{"id":"https://openalex.org/W3111895964","doi":"https://doi.org/10.1109/tcsi.2020.3042825","title":"A +0.44\u00b0C/\u22120.4\u00b0C Inaccuracy Temperature Sensor With Multi-Threshold MOSFET-Based Sensing Element and CMOS Thyristor-Based VCO","display_name":"A +0.44\u00b0C/\u22120.4\u00b0C Inaccuracy Temperature Sensor With Multi-Threshold MOSFET-Based Sensing Element and CMOS Thyristor-Based VCO","publication_year":2020,"publication_date":"2020-12-11","ids":{"openalex":"https://openalex.org/W3111895964","doi":"https://doi.org/10.1109/tcsi.2020.3042825","mag":"3111895964"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2020.3042825","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2020.3042825","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100336850","display_name":"Jing Li","orcid":"https://orcid.org/0000-0001-9980-0224"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Jing Li","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0001-9980-0224","affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101898858","display_name":"Yuyu Lin","orcid":"https://orcid.org/0000-0001-9007-908X"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuyu Lin","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0001-9007-908X","affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100749757","display_name":"Ning Ning","orcid":"https://orcid.org/0000-0001-7893-1428"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ning Ning","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0001-7893-1428","affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100377679","display_name":"Qi Yu","orcid":"https://orcid.org/0000-0002-0490-0749"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qi Yu","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5100336850"],"corresponding_institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4210124847"],"apc_list":null,"apc_paid":null,"fwci":2.0904,"has_fulltext":false,"cited_by_count":50,"citation_normalized_percentile":{"value":0.86771024,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":97,"max":100},"biblio":{"volume":"68","issue":"3","first_page":"1102","last_page":"1113"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.693786084651947},{"id":"https://openalex.org/keywords/voltage-controlled-oscillator","display_name":"Voltage-controlled oscillator","score":0.6841917037963867},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5840066075325012},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5608012080192566},{"id":"https://openalex.org/keywords/thyristor","display_name":"Thyristor","score":0.5308671593666077},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.43103867769241333},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4295780062675476},{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"Temperature coefficient","score":0.4284190535545349},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.42015784978866577},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40366029739379883},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.39242368936538696},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.36720138788223267},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2477010190486908},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1999446153640747}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.693786084651947},{"id":"https://openalex.org/C5291336","wikidata":"https://www.wikidata.org/wiki/Q852341","display_name":"Voltage-controlled oscillator","level":3,"score":0.6841917037963867},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5840066075325012},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5608012080192566},{"id":"https://openalex.org/C121922863","wikidata":"https://www.wikidata.org/wiki/Q180805","display_name":"Thyristor","level":3,"score":0.5308671593666077},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.43103867769241333},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4295780062675476},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.4284190535545349},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.42015784978866577},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40366029739379883},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.39242368936538696},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.36720138788223267},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2477010190486908},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1999446153640747}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2020.3042825","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2020.3042825","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5199999809265137,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G2300347699","display_name":null,"funder_award_id":"62004024","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":27,"referenced_works":["https://openalex.org/W1483431259","https://openalex.org/W1965838897","https://openalex.org/W1969794630","https://openalex.org/W1984863066","https://openalex.org/W1992137999","https://openalex.org/W2014739970","https://openalex.org/W2022098526","https://openalex.org/W2029776849","https://openalex.org/W2087509188","https://openalex.org/W2107292647","https://openalex.org/W2108150940","https://openalex.org/W2111321598","https://openalex.org/W2124899616","https://openalex.org/W2127016647","https://openalex.org/W2161723991","https://openalex.org/W2276613975","https://openalex.org/W2308930466","https://openalex.org/W2472878757","https://openalex.org/W2518173922","https://openalex.org/W2594304245","https://openalex.org/W2625288951","https://openalex.org/W2802661585","https://openalex.org/W2895608533","https://openalex.org/W2913389806","https://openalex.org/W2921210746","https://openalex.org/W3001440766","https://openalex.org/W3016215204"],"related_works":["https://openalex.org/W2070109416","https://openalex.org/W1523213765","https://openalex.org/W2040399070","https://openalex.org/W2388316590","https://openalex.org/W4388486464","https://openalex.org/W2380576078","https://openalex.org/W2261105975","https://openalex.org/W2902200568","https://openalex.org/W4213279392","https://openalex.org/W3157583314"],"abstract_inverted_index":{"A":[0],"VCO-based(Voltage":[1],"Controlled":[2],"Oscillator)":[3],"temperature":[4,16,19,31,59,113],"sensor":[5,17,145],"with":[6,47,70],"multi-threshold":[7],"MOSFET":[8],"based":[9,91],"sensing":[10],"element":[11],"is":[12,52,78,119,130],"proposed.":[13],"The":[14,74,128,143,161],"proposed":[15,30,144],"converts":[18],"variation":[20,57],"into":[21,25,81],"frequency":[22],"and":[23,46,60,105,137,151],"then":[24,79],"digital":[26],"readings.":[27],"In":[28,115],"the":[29,33,56,84,100,109,112],"sensor,":[32],"ratio":[34,75],"of":[35,58,65,76,83,87,94,102,111,141,149,155,166],"two":[36,88],"reference":[37,126],"currents,":[38],"generated":[39],"by":[40],"P-MOSFETs":[41],"operated":[42],"in":[43,132],"sub-threshold":[44],"region":[45],"different":[48],"channel":[49],"doping":[50],"concentration,":[51],"used":[53],"to":[54,98],"sense":[55],"achieves":[61,138,146],"a":[62,133,147,152],"3\u03c3":[63],"inaccuracy":[64,140],"\u00b10.06\u00b0C":[66],"after":[67],"first-order":[68],"poly-fit":[69],"systematic":[71],"nonlinearity":[72],"removal.":[73],"currents":[77],"transformed":[80],"difference":[82],"output":[85],"frequencies":[86],"identical":[89],"CMOS-thyristor":[90],"VCOs,":[92],"both":[93],"which":[95],"are":[96],"optimized":[97],"alleviate":[99],"impact":[101],"charge":[103,106],"sharing":[104],"injection":[107],"on":[108],"precision":[110],"sensor.":[114],"this":[116],"way,":[117],"there":[118],"no":[120],"need":[121],"for":[122],"generating":[123],"an":[124,139,164],"external":[125],"clock.":[127],"prototype":[129,162],"fabricated":[131],"130nm":[134],"CMOS":[135],"process":[136],"+0.44\u00b0C/-0.4\u00b0C.":[142],"resolution":[148,153],"0.1\u00b0C":[150],"FoM":[154],"0.12nJ\u00b7K":[156],"<sup":[157,168],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[158,169],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[159,170],".":[160,171],"occupies":[163],"area":[165],"0.07mm":[167]},"counts_by_year":[{"year":2025,"cited_by_count":16},{"year":2024,"cited_by_count":10},{"year":2023,"cited_by_count":15},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":5}],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2025-10-10T00:00:00"}