{"id":"https://openalex.org/W7115699093","doi":"https://doi.org/10.1109/tcsi.2025.3636832","title":"A Separated Pre-Charge Sense Amplifier With Fast Sensing, Low Power, Small Area, and High Reliability for Hybrid MTJ/CMOS Logic Circuits","display_name":"A Separated Pre-Charge Sense Amplifier With Fast Sensing, Low Power, Small Area, and High Reliability for Hybrid MTJ/CMOS Logic Circuits","publication_year":2025,"publication_date":"2025-12-17","ids":{"openalex":"https://openalex.org/W7115699093","doi":"https://doi.org/10.1109/tcsi.2025.3636832"},"language":null,"primary_location":{"id":"doi:10.1109/tcsi.2025.3636832","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2025.3636832","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Taegun Yim","orcid":"https://orcid.org/0000-0002-1732-842X"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taegun Yim","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-1732-842X","affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"last","author":{"id":null,"display_name":"Hongil Yoon","orcid":"https://orcid.org/0009-0000-0652-1200"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hongil Yoon","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0009-0000-0652-1200","affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I193775966"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.48849849,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"73","issue":"6","first_page":"3953","last_page":"3961"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12692","display_name":"Magnetic Field Sensors Techniques","score":0.9297999739646912,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12692","display_name":"Magnetic Field Sensors Techniques","score":0.9297999739646912,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.03269999846816063,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.008100000210106373,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.676800012588501},{"id":"https://openalex.org/keywords/pass-transistor-logic","display_name":"Pass transistor logic","score":0.6384999752044678},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6194999814033508},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6108999848365784},{"id":"https://openalex.org/keywords/sense-amplifier","display_name":"Sense amplifier","score":0.61080002784729},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.6040999889373779},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.5629000067710876},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5537999868392944},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5483999848365784},{"id":"https://openalex.org/keywords/integrated-injection-logic","display_name":"Integrated injection logic","score":0.4327000081539154}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.676800012588501},{"id":"https://openalex.org/C198521697","wikidata":"https://www.wikidata.org/wiki/Q7142438","display_name":"Pass transistor logic","level":4,"score":0.6384999752044678},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.6383000016212463},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6194999814033508},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6108999848365784},{"id":"https://openalex.org/C32666082","wikidata":"https://www.wikidata.org/wiki/Q7450979","display_name":"Sense amplifier","level":3,"score":0.61080002784729},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.6040999889373779},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.5629000067710876},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5537999868392944},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5483999848365784},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5113999843597412},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44830000400543213},{"id":"https://openalex.org/C159903706","wikidata":"https://www.wikidata.org/wiki/Q173574","display_name":"Integrated injection logic","level":5,"score":0.4327000081539154},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4325000047683716},{"id":"https://openalex.org/C2777125575","wikidata":"https://www.wikidata.org/wiki/Q14088448","display_name":"Cadence","level":2,"score":0.41449999809265137},{"id":"https://openalex.org/C162454741","wikidata":"https://www.wikidata.org/wiki/Q173359","display_name":"Logic family","level":4,"score":0.35530000925064087},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3476000130176544},{"id":"https://openalex.org/C2776391166","wikidata":"https://www.wikidata.org/wiki/Q7236873","display_name":"Power\u2013delay product","level":4,"score":0.34599998593330383},{"id":"https://openalex.org/C10418432","wikidata":"https://www.wikidata.org/wiki/Q560370","display_name":"AND gate","level":3,"score":0.3441999852657318},{"id":"https://openalex.org/C143141573","wikidata":"https://www.wikidata.org/wiki/Q7450971","display_name":"Sense (electronics)","level":2,"score":0.3327000141143799},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.32269999384880066},{"id":"https://openalex.org/C90806461","wikidata":"https://www.wikidata.org/wiki/Q1144416","display_name":"Propagation delay","level":2,"score":0.30730000138282776},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.30059999227523804},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.29750001430511475},{"id":"https://openalex.org/C61818909","wikidata":"https://www.wikidata.org/wiki/Q1987617","display_name":"Pull-up resistor","level":5,"score":0.28630000352859497},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.2858999967575073},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.2727000117301941},{"id":"https://openalex.org/C190560348","wikidata":"https://www.wikidata.org/wiki/Q3245116","display_name":"Circuit design","level":2,"score":0.2694000005722046},{"id":"https://openalex.org/C180405849","wikidata":"https://www.wikidata.org/wiki/Q173464","display_name":"Resistor\u2013transistor logic","level":5,"score":0.2578999996185303},{"id":"https://openalex.org/C87606752","wikidata":"https://www.wikidata.org/wiki/Q4682637","display_name":"Adiabatic circuit","level":5,"score":0.25369998812675476},{"id":"https://openalex.org/C58140894","wikidata":"https://www.wikidata.org/wiki/Q560398","display_name":"OR gate","level":4,"score":0.25360000133514404},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.25189998745918274},{"id":"https://openalex.org/C130126468","wikidata":"https://www.wikidata.org/wiki/Q4652943","display_name":"AND-OR-Invert","level":5,"score":0.2515000104904175}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2025.3636832","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2025.3636832","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.817804753780365,"display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G3233482051","display_name":null,"funder_award_id":"1415185125","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"},{"id":"https://openalex.org/G5966224299","display_name":null,"funder_award_id":"IO251222-14910-01","funder_id":"https://openalex.org/F4320332195","funder_display_name":"Samsung"},{"id":"https://openalex.org/G6343090784","display_name":null,"funder_award_id":"IO251222-14910-01","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"}],"funders":[{"id":"https://openalex.org/F4320321681","display_name":"Ministry of Trade, Industry and Energy","ror":"https://ror.org/008nkqk13"},{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":[],"abstract_inverted_index":{"The":[0,83],"use":[1],"of":[2,16,24,120],"logic":[3,61,226],"circuits":[4,197],"combined":[5],"with":[6,151],"emerging":[7,25],"devices":[8],"has":[9],"been":[10],"studied":[11],"to":[12,36,126,169],"overcome":[13],"the":[14,90,102,114,136,152,171,186,190,195],"limitations":[15],"complementary":[17],"metal-oxide-semiconductor":[18],"(CMOS)":[19],"transistors.":[20,142],"Among":[21],"a":[22,32,70,118,159,220],"variety":[23],"devices,":[26],"magnetic":[27],"tunnel":[28],"junction":[29],"(MTJ)":[30],"is":[31],"promising":[33],"candidate":[34],"owing":[35],"its":[37,124],"non-volatility,":[38],"high":[39],"endurance,":[40],"and":[41,49,54,81,92,148,158,177,214],"CMOS":[42,50,154],"compatibility.":[43],"However,":[44],"process":[45],"variations":[46],"in":[47,58,223],"MTJs":[48],"transistors":[51,100],"hinder":[52],"reliable":[53],"precise":[55],"resistance-to-voltage":[56],"conversion":[57],"hybrid":[59,224],"MTJ/CMOS":[60,225],"circuits.":[62,228],"To":[63],"address":[64],"this":[65,67],"issue,":[66],"paper":[68],"proposes":[69],"novel":[71],"separated":[72],"pre-charge":[73],"sense":[74],"amplifier":[75],"that":[76,112,185],"achieves":[77,189],"fast-sensing,":[78],"low-power,":[79],"small-area,":[80],"high-reliability.":[82],"proposed":[84,187],"circuit":[85,188],"eliminates":[86],"intermediate":[87],"inverters":[88],"between":[89,117],"discharge":[91],"evaluation":[93],"stages.":[94],"It":[95,122],"incorporates":[96],"P-channel":[97],"MOS":[98],"(PMOS)":[99],"within":[101],"inverter":[103],"latch,":[104],"whose":[105],"gates":[106],"are":[107,144,167],"directly":[108],"biased":[109],"by":[110],"voltages":[111],"reflect":[113],"resistance":[115],"difference":[116],"pair":[119],"MTJs.":[121],"minimizes":[123],"nodes":[125],"be":[127],"charged":[128],"or":[129],"discharged":[130],"during":[131],"operation.":[132],"Furthermore,":[133],"it":[134],"reduces":[135],"total":[137],"transistor":[138],"count,":[139],"including":[140],"clock-driven":[141],"Simulations":[143],"performed":[145],"using":[146],"Cadence":[147],"HSPICE":[149],"tools":[150],"NCSU":[153],"45nm":[155],"design":[156],"kit":[157],"physics-based":[160],"MTJ":[161],"SPICE":[162],"model.":[163],"Monte":[164],"Carlo":[165],"simulations":[166],"conducted":[168],"check":[170],"circuit\u2019s":[172],"reliability":[173],"under":[174],"process,":[175],"voltage,":[176],"temperature":[178],"(PVT)":[179],"variations.":[180],"Post-layout":[181],"simulation":[182],"results":[183],"show":[184],"fastest":[191],"sensing":[192,216],"delay":[193],"among":[194],"compared":[196],"except":[198],"for":[199,219],"Separated":[200],"Pre-Charge":[201],"Sense":[202],"Amplifier":[203],"(SPCSA),":[204],"lowest":[205,208,215],"power":[206],"consumption,":[207],"power-delay":[209],"product,":[210],"smallest":[211],"area":[212],"overhead,":[213],"error":[217],"rate":[218],"viable":[221],"usage":[222],"memory":[227]},"counts_by_year":[],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-12-17T00:00:00"}