","orcid":"https://orcid.org/0000-0002-6481-2951"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]},{"id":"https://openalex.org/I4210148468","display_name":"Industrial Technology Research Institute","ror":"https://ror.org/05szzwt63","country_code":"TW","type":"nonprofit","lineage":["https://openalex.org/I4210148468"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Shih-Hung Chen","raw_affiliation_strings":["Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","SoC Technology Center, Industrial Technology and Research Institute, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"SoC Technology Center, Industrial Technology and Research Institute, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210148468"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5006983052","display_name":"Ming-Dou Ker","orcid":null},"institutions":[{"id":"https://openalex.org/I98298690","display_name":"I-Shou University","ror":"https://ror.org/04d7e4m76","country_code":"TW","type":"education","lineage":["https://openalex.org/I98298690"]},{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ming-Dou Ker","raw_affiliation_strings":["Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan","Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan"],"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I98298690"]},{"raw_affiliation_string":"Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5003335165"],"corresponding_institution_ids":["https://openalex.org/I148366613","https://openalex.org/I4210148468"],"apc_list":null,"apc_paid":null,"fwci":1.7945,"has_fulltext":false,"cited_by_count":29,"citation_normalized_percentile":{"value":0.86179454,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"56","issue":"5","first_page":"359","last_page":"363"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.8794506192207336},{"id":"https://openalex.org/keywords/clamper","display_name":"Clamper","score":0.7498305439949036},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7035056948661804},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.660578727722168},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.585536539554596},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5573557615280151},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5488166213035583},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.4826824963092804},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.4408246874809265},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.43035566806793213},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4059803783893585},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.38334187865257263},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3367507755756378},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3215715289115906},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.22141629457473755},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08478391170501709}],"concepts":[{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.8794506192207336},{"id":"https://openalex.org/C64881904","wikidata":"https://www.wikidata.org/wiki/Q825778","display_name":"Clamper","level":3,"score":0.7498305439949036},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7035056948661804},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.660578727722168},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.585536539554596},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5573557615280151},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5488166213035583},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.4826824963092804},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.4408246874809265},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.43035566806793213},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4059803783893585},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.38334187865257263},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3367507755756378},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3215715289115906},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.22141629457473755},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08478391170501709},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsii.2009.2019164","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsii.2009.2019164","pdf_url":null,"source":{"id":"https://openalex.org/S93916849","display_name":"IEEE Transactions on Circuits & Systems II Express Briefs","issn_l":"1549-7747","issn":["1549-7747","1558-3791"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems II: Express Briefs","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7099999785423279,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1527488180","https://openalex.org/W1529542507","https://openalex.org/W1547544164","https://openalex.org/W1576337139","https://openalex.org/W1966291942","https://openalex.org/W2031892903","https://openalex.org/W2102866901","https://openalex.org/W2109641950","https://openalex.org/W2113526104","https://openalex.org/W2114646874","https://openalex.org/W2124399691","https://openalex.org/W2127633065","https://openalex.org/W2135576354","https://openalex.org/W2138659665","https://openalex.org/W2166986753","https://openalex.org/W2167017502","https://openalex.org/W3143899571","https://openalex.org/W6631707745"],"related_works":["https://openalex.org/W2992364380","https://openalex.org/W3038876531","https://openalex.org/W2401021868","https://openalex.org/W2150404448","https://openalex.org/W2058545256","https://openalex.org/W2394034449","https://openalex.org/W2904654231","https://openalex.org/W2999380399","https://openalex.org/W4210807885","https://openalex.org/W1997467417"],"abstract_inverted_index":{"The":[0],"RC-based":[1],"power-rail":[2,52,80],"electrostatic-discharge":[3],"(ESD)":[4],"clamp":[5,18,54,82],"circuit":[6,60,83,90],"with":[7,62,84],"big":[8],"field-effect":[9],"transistor":[10,22],"(BigFET)":[11],"layout":[12,45],"style":[13],"in":[14,36,50,70],"the":[15,28,43,48,51,76,79,85,116],"main":[16],"ESD":[17,29,53,81,99,102],"n-channel":[19],"metal-oxide-semiconductor":[20],"(NMOS)":[21],"was":[23],"widely":[24],"used":[25],"to":[26],"enhance":[27],"robustness":[30,100],"of":[31,47],"a":[32,56,71,93],"CMOS":[33,38,73],"IC":[34],"fabricated":[35],"advanced":[37],"processes.":[39],"To":[40],"further":[41],"reduce":[42],"occupied":[44],"area":[46],"RC":[49],"circuit,":[55],"new":[57,86],"ESD-transient":[58,88],"detection":[59,89],"realized":[61],"smaller":[63],"capacitance":[64],"has":[65],"been":[66],"proposed":[67,87],"and":[68,97,112],"verified":[69],"0.13-mum":[72],"process.":[74],"From":[75],"experimental":[77],"results,":[78],"can":[91],"achieve":[92],"long-enough":[94],"turn-on":[95],"duration":[96],"higher":[98],"under":[101,115],"stress":[103],"condition,":[104],"as":[105,107],"well":[106],"better":[108],"immunity":[109],"against":[110],"mis-trigger":[111],"latch-on":[113],"event":[114],"fast-power-on":[117],"condition.":[118]},"counts_by_year":[{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":5},{"year":2012,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}