{"id":"https://openalex.org/W4415178940","doi":"https://doi.org/10.1109/tcsi.2025.3619952","title":"Broadband GaAs HBT Doherty Power Amplifier Using Lumped Compensation Network and Input Phase Correction for 5G Applications","display_name":"Broadband GaAs HBT Doherty Power Amplifier Using Lumped Compensation Network and Input Phase Correction for 5G Applications","publication_year":2025,"publication_date":"2025-10-14","ids":{"openalex":"https://openalex.org/W4415178940","doi":"https://doi.org/10.1109/tcsi.2025.3619952"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2025.3619952","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2025.3619952","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5079394939","display_name":"Ruibin Gao","orcid":"https://orcid.org/0000-0001-7470-4359"},"institutions":[{"id":"https://openalex.org/I158842170","display_name":"Chongqing University","ror":"https://ror.org/023rhb549","country_code":"CN","type":"education","lineage":["https://openalex.org/I158842170"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ruibin Gao","raw_affiliation_strings":["School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China"],"raw_orcid":"https://orcid.org/0000-0001-7470-4359","affiliations":[{"raw_affiliation_string":"School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China","institution_ids":["https://openalex.org/I158842170"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071033259","display_name":"Shuang Liu","orcid":"https://orcid.org/0000-0001-8384-2809"},"institutions":[{"id":"https://openalex.org/I158842170","display_name":"Chongqing University","ror":"https://ror.org/023rhb549","country_code":"CN","type":"education","lineage":["https://openalex.org/I158842170"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shuang Liu","raw_affiliation_strings":["School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China"],"raw_orcid":"https://orcid.org/0000-0001-8384-2809","affiliations":[{"raw_affiliation_string":"School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China","institution_ids":["https://openalex.org/I158842170"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045392988","display_name":"Weimin Shi","orcid":"https://orcid.org/0000-0002-8744-395X"},"institutions":[{"id":"https://openalex.org/I158842170","display_name":"Chongqing University","ror":"https://ror.org/023rhb549","country_code":"CN","type":"education","lineage":["https://openalex.org/I158842170"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weimin Shi","raw_affiliation_strings":["School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China"],"raw_orcid":"https://orcid.org/0000-0002-8744-395X","affiliations":[{"raw_affiliation_string":"School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China","institution_ids":["https://openalex.org/I158842170"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007891076","display_name":"Zhijiang Dai","orcid":"https://orcid.org/0000-0003-4914-1464"},"institutions":[{"id":"https://openalex.org/I158842170","display_name":"Chongqing University","ror":"https://ror.org/023rhb549","country_code":"CN","type":"education","lineage":["https://openalex.org/I158842170"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhijiang Dai","raw_affiliation_strings":["School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China"],"raw_orcid":"https://orcid.org/0000-0003-4914-1464","affiliations":[{"raw_affiliation_string":"School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China","institution_ids":["https://openalex.org/I158842170"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100335538","display_name":"Mingyu Li","orcid":"https://orcid.org/0000-0002-9893-3284"},"institutions":[{"id":"https://openalex.org/I158842170","display_name":"Chongqing University","ror":"https://ror.org/023rhb549","country_code":"CN","type":"education","lineage":["https://openalex.org/I158842170"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Mingyu Li","raw_affiliation_strings":["School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China"],"raw_orcid":"https://orcid.org/0000-0002-9893-3284","affiliations":[{"raw_affiliation_string":"School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China","institution_ids":["https://openalex.org/I158842170"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061263806","display_name":"Shichang Chen","orcid":"https://orcid.org/0000-0003-1628-5429"},"institutions":[{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shichang Chen","raw_affiliation_strings":["Shaoxing Integrated Circuit Institute, Hangzhou Dianzi University, Hangzhou, China"],"raw_orcid":"https://orcid.org/0000-0003-1628-5429","affiliations":[{"raw_affiliation_string":"Shaoxing Integrated Circuit Institute, Hangzhou Dianzi University, Hangzhou, China","institution_ids":["https://openalex.org/I50760025"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5034181091","display_name":"Jingzhou Pang","orcid":"https://orcid.org/0000-0003-3781-3219"},"institutions":[{"id":"https://openalex.org/I158842170","display_name":"Chongqing University","ror":"https://ror.org/023rhb549","country_code":"CN","type":"education","lineage":["https://openalex.org/I158842170"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jingzhou Pang","raw_affiliation_strings":["School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China"],"raw_orcid":"https://orcid.org/0000-0003-3781-3219","affiliations":[{"raw_affiliation_string":"School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China","institution_ids":["https://openalex.org/I158842170"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.24151309,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"73","issue":"4","first_page":"2510","last_page":"2521"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9944000244140625,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11249","display_name":"Wireless Power Transfer Systems","score":0.9681000113487244,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/predistortion","display_name":"Predistortion","score":0.7081999778747559},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6974999904632568},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.6322000026702881},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.5073000192642212},{"id":"https://openalex.org/keywords/dbc","display_name":"dBc","score":0.4733999967575073},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.4440000057220459},{"id":"https://openalex.org/keywords/wideband","display_name":"Wideband","score":0.4300000071525574},{"id":"https://openalex.org/keywords/input-impedance","display_name":"Input impedance","score":0.4124000072479248},{"id":"https://openalex.org/keywords/broadband","display_name":"Broadband","score":0.40700000524520874}],"concepts":[{"id":"https://openalex.org/C2778587875","wikidata":"https://www.wikidata.org/wiki/Q7239686","display_name":"Predistortion","level":4,"score":0.7081999778747559},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6974999904632568},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.6322000026702881},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5472999811172485},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.5073000192642212},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.49050000309944153},{"id":"https://openalex.org/C193523891","wikidata":"https://www.wikidata.org/wiki/Q1771950","display_name":"dBc","level":3,"score":0.4733999967575073},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.4440000057220459},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4388999938964844},{"id":"https://openalex.org/C2780202535","wikidata":"https://www.wikidata.org/wiki/Q4524457","display_name":"Wideband","level":2,"score":0.4300000071525574},{"id":"https://openalex.org/C26262908","wikidata":"https://www.wikidata.org/wiki/Q1307489","display_name":"Input impedance","level":3,"score":0.4124000072479248},{"id":"https://openalex.org/C509933004","wikidata":"https://www.wikidata.org/wiki/Q194163","display_name":"Broadband","level":2,"score":0.40700000524520874},{"id":"https://openalex.org/C2776191232","wikidata":"https://www.wikidata.org/wiki/Q4683143","display_name":"Adjacent channel power ratio","level":5,"score":0.37869998812675476},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.3450999855995178},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.33309999108314514},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3312999904155731},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3100000023841858},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.30720001459121704},{"id":"https://openalex.org/C2780023022","wikidata":"https://www.wikidata.org/wiki/Q1338171","display_name":"Compensation (psychology)","level":2,"score":0.2994999885559082},{"id":"https://openalex.org/C2776908912","wikidata":"https://www.wikidata.org/wiki/Q16001834","display_name":"Adjacent channel","level":4,"score":0.2865000069141388},{"id":"https://openalex.org/C612350","wikidata":"https://www.wikidata.org/wiki/Q1761108","display_name":"Impedance matching","level":3,"score":0.2847000062465668},{"id":"https://openalex.org/C54767332","wikidata":"https://www.wikidata.org/wiki/Q1751572","display_name":"Phase response","level":3,"score":0.2768000066280365},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.27379998564720154},{"id":"https://openalex.org/C58112919","wikidata":"https://www.wikidata.org/wiki/Q631203","display_name":"Output impedance","level":3,"score":0.2644999921321869},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.2639000117778778},{"id":"https://openalex.org/C191907038","wikidata":"https://www.wikidata.org/wiki/Q7236476","display_name":"Power bandwidth","level":5,"score":0.25760000944137573},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.25099998712539673},{"id":"https://openalex.org/C132794960","wikidata":"https://www.wikidata.org/wiki/Q27304","display_name":"Chirp","level":3,"score":0.2500999867916107}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2025.3619952","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2025.3619952","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G65686419","display_name":null,"funder_award_id":"62371077","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7864363164","display_name":null,"funder_award_id":"62171065","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G8332342519","display_name":null,"funder_award_id":"62201100","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":[],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,18,48,81,96,116,131,139,146,159,166],"broadband":[4,110],"Gallium":[5],"Arsenide":[6],"(GaAs)":[7],"heterojunction":[8],"bipolar":[9],"transistor":[10],"(HBT)":[11],"Doherty":[12],"power":[13,43,134,190],"amplifier":[14],"(DPA)":[15],"that":[16],"employs":[17],"lumped":[19],"compensation":[20],"network":[21,76],"(LCN)":[22],"and":[23,69,88,108,125,186],"input":[24,64,73],"phase":[25,65,74,83],"correction":[26,75],"technique":[27],"for":[28,204],"5G":[29,123,206],"applications.":[30,208],"A":[31],"LCN":[32,60],"is":[33,77,93],"utilized":[34],"with":[35,115,138,165,172],"an":[36,70,179,187],"integrated":[37],"impedance":[38],"inverter":[39],"to":[40,79,184],"enhance":[41],"output":[42,133],"back-off":[44],"(OBO)":[45],"efficiency":[46,142],"across":[47],"wide":[49],"frequency":[50],"range.":[51],"To":[52],"mitigate":[53],"the":[54,59,86,122,156,176],"overdrive":[55],"issue":[56],"caused":[57],"by":[58],"under":[61],"saturation,":[62],"different":[63],"strategies":[66],"are":[67],"analyzed,":[68],"on-chip":[71],"coupler-based":[72],"introduced":[78],"maintain":[80],"constant":[82],"difference":[84],"between":[85],"carrier":[87],"peaking":[89],"paths.":[90],"The":[91],"DPA":[92,157,177],"implemented":[94],"using":[95],"2":[97],"<inline-formula":[98],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[99],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[100],"<tex-math":[101],"notation=\"LaTeX\">$\\mu":[102],"$</tex-math>":[103],"</inline-formula>m":[104],"GaAs":[105],"HBT":[106],"process":[107],"achieves":[109,178],"operation":[111],"over":[112],"3.1-4.3":[113],"GHz":[114],"fractional":[117],"bandwidth":[118,169],"exceeding":[119],"32%,":[120],"covering":[121],"n77":[124],"n78":[126],"bands.":[127],"Measurement":[128],"results":[129],"demonstrate":[130],"saturated":[132,140],"of":[135,144,149,161,182],"32.73-33.77":[136],"dBm":[137],"power-added":[141],"(PAE)":[143],"39.54%-46.51%,":[145],"small-signal":[147],"gain":[148],"22.19-25.30":[150],"dB.":[151],"At":[152],"6":[153],"dB":[154,174],"OBO,":[155],"maintains":[158],"PAE":[160,181],"30.84%-34.95%.":[162],"When":[163],"tested":[164],"100":[167],"MHz":[168],"64-QAM":[170],"signal":[171],"5.6":[173],"PAPR,":[175],"average":[180],"up":[183],"34.3%":[185],"adjacent":[188],"channel":[189],"ratio":[191],"(ACPR)":[192],"better":[193],"than":[194],"-45.2":[195],"dBc":[196],"after":[197],"digital":[198],"predistortion":[199],"(DPD),":[200],"demonstrating":[201],"its":[202],"potential":[203],"wideband":[205],"terminal":[207]},"counts_by_year":[],"updated_date":"2026-03-31T06:02:25.137627","created_date":"2025-10-15T00:00:00"}