{"id":"https://openalex.org/W4312524080","doi":"https://doi.org/10.1109/tcsi.2022.3222383","title":"Cross-Coupled Ferroelectric FET-Based Ternary Content Addressable Memory With Energy-Efficient Match Line Scheme","display_name":"Cross-Coupled Ferroelectric FET-Based Ternary Content Addressable Memory With Energy-Efficient Match Line Scheme","publication_year":2022,"publication_date":"2022-11-17","ids":{"openalex":"https://openalex.org/W4312524080","doi":"https://doi.org/10.1109/tcsi.2022.3222383"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2022.3222383","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2022.3222383","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002578797","display_name":"Sehee Lim","orcid":"https://orcid.org/0000-0003-4772-2695"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sehee Lim","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-4772-2695","affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047969005","display_name":"Dong Han Ko","orcid":"https://orcid.org/0000-0002-9028-4603"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong Han Ko","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-9028-4603","affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108826703","display_name":"Se Keon Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Se Keon Kim","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0001-5927-9390","affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037010076","display_name":"Seong\u2010Ook Jung","orcid":"https://orcid.org/0000-0003-0757-2581"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Ook Jung","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-0757-2581","affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.7386,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.697614,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"70","issue":"2","first_page":"806","last_page":"818"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.996399998664856,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9889000058174133,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5885118246078491},{"id":"https://openalex.org/keywords/content-addressable-memory","display_name":"Content-addressable memory","score":0.5756723284721375},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5746322870254517},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.46115732192993164},{"id":"https://openalex.org/keywords/ternary-operation","display_name":"Ternary operation","score":0.43999314308166504},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.4237288236618042},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.41655606031417847},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4007298946380615},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.35604357719421387},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3519629240036011},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3299826979637146},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14398959279060364},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.09482386708259583},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08186677098274231}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5885118246078491},{"id":"https://openalex.org/C53442348","wikidata":"https://www.wikidata.org/wiki/Q745101","display_name":"Content-addressable memory","level":3,"score":0.5756723284721375},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5746322870254517},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.46115732192993164},{"id":"https://openalex.org/C64452783","wikidata":"https://www.wikidata.org/wiki/Q1524945","display_name":"Ternary operation","level":2,"score":0.43999314308166504},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.4237288236618042},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.41655606031417847},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4007298946380615},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.35604357719421387},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3519629240036011},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3299826979637146},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14398959279060364},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.09482386708259583},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08186677098274231},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2022.3222383","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2022.3222383","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G8833844757","display_name":null,"funder_award_id":"2020M3F3A2A01081918","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"}],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320328359","display_name":"Ministry of Science and ICT, South Korea","ror":"https://ror.org/01wpjm123"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":37,"referenced_works":["https://openalex.org/W1526420812","https://openalex.org/W2006545375","https://openalex.org/W2008987170","https://openalex.org/W2045322931","https://openalex.org/W2057906278","https://openalex.org/W2062143991","https://openalex.org/W2109143217","https://openalex.org/W2125667472","https://openalex.org/W2291078588","https://openalex.org/W2319065407","https://openalex.org/W2323614752","https://openalex.org/W2491717217","https://openalex.org/W2583357209","https://openalex.org/W2613103714","https://openalex.org/W2744312841","https://openalex.org/W2800070060","https://openalex.org/W2885718248","https://openalex.org/W2893163116","https://openalex.org/W2894948827","https://openalex.org/W2899077824","https://openalex.org/W2906313120","https://openalex.org/W2958109435","https://openalex.org/W2963446207","https://openalex.org/W2988640543","https://openalex.org/W3005839508","https://openalex.org/W3009802679","https://openalex.org/W3010984916","https://openalex.org/W3020676632","https://openalex.org/W3039362986","https://openalex.org/W3046348588","https://openalex.org/W3094204829","https://openalex.org/W3095256020","https://openalex.org/W3120112534","https://openalex.org/W3132591204","https://openalex.org/W3138414351","https://openalex.org/W3142458602","https://openalex.org/W3185469596"],"related_works":["https://openalex.org/W2347585086","https://openalex.org/W1527953837","https://openalex.org/W2042100038","https://openalex.org/W2070443794","https://openalex.org/W2764319374","https://openalex.org/W2075460687","https://openalex.org/W3086500945","https://openalex.org/W2781651239","https://openalex.org/W1966596465","https://openalex.org/W2368367884"],"abstract_inverted_index":{"Fast":[0],"communication":[1],"between":[2],"networking":[3,21],"devices":[4,22,44],"increases":[5],"the":[6,9,25,34,56,77,82,90,94,101,127,131,161,167,178,184,189],"importance":[7],"of":[8,114,130,163],"ternary":[10],"content":[11],"addressable":[12],"memory":[13],"(TCAM).":[14],"The":[15],"demands":[16],"for":[17,53],"low":[18,61],"energy":[19,63,152],"in":[20,86,93,166],"have":[23,50],"accelerated":[24],"research":[26],"on":[27],"nonvolatile":[28,42],"TCAMs":[29,59,134],"that":[30,123,183],"store":[31],"data":[32],"without":[33],"power":[35],"supply.":[36],"Recently,":[37],"ferroelectric":[38],"field-effect":[39],"transistors":[40],"(FeFETs),":[41],"three-terminal":[43],"with":[45,64,177],"a":[46,65,119,144],"high":[47],"on/off":[48],"ratio,":[49],"been":[51],"adopted":[52],"TCAMs.":[54],"Although":[55],"previous":[57,132],"FeFET":[58,121,133,180,186],"consume":[60],"write":[62,74,78,102,128],"significantly":[66],"compact":[67],"TCAM":[68,96,122,187],"cell":[69],"area,":[70],"they":[71],"suffer":[72],"from":[73,126],"problems:":[75],"1)":[76],"scheme":[79,148],"cannot":[80],"afford":[81],"saturated":[83],"polarization":[84],"switching":[85],"FeFETs":[87],"and":[88,135,153,160],"2)":[89],"states":[91],"stored":[92],"unselected":[95],"cells":[97],"are":[98],"changed":[99],"during":[100],"operation.":[103],"In":[104],"addition,":[105],"search":[106,151,191],"yield":[107],"is":[108,124],"deteriorated":[109],"by":[110,155],"wide":[111],"process":[112,138],"variations":[113],"FeFETs.":[115],"This":[116,140],"paper":[117,141],"proposes":[118,143],"novel":[120,145],"free":[125],"problems":[129],"tolerant":[136],"to":[137,149],"variations.":[139],"also":[142],"match":[146,157,168],"line":[147,158],"improve":[150],"time":[154],"reducing":[156],"capacitance":[159],"amount":[162],"discharged":[164],"voltage":[165],"evaluation":[169],"phase.":[170],"Industrial-compatible":[171],"28":[172],"nm":[173],"technology-based":[174],"simulation":[175],"results":[176],"Preisach":[179],"model":[181],"show":[182],"proposed":[185],"achieves":[188],"highest":[190],"yield.":[192]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":4}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}