{"id":"https://openalex.org/W4414110530","doi":"https://doi.org/10.1109/tcsi.2025.3606746","title":"Reliability-Enhanced Offset-Canceling Current-Sampling Sense Amplifier for 2T-2MTJ MRAM PUF","display_name":"Reliability-Enhanced Offset-Canceling Current-Sampling Sense Amplifier for 2T-2MTJ MRAM PUF","publication_year":2025,"publication_date":"2025-09-10","ids":{"openalex":"https://openalex.org/W4414110530","doi":"https://doi.org/10.1109/tcsi.2025.3606746"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2025.3606746","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2025.3606746","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Mingu Han","orcid":null},"institutions":[{"id":"https://openalex.org/I146429904","display_name":"Incheon National University","ror":"https://ror.org/02xf7p935","country_code":"KR","type":"education","lineage":["https://openalex.org/I146429904"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Mingu Han","raw_affiliation_strings":["Department of Electronics Engineering, Incheon National University, Incheon, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Incheon National University, Incheon, South Korea","institution_ids":["https://openalex.org/I146429904"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084628168","display_name":"Jaehwan Kim","orcid":"https://orcid.org/0009-0007-3221-1493"},"institutions":[{"id":"https://openalex.org/I146429904","display_name":"Incheon National University","ror":"https://ror.org/02xf7p935","country_code":"KR","type":"education","lineage":["https://openalex.org/I146429904"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaehwan Kim","raw_affiliation_strings":["Department of Electronics Engineering, Incheon National University, Incheon, South Korea"],"raw_orcid":"https://orcid.org/0009-0007-3221-1493","affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Incheon National University, Incheon, South Korea","institution_ids":["https://openalex.org/I146429904"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056300251","display_name":"Bayartulga Ishdorj","orcid":"https://orcid.org/0009-0002-4519-4788"},"institutions":[{"id":"https://openalex.org/I146429904","display_name":"Incheon National University","ror":"https://ror.org/02xf7p935","country_code":"KR","type":"education","lineage":["https://openalex.org/I146429904"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Bayartulga Ishdorj","raw_affiliation_strings":["Department of Electronics Engineering, Incheon National University, Incheon, South Korea"],"raw_orcid":"https://orcid.org/0009-0002-4519-4788","affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Incheon National University, Incheon, South Korea","institution_ids":["https://openalex.org/I146429904"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101574195","display_name":"Jae Won Jang","orcid":"https://orcid.org/0009-0005-4482-2545"},"institutions":[{"id":"https://openalex.org/I146429904","display_name":"Incheon National University","ror":"https://ror.org/02xf7p935","country_code":"KR","type":"education","lineage":["https://openalex.org/I146429904"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaeyong Jang","raw_affiliation_strings":["Department of Electronics Engineering, Incheon National University, Incheon, South Korea"],"raw_orcid":"https://orcid.org/0009-0005-4482-2545","affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Incheon National University, Incheon, South Korea","institution_ids":["https://openalex.org/I146429904"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089907396","display_name":"Taehui Na","orcid":"https://orcid.org/0000-0001-8823-0625"},"institutions":[{"id":"https://openalex.org/I146429904","display_name":"Incheon National University","ror":"https://ror.org/02xf7p935","country_code":"KR","type":"education","lineage":["https://openalex.org/I146429904"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taehui Na","raw_affiliation_strings":["Department of Electronics Engineering, Incheon National University, Incheon, South Korea"],"raw_orcid":"https://orcid.org/0000-0001-8823-0625","affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Incheon National University, Incheon, South Korea","institution_ids":["https://openalex.org/I146429904"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I146429904"],"apc_list":null,"apc_paid":null,"fwci":0.9253,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.77250683,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":97,"max":98},"biblio":{"volume":"73","issue":"3","first_page":"1669","last_page":"1682"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.996999979019165,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9968000054359436,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/trimming","display_name":"Trimming","score":0.8296999931335449},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.6021999716758728},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5604000091552734},{"id":"https://openalex.org/keywords/input-offset-voltage","display_name":"Input offset voltage","score":0.47369998693466187},{"id":"https://openalex.org/keywords/sense-amplifier","display_name":"Sense amplifier","score":0.45179998874664307},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.42719998955726624},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.42410001158714294},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.3978999853134155},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.3937000036239624}],"concepts":[{"id":"https://openalex.org/C56951928","wikidata":"https://www.wikidata.org/wiki/Q3539213","display_name":"Trimming","level":2,"score":0.8296999931335449},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.6021999716758728},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5604000091552734},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.551800012588501},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4779999852180481},{"id":"https://openalex.org/C63651839","wikidata":"https://www.wikidata.org/wiki/Q478566","display_name":"Input offset voltage","level":5,"score":0.47369998693466187},{"id":"https://openalex.org/C32666082","wikidata":"https://www.wikidata.org/wiki/Q7450979","display_name":"Sense amplifier","level":3,"score":0.45179998874664307},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.42719998955726624},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.42410001158714294},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.3978999853134155},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.3937000036239624},{"id":"https://openalex.org/C175291020","wikidata":"https://www.wikidata.org/wiki/Q1156822","display_name":"Offset (computer science)","level":2,"score":0.3928000032901764},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.37790000438690186},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.35589998960494995},{"id":"https://openalex.org/C64881904","wikidata":"https://www.wikidata.org/wiki/Q825778","display_name":"Clamper","level":3,"score":0.3416000008583069},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.3391000032424927},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.3296999931335449},{"id":"https://openalex.org/C143141573","wikidata":"https://www.wikidata.org/wiki/Q7450971","display_name":"Sense (electronics)","level":2,"score":0.31610000133514404},{"id":"https://openalex.org/C11722477","wikidata":"https://www.wikidata.org/wiki/Q1056298","display_name":"Differential amplifier","level":4,"score":0.311599999666214},{"id":"https://openalex.org/C108710744","wikidata":"https://www.wikidata.org/wiki/Q4134329","display_name":"Blanking","level":2,"score":0.30790001153945923},{"id":"https://openalex.org/C145366948","wikidata":"https://www.wikidata.org/wiki/Q178947","display_name":"Operational amplifier","level":4,"score":0.29019999504089355},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.27730000019073486},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.273499995470047},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.2734000086784363},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.2678999900817871},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.2506999969482422}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2025.3606746","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2025.3606746","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G1419170835","display_name":null,"funder_award_id":"RS-2023-00229028","funder_id":"https://openalex.org/F4320322105","funder_display_name":"Korea Institute of Science and Technology Information"},{"id":"https://openalex.org/G7262121843","display_name":null,"funder_award_id":"2E33551-25-048","funder_id":"https://openalex.org/F4320322105","funder_display_name":"Korea Institute of Science and Technology Information"}],"funders":[{"id":"https://openalex.org/F4320322105","display_name":"Korea Institute of Science and Technology Information","ror":"https://ror.org/01k4yrm29"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2077498413","https://openalex.org/W2949498821","https://openalex.org/W2544913214","https://openalex.org/W1979534490","https://openalex.org/W1587041331","https://openalex.org/W4410114659","https://openalex.org/W4363620554","https://openalex.org/W1568633384","https://openalex.org/W2942378084"],"abstract_inverted_index":{"In":[0,114],"this":[1],"paper,":[2],"we":[3],"propose":[4],"a":[5,14,43,64,85],"reliability-enhanced":[6],"offset-canceling":[7],"current":[8,76],"sampling":[9],"sense":[10],"amplifier":[11],"(REOCCS-SA)":[12],"with":[13],"clamp":[15,59,71],"voltage":[16,45,60],"trimming":[17,61,156],"technique":[18,62],"to":[19,48,67,77,111,117],"improve":[20],"uniformity":[21,54,100],"and":[22,55,103,157,172,180],"uniqueness":[23],"in":[24],"spin-transfer-torque":[25],"magnetic":[26],"random-access":[27],"memory":[28],"(STT-MRAM)-based":[29],"physically":[30],"unclonable":[31],"function":[32],"(PUF).":[33],"REOCCS-SA":[34,94,166],"retains":[35],"the":[36,39,58,70,74,92,96,112,122,127,133,158,162],"structure":[37],"of":[38,99,130],"OCCS-SA":[40],"while":[41],"incorporating":[42],"preliminary":[44],"amplification":[46],"phase":[47],"enhance":[49],"offset":[50],"tolerance,":[51],"thereby":[52],"improving":[53],"uniqueness.":[56],"Additionally,":[57],"utilizes":[63],"resistor":[65],"ladder":[66],"precisely":[68],"adjust":[69],"voltage,":[72],"optimizing":[73],"reference":[75],"achieve":[78],"ideal":[79],"uniformity.":[80],"HSPICE":[81],"simulations":[82],"based":[83],"on":[84],"28":[86],"nm":[87],"technology":[88],"model":[89],"show":[90],"that":[91],"proposed":[93,120],"reduces":[95],"standard":[97],"deviation":[98],"by":[101,108,144],"75%":[102],"improves":[104],"inter-Hamming":[105],"distance":[106],"(inter-HD)":[107],"50%":[109],"compared":[110,116],"OCCS-SA.":[113],"addition,":[115],"other":[118],"circuits":[119],"within":[121],"past":[123],"decade,":[124],"it":[125],"achieves":[126],"lowest":[128],"figure":[129],"merit,":[131],"demonstrating":[132],"highest":[134],"overall":[135,178],"efficiency":[136],"when":[137],"operating":[138],"as":[139],"an":[140],"STT-MRAM-based":[141],"PUF.":[142],"Furthermore,":[143],"applying":[145],"the<italic":[146],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[147,150],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">V</i>":[148],"<inline-formula":[149],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[151],"<tex-math":[152],"notation=\"LaTeX\">${}_{\\mathbf":[153],"{CMP\\_R}}$</tex-math>":[154],"</inline-formula>":[155],"automatic":[159],"write-back":[160],"technique,":[161],"PUF":[163],"system":[164],"using":[165],"exhibits":[167],"49.95%":[168],"uniformity,":[169],"50.83%":[170],"inter-HD,":[171],"0%":[173],"intra-Hamming":[174],"distance,":[175],"confirming":[176],"its":[177],"robustness":[179],"stability.":[181]},"counts_by_year":[{"year":2026,"cited_by_count":2}],"updated_date":"2026-02-27T14:28:36.762950","created_date":"2025-10-10T00:00:00"}