{"id":"https://openalex.org/W4365790243","doi":"https://doi.org/10.1109/tcsi.2023.3264693","title":"Offset-Canceling Current-Latched Sense Amplifier With Slow Rise Time Control and Reference Voltage Biasing Techniques","display_name":"Offset-Canceling Current-Latched Sense Amplifier With Slow Rise Time Control and Reference Voltage Biasing Techniques","publication_year":2023,"publication_date":"2023-04-13","ids":{"openalex":"https://openalex.org/W4365790243","doi":"https://doi.org/10.1109/tcsi.2023.3264693"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2023.3264693","is_oa":true,"landing_page_url":"https://doi.org/10.1109/tcsi.2023.3264693","pdf_url":"https://ieeexplore.ieee.org/ielx7/8919/4358591/10102270.pdf","source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://ieeexplore.ieee.org/ielx7/8919/4358591/10102270.pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5056300251","display_name":"Bayartulga Ishdorj","orcid":"https://orcid.org/0009-0002-4519-4788"},"institutions":[{"id":"https://openalex.org/I146429904","display_name":"Incheon National University","ror":"https://ror.org/02xf7p935","country_code":"KR","type":"education","lineage":["https://openalex.org/I146429904"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Bayartulga Ishdorj","raw_affiliation_strings":["Department of Electronics Engineering, Incheon National University, Incheon, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Incheon National University, Incheon, South Korea","institution_ids":["https://openalex.org/I146429904"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100652833","display_name":"Doyeon Kim","orcid":"https://orcid.org/0000-0003-0812-3905"},"institutions":[{"id":"https://openalex.org/I146429904","display_name":"Incheon National University","ror":"https://ror.org/02xf7p935","country_code":"KR","type":"education","lineage":["https://openalex.org/I146429904"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Doyeon Kim","raw_affiliation_strings":["Department of Electronics Engineering, Incheon National University, Incheon, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Incheon National University, Incheon, South Korea","institution_ids":["https://openalex.org/I146429904"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058635973","display_name":"Seongmin Ahn","orcid":null},"institutions":[{"id":"https://openalex.org/I146429904","display_name":"Incheon National University","ror":"https://ror.org/02xf7p935","country_code":"KR","type":"education","lineage":["https://openalex.org/I146429904"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seongmin Ahn","raw_affiliation_strings":["Department of Electronics Engineering, Incheon National University, Incheon, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Incheon National University, Incheon, South Korea","institution_ids":["https://openalex.org/I146429904"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089907396","display_name":"Taehui Na","orcid":"https://orcid.org/0000-0001-8823-0625"},"institutions":[{"id":"https://openalex.org/I146429904","display_name":"Incheon National University","ror":"https://ror.org/02xf7p935","country_code":"KR","type":"education","lineage":["https://openalex.org/I146429904"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taehui Na","raw_affiliation_strings":["Department of Electronics Engineering, Incheon National University, Incheon, South Korea"],"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, Incheon National University, Incheon, South Korea","institution_ids":["https://openalex.org/I146429904"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5056300251"],"corresponding_institution_ids":["https://openalex.org/I146429904"],"apc_list":null,"apc_paid":null,"fwci":0.6465,"has_fulltext":true,"cited_by_count":5,"citation_normalized_percentile":{"value":0.67006612,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":"70","issue":"7","first_page":"2689","last_page":"2699"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/notation","display_name":"Notation","score":0.553024172782898},{"id":"https://openalex.org/keywords/offset","display_name":"Offset (computer science)","score":0.5004565715789795},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.45575398206710815},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.38928577303886414},{"id":"https://openalex.org/keywords/discrete-mathematics","display_name":"Discrete mathematics","score":0.32632723450660706},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2974121570587158},{"id":"https://openalex.org/keywords/arithmetic","display_name":"Arithmetic","score":0.2951222062110901},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.25332632660865784},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2060471773147583},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13539645075798035},{"id":"https://openalex.org/keywords/programming-language","display_name":"Programming language","score":0.13087397813796997}],"concepts":[{"id":"https://openalex.org/C45357846","wikidata":"https://www.wikidata.org/wiki/Q2001982","display_name":"Notation","level":2,"score":0.553024172782898},{"id":"https://openalex.org/C175291020","wikidata":"https://www.wikidata.org/wiki/Q1156822","display_name":"Offset (computer science)","level":2,"score":0.5004565715789795},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.45575398206710815},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.38928577303886414},{"id":"https://openalex.org/C118615104","wikidata":"https://www.wikidata.org/wiki/Q121416","display_name":"Discrete mathematics","level":1,"score":0.32632723450660706},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2974121570587158},{"id":"https://openalex.org/C94375191","wikidata":"https://www.wikidata.org/wiki/Q11205","display_name":"Arithmetic","level":1,"score":0.2951222062110901},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.25332632660865784},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2060471773147583},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13539645075798035},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.13087397813796997},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2023.3264693","is_oa":true,"landing_page_url":"https://doi.org/10.1109/tcsi.2023.3264693","pdf_url":"https://ieeexplore.ieee.org/ielx7/8919/4358591/10102270.pdf","source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1109/tcsi.2023.3264693","is_oa":true,"landing_page_url":"https://doi.org/10.1109/tcsi.2023.3264693","pdf_url":"https://ieeexplore.ieee.org/ielx7/8919/4358591/10102270.pdf","source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G1905581522","display_name":null,"funder_award_id":"2022M3F3A2A01073562","funder_id":"https://openalex.org/F4320320671","funder_display_name":"National Research Foundation"},{"id":"https://openalex.org/G7588070678","display_name":null,"funder_award_id":"2022M3I7A2079267","funder_id":"https://openalex.org/F4320322030","funder_display_name":"Ministry of Science, ICT and Future Planning"},{"id":"https://openalex.org/G7605257381","display_name":null,"funder_award_id":"2022M3F3A2A01073562","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G7685055460","display_name":null,"funder_award_id":"Grant","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G7778148544","display_name":null,"funder_award_id":"2022M3I7A2079267","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G8911344190","display_name":null,"funder_award_id":"2022M3F3A2A01073562","funder_id":"https://openalex.org/F4320322030","funder_display_name":"Ministry of Science, ICT and Future Planning"}],"funders":[{"id":"https://openalex.org/F4320320671","display_name":"National Research Foundation","ror":"https://ror.org/05s0g1g46"},{"id":"https://openalex.org/F4320322030","display_name":"Ministry of Science, ICT and Future Planning","ror":"https://ror.org/032e49973"},{"id":"https://openalex.org/F4320322202","display_name":"IC Design Education Center","ror":"https://ror.org/005v57z85"},{"id":"https://openalex.org/F4320328359","display_name":"Ministry of Science and ICT, South Korea","ror":"https://ror.org/01wpjm123"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4365790243.pdf","grobid_xml":"https://content.openalex.org/works/W4365790243.grobid-xml"},"referenced_works_count":32,"referenced_works":["https://openalex.org/W1630879657","https://openalex.org/W1752334773","https://openalex.org/W1906643356","https://openalex.org/W1968632892","https://openalex.org/W1982871476","https://openalex.org/W2028643888","https://openalex.org/W2046515116","https://openalex.org/W2074628056","https://openalex.org/W2101328080","https://openalex.org/W2112127942","https://openalex.org/W2114758430","https://openalex.org/W2115376510","https://openalex.org/W2128485160","https://openalex.org/W2139138351","https://openalex.org/W2140823559","https://openalex.org/W2150938923","https://openalex.org/W2165716336","https://openalex.org/W2168101540","https://openalex.org/W2168559772","https://openalex.org/W2281229150","https://openalex.org/W2345889297","https://openalex.org/W2582025695","https://openalex.org/W2700223188","https://openalex.org/W2787664620","https://openalex.org/W2920650667","https://openalex.org/W2963909880","https://openalex.org/W3082007433","https://openalex.org/W3109556898","https://openalex.org/W3135803291","https://openalex.org/W3168570952","https://openalex.org/W4312384871","https://openalex.org/W6675203327"],"related_works":["https://openalex.org/W2217098757","https://openalex.org/W2088771128","https://openalex.org/W2263373136","https://openalex.org/W2796085262","https://openalex.org/W190245591","https://openalex.org/W1650778624","https://openalex.org/W2545385022","https://openalex.org/W2022549222","https://openalex.org/W2082944690","https://openalex.org/W2170849377"],"abstract_inverted_index":{"The":[0,228],"current-latched":[1],"sense":[2],"amplifier":[3],"(CLSA)":[4],"is":[5,89,226],"a":[6,14,39,48,191,215,232,250],"promising":[7],"candidate":[8],"for":[9,161],"detecting":[10],"stored":[11],"values":[12],"in":[13,33,38,65,78],"memory":[15,43],"cell.":[16],"With":[17],"technology":[18,67],"shrinks,":[19],"however,":[20],"the":[21,34,42,71,79,81,85,90,105,153,156,162,184,196,239,262],"input":[22,86],"referred":[23],"offset":[24],"voltage":[25,82,140],"(":[26,93,109,124,141,206],"<inline-formula":[27,52,72,94,110,125,142,200,207,217,242,254],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[28,53,73,95,111,126,143,201,208,218,243,255],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[29,54,74,96,112,127,144,202,209,219,244,256],"<tex-math":[30,55,75,97,113,128,145,203,210,220,245,257],"notation=\"LaTeX\">$V_{\\mathrm{OS}})$</tex-math>":[31],"</inline-formula>":[32,57,77,99,115,130,147,205,213,222,247,259],"SA":[35,134],"increases,":[36],"resulting":[37],"degradation":[40],"of":[41,84,104,133,155,195,199,223,253],"read":[44,50],"yield.":[45],"To":[46],"obtain":[47],"high":[49],"yield,":[51],"notation=\"LaTeX\">$V_{\\mathrm{OS}}$</tex-math>":[56,76,204],"reduction":[58,194,252],"and":[59,137,152,168],"cancellation":[60],"techniques":[61,158],"have":[62],"become":[63],"essential":[64],"deep-submicrometer":[66],"nodes.":[68],"When":[69],"determining":[70],"CLSA,":[80],"mismatch":[83],"NMOS":[87,107],"pair":[88,108],"dominant":[91],"factor":[92],"notation=\"LaTeX\">$\\sim$</tex-math>":[98,114],"75%),":[100],"followed":[101],"by":[102],"that":[103,183,238],"latch":[106],"25%).":[116],"In":[117],"this":[118],"paper,":[119],"1)":[120],"slow":[121,216],"rise":[122],"time":[123],"notation=\"LaTeX\">$T_{\\mathrm{RISE}})$</tex-math>":[129],"control":[131],"technique":[132,149],"enable":[135],"signal":[136],"2)":[138],"reference":[139],"notation=\"LaTeX\">$V_{\\mathrm{REF}})$</tex-math>":[146],"biasing":[148,248],"are":[150,159],"proposed,":[151],"effectiveness":[154],"proposed":[157],"analyzed":[160],"conventional":[163,263],"CLSA":[164,170],"with":[165,186,241],"footswitch":[166],"(FS-CLSA)":[167],"offset-canceling":[169],"(OC-CLSA).":[171],"Post-layout":[172],"based":[173],"HSPICE":[174],"simulation":[175],"results":[176,230],"using":[177],"28":[178,233],"nm":[179,234],"model":[180],"parameters":[181],"show":[182,237],"FS-CLSA":[185],"size-up":[187],"strategy":[188],"(OC-CLSA)":[189],"achieves":[190,249],"17.7%":[192],"(10.5%)":[193],"standard":[197],"deviation":[198],"notation=\"LaTeX\">$\\sigma":[211],"_{\\mathrm{OS}})$</tex-math>":[212],"when":[214],"notation=\"LaTeX\">$T_{\\mathrm{RISE}}$</tex-math>":[221],"0.6":[224],"ns":[225],"employed.":[227],"measurement":[229],"from":[231],"test":[235],"chip":[236],"OC-CLSA":[240],"notation=\"LaTeX\">$V_{\\mathrm{REF}}$</tex-math>":[246],"22%":[251],"notation=\"LaTeX\">$\\sigma_{\\mathrm{OS}}$</tex-math>":[258],"compared":[260],"to":[261],"OC-CLSA.":[264]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2023,"cited_by_count":1}],"updated_date":"2026-04-10T15:06:20.359241","created_date":"2025-10-10T00:00:00"}
